高性能宽带倍增型四元有机光电探测器

王建彬; 唐孝生; 周笔; 曾夏辉; 余华梁; 周赢武

doi:10.37188/CJL.20210142

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高性能宽带倍增型四元有机光电探测器

器件制备及器件物理 | 更新时间：2021-07-22

- 高性能宽带倍增型四元有机光电探测器
  增强出版
- High Performance Broadband Photomultiplication-type Quaternary Organic Photodetectors
- 发光学报 2021年42卷第7期页码：1057-1064
- 作者机构：
  
  1.闽江学院　物理与电子信息工程学院，福建　福州　 350108
  2.重庆邮电大学　光电工程学院，重庆　 400065
- 作者简介：
  
  [ "王建彬(1983-)，男，福建福州人，博士，讲师，2019年于中国科学院福建物质结构研究所获得博士学位，主要从事有机光电材料与器件的研究。E-mail: wangjianbinnewlife@foxmail.com" ]
- 基金信息：
  
  福建省教育厅项目(JAT200428);福建省自然科学基金(2018J01420)
- DOI：10.37188/CJL.20210142
  中图分类号： TN304
- 收稿日期：2021-04-21，
  
  修回日期：2021-05-10，
  
  纸质出版日期：2021-07-01
- 稿件说明：
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王建彬, 唐孝生, 周笔, 等. 高性能宽带倍增型四元有机光电探测器[J]. 发光学报, 2021,42(7):1057-1064.

Jian-bin WANG, Xiao-sheng TANG, Bi ZHOU, et al. High Performance Broadband Photomultiplication-type Quaternary Organic Photodetectors[J]. Chinese journal of luminescence, 2021, 42(7): 1057-1064.
王建彬, 唐孝生, 周笔, 等. 高性能宽带倍增型四元有机光电探测器[J]. 发光学报, 2021,42(7):1057-1064. DOI： 10.37188/CJL.20210142.

Jian-bin WANG, Xiao-sheng TANG, Bi ZHOU, et al. High Performance Broadband Photomultiplication-type Quaternary Organic Photodetectors[J]. Chinese journal of luminescence, 2021, 42(7): 1057-1064. DOI： 10.37188/CJL.20210142.

摘要

采用溶液法制备了结构为ITO/PEDOT∶PSS/活性层/Al的四元倍增型有机光电探测器，器件本体异质结活性层由P3HT∶PTB7-Th∶IEICO∶PC

BM以90∶10∶0.5∶0.5的质量比共混组成。随着偏压增加，器件外量子效率(External quantum eﬃciency

EQE)远超100%，并展现300~850 nm的宽光谱响应。在330 nm与780 nm处，器件可获得的最高EQEs和响应度分别为773000%和2 057 A·W

-1

以及311000%和1 956 A·W

-1

，为有机光电探测器在紫外和近红外光区可获得的最高EQE和响应度之一。-25 V偏压下，与结构为ITO/PEDOT∶PSS/P3HT∶PTB7-Th∶IEICO(90∶10∶1)/Al的三元器件相比，四元器件的平均EQE(388167%)、响应度(1 604 A·W

-1

)以及探测灵敏度(3.6×10

Jones)分别提高了0.5倍、0.5倍和0.4倍，有效提升了器件对弱光的探测能力。上述结果提供了一种制备多元宽带倍增型有机光电探测器的有效策略，用以提高器件弱光探测能力，特别是提升了器件对紫外和近红外光的响应与探测能力。

Abstract

Quaternary photomultiplication(PM)-type organic photodetectors(OPDs) with a structure of ITO/PEDOT∶PSS/active layer/Al were fabricated by a solution-processing method. The bulk-heterojunction active layer of devices was composed of P3HT∶PTB7-Th∶IEICO∶PC

BM with a weight ratio of 90∶10∶0.5∶0.5. As the bias voltage increases

the external quantum efficiencies(EQEs) of the devices are much larger than 100% and exhibit a wide spectral response range of 300-850 nm. At 330 nm and 780 nm

the highest EQE and responsivity of the devices are 773000% and 2 057 A·W

-1

and 311000% and 1 956 A·W

-1

respectively

which are one of the highest EQEs and responsivity values in ultraviolet and near-infrared areas for the OPDs. Under -25 V bias

compared to the ternary devices with a structure of ITO/PEDOT∶PSS/P3HT∶PTB7-Th∶IEICO(90∶10∶1)/Al

the average EQE(388167%)

responsivity(1 604 A·W

-1

) and detectivity(3.6×10

Jones) of quaternary devices are more than 0.5

0.5

0.4 times larger

respectively

effectively improving the detecting capacity of devices on weak light. The above results provide an effective strategy for preparing multi-element broadband PM-type OPDs to improve the detecting ability of the devices on weak light

especially improving the response and detecting ability of the devices in ultraviolet and near-infrared regions.

关键词

Keywords

references

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