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江苏科技大学 理学院, 江苏 镇江 212100
[ "张琼(1998-),女,云南宣威人,硕士研究生,2021年于江苏科技大学获得学士学位,主要从事半导体发光材料及钙钛矿太阳能电池的研究。 E-mail: 18362885213@163.com" ]
[ "戴俊(1981-),男,江苏扬州人,博士,教授,博士研究生导师,2012年于东南大学获得博士学位,主要从事半导体发光材料及器件的研究。 E-mail: daijun@just.edu.cn" ]
收稿日期:2021-05-25,
修回日期:2021-07-06,
纸质出版日期:2021-09-01
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张琼, 吴悦嘉, 冯艳琴, 等. Cs0.05FA0.79MA0.16PbI2.52Br0.48钙钛矿薄膜的变温光致发光特性[J]. Chinese Journal of Luminescence, 2021,42(9):1396-1402.
Qiong ZHANG, Yue-jia WU, Yan-qin FENG, et al. Temperature-dependent Photoluminescence Properties of Cs0.05FA0.79MA0.16PbI2.52Br0.48 Perovskite Thin Film[J]. 发光学报, 2021, 42(9): 1396-1402.
张琼, 吴悦嘉, 冯艳琴, 等. Cs0.05FA0.79MA0.16PbI2.52Br0.48钙钛矿薄膜的变温光致发光特性[J]. Chinese Journal of Luminescence, 2021,42(9):1396-1402. DOI: 10.37188/CJL.20210195.
Qiong ZHANG, Yue-jia WU, Yan-qin FENG, et al. Temperature-dependent Photoluminescence Properties of Cs0.05FA0.79MA0.16PbI2.52Br0.48 Perovskite Thin Film[J]. 发光学报, 2021, 42(9): 1396-1402. DOI: 10.37188/CJL.20210195.
报道了Cs
0.05
FA
0.79
MA
0.16
PbI
2.52
Br
0.48
钙钛矿薄膜的变温光致发光特性. 采用一步旋涂法,用氯苯作反溶剂制备了Cs
0.05
FA
0.79
MA
0.16
PbI
2.52
Br
0.48
钙钛矿薄膜,并对其表面形貌和结晶质量进行了表征. X射线衍射(XRD)分析结果表明其为四方钙钛矿结构. 钙钛矿薄膜表面均匀致密,晶粒尺寸约为300 nm. 在5~200 K温度范围内测量了光致发光强度,结果表明,光致发光光谱连续蓝移约9.36 nm,没有相变引起的反转红移. 光致发光强度随温度的升高呈双指数降低,由Arrhenius方程拟合得到了两个热激活能. 通过玻色-爱因斯坦双谐振子模型对光学带隙进行了拟合,并对非重整化带隙能量、声学声子能量和光学声子能量也进行了拟合. 通过Segall公式拟合光致发光的半峰宽(FWHM),研究了激子-声子相互作用对光致发光展宽的影响. 在10 K和100 K时,光致发光主要来自激子复合;而在200 K时,辐射复合主要来自自由-束缚对和施主-受主对,这意味着缺陷相关的光致发光是在高温下产生的. 本文详细的光学参数可以为钙钛矿型光电器件的研究提供物理基础.
This paper reports the temperature-dependent photoluminescence properties of Cs
0.05
FA
0.79
MA
0.16
PbI
2.52
-Br
0.48
perovskite thin film. The Cs
0.05
FA
0.79
MA
0.16
PbI
2.52
Br
0.48
perovskite thin film was prepared by one-step spin coating with chlorobenzene anti-solvent treatment
and the surface morphology and crystallization quality were characterized. The X-ray diffraction(XRD) indicates that the Cs
0.05
FA
0.79
MA
0.16
PbI
2.52
Br
0.48
has a typical tetragonal perovskite structure. The perovskite film has a uniform and dense surface
and the grain size is about 300 nm. The photoluminescence intensity was measured in the temperature range of 5-200 K. The photoluminescence spectra show a continuous blue shift of about 9.36 nm
and there is no reversal redshift induced by phase transition. The photoluminescence intensity shows a bi-exponential quenching with the increase of temperature
and two thermal activation energies are obtained by Arrhenius equation. The optical bandgap is fitted by the Bose-Einstein double harmonic oscillator model
and the non-renormalized bandgap energy
the energies of acoustic phonon and optical phonon were fitted. The photoluminescence broadening mechanism was studied by the Segall formula. At 10 K and 100 K
the photoluminescence is mainly from exciton recombination
while at 200 K
the radiation recombination is mainly from free-to-bound and donor-acceptor pairs
which means the defect associated photoluminescence arises at high temperature. The detailed optical parameters in our paper can provide a physical foundation for further optimization of perovskite optoelectronic devices.
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