俄歇复合、电子泄漏和空穴注入对深紫外发光二极管效率衰退的影响

王玮东; 楚春双; 张丹扬; 毕文刚; 张勇辉; 张紫辉

doi:10.37188/CJL.20210102

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俄歇复合、电子泄漏和空穴注入对深紫外发光二极管效率衰退的影响

封面文章 | 更新时间：2021-07-22

- 俄歇复合、电子泄漏和空穴注入对深紫外发光二极管效率衰退的影响
  增强出版
- Impact of Auger Recombination, Electron Leakage and Hole Injection on Efficiency Droop for DUV LEDs
- Chinese Journal of Luminescence 2021年42卷第7期页码：897-903
- 作者机构：
  
  1.河北工业大学电子信息工程学院　天津市电子材料与器件重点实验室，天津　300401
  2.河北工业大学　省部共建电工装备可靠性与智能化国家重点实验室，天津　300401
- 作者简介：
  
  王玮东(1995-)，男，山西朔州人，硕士研究生，2018年于沈阳工业大学获得学士学位，主要从事基于第三代半导体材料的发光二极管的设计与制备。E-mail: wangweidong2019@hotmail.com
  楚春双(1993-)，女，河北邢台人，博士，2021年于河北工业大学获得博士学位，主要从事第三代半导体器件的设计与制备(包括电力电子器件、光电探测器和深紫外发光器件)。E-mail: chuchunshuang@hotmail.com
  张勇辉(1983-)，男，江西抚州人，博士，副教授，博士研究生导师，2015年于中国科学院半导体研究所获得博士学位，主要从事基于纳米制造技术的氮化镓微纳结构LED的相关研究。E-mail: zhangyh@hebut.edu.cn
- 基金信息：
  
  National Natural Science Foundation of China(62074050;61975051);State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology(EERI_PI2020008);The joint research project for Tungsu Group and Hebei University of Technology(HI1909)
- DOI：10.37188/CJL.20210102
  中图分类号： TN312.8
- 收稿：2021-03-20，
  
  修回：2021-04-01，
  
  纸质出版：2021-07-01
- 稿件说明：
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王玮东, 楚春双, 张丹扬, 等. 俄歇复合、电子泄漏和空穴注入对深紫外发光二极管效率衰退的影响[J]. Chinese Journal of Luminescence, 2021,42(7):897-903.

Wei-dong WANG, Chun-shuang CHU, Dan-yang ZHANG, et al. Impact of Auger Recombination, Electron Leakage and Hole Injection on Efficiency Droop for DUV LEDs[J]. 发光学报, 2021, 42(7): 897-903.
王玮东, 楚春双, 张丹扬, 等. 俄歇复合、电子泄漏和空穴注入对深紫外发光二极管效率衰退的影响[J]. Chinese Journal of Luminescence, 2021,42(7):897-903. DOI： 10.37188/CJL.20210102.

Wei-dong WANG, Chun-shuang CHU, Dan-yang ZHANG, et al. Impact of Auger Recombination, Electron Leakage and Hole Injection on Efficiency Droop for DUV LEDs[J]. 发光学报, 2021, 42(7): 897-903. DOI： 10.37188/CJL.20210102.

摘要

研究了俄歇复合、电子泄漏和空穴注入对深紫外发光二极管(DUV LED)效率衰退的影响. 结果表明，当俄歇复合系数从10

-32

·s

-1

增大到10

-30

·s

-1

时，俄歇复合对效率衰退的影响很小. 当俄歇复合系数增大到10

-29

·s

-1

时，俄歇复合对效率衰退有显著的影响. 然而，对于AlGaN材料而言，俄歇复合系数很难达到10

-29

·s

-1

. 此外，本研究还发现，即使设置的俄歇复合系数等于10

-32

·s

-1

DUV LED的效率衰退依旧随着电子泄漏的增加而增大. 因此，这进一步证明了电子泄漏是导致DUV LED效率衰退的主要因素. 此外，本工作还证明了空穴注入效率的提高可以有效地抑制DUV LED的效率衰退问题，这主要是由于更多的电子与空穴在量子阱中复合产生了光子，降低了电子从有源区中泄漏的几率.

Abstract

We reveal the impact of the Auger recombination

electron leakage and hole injection on the efficiency droop for deep-ultraviolet light-emitting diodes(DUV

LEDs). According to our results

the minor change of the efficiency droop is caused by the Auger recombination when the Auger recombination coefficients range from 10

-32

·s

-1

to 10

-30

·s

-1

. The Auger recombination induces notable role on the efficiency droop by defining the Auger recombination coefficient of 10

-29

·s

-1

. However

the large Auger recombination coefficient is not realistic for AlGaN materials. Besides

we find that the efficiency droop becomes significant with the increased electron leakage

even when the adopted Auger recombination coefficient is as small as 10

-32

·s

-1

. Thus

we can prove electron leakage is a major factor causing the severe efficiency droop for DUV LEDs. We then prove that increasing hole injection can suppress efficiency droop because more electrons can recombine with holes instead of escaping from multiple quantum wells(MQWs).

关键词

Keywords

references

REN Z J , YU H B , LIU Z L , et al . Band engineering of Ⅲ-nitride-based deep-ultraviolet light-emitting diodes: a review [J ] . J. Phys. D: Appl. Phys. , 2020 , 53 ( 7 ): 073002 .

KNEISSL M , SEONG T Y , HAN J , et al . The emergence and prospects of deep-ultraviolet light-emitting diode technologies [J ] . Nat. Photonics , 2019 , 13 ( 4 ): 233 - 244 .

CHO J , SCHUBERT E F , KIM J K . Efficiency droop in light-emitting diodes:challenges and countermeasures [J ] . Laser Photonics Rev. , 2013 , 7 ( 3 ): 408 - 421 .

LING S C , LU T C , CHANG S P , et al . Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes [J ] . Appl. Phys. Lett. , 2010 , 96 ( 23 ): 231101-1-3 .

SHIN D S , HAN D P , OH J Y , et al . Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence [J ] . Appl. Phys. Lett. , 2012 , 100 ( 15 ): 153506-1-4 .

PARK J H , CHO J , SCHUBERT E F , et al . The effect of imbalanced carrier transport on the efficiency droop in GaInN-based blue and green light-emitting diodes [J ] . Energies , 2017 , 10 ( 9 ): 1277 .

KIM M H , SCHUBERT M F , DAI Q , et al . Origin of efficiency droop in GaN-based light-emitting diodes [J ] . Appl. Phys. Lett. , 2007 , 91 ( 18 ): 183507-1-3 .

KIOUPAKIS E , YAN Q M , VAN DE WALLE C G . Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes [J ] . Appl. Phys. Lett. , 2012 , 101 ( 23 ): 231107-1-4 .

ZHANG Z H , CHEN S W H , CHU C S , et al . Nearly efficiency-droop-free AlGaN-based ultraviolet light-emitting diodes with a specifically designed superlattice p-type electron blocking layer for high Mg doping efficiency [J ] . Nanoscale Res. Lett. , 2018 , 13 ( 1 ): 122-1-7 .

PIPREK J . Efficiency droop in nitride-based light-emitting diodes [J ] . Phys. Status Solidi (a) , 2010 , 207 ( 10 ): 2217 - 2225 .

NIPPERT F , MAZRAEHNO M T , DAVIES M J , et al . Auger recombination in AlGaN quantum wells for UV light-emitting diodes [J ] . Appl. Phys. Lett. , 2018 , 113 ( 7 ): 071107-1-5 .

YUN J , SHIM J I , HIRAYAMA H . Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation [J ] . Appl. Phys. Express , 2015 , 8 ( 2 ): 022104 .

ZHANG Z H , TIAN K K , CHU C S , et al . Establishment of the relationship between the electron energy and the electron injection for AlGaN based ultraviolet light-emitting diodes [J ] . Opt. Express , 2018 , 26 ( 14 ): 17977 - 17987 .

PIPREK J , LI Z M S . Origin of InGaN light-emitting diode efficiency improvements using chirped AlGaN multi-quantum barriers [J ] . Appl. Phys. Lett. , 2013 , 102 ( 2 ): 023510-1-4 .

CHUNG R B , HAN C , PAN C C , et al . The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes [J ] . Appl. Phys. Lett. , 2012 , 101 ( 13 ): 131113 .

SUN P , BAO X L , LIU S Q , et al . Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer [J ] . Superlattic. Microst. , 2015 , 85 : 59 - 66 .

LI Y , CHEN S C , TIAN W , et al . Advantages of AlGaN-based 310-nm UV light-emitting diodes with Al content graded AlGaN electron blocking layers [J ] . IEEE Photon. J. , 2013 , 5 ( 4 ): 8200309-1-1 .

LI L , MIYACHI Y , MIYOSHI M , et al . Ultrathin inserted AlGaN/InAlN heterojunction for performance improvement in AlGaN-based deep ultraviolet light-emitting diodes [J ] . Appl. Phys. Express , 2019 , 12 ( 1 ): 011010 .

CHU C S , TIAN K K , CHE J M , et al . On the impact of electron leakage on the efficiency droop for AlGaN based deep ultraviolet light emitting diodes [J ] . IEEE Photon. J. , 2020 , 12 ( 3 ): 1600207 .

VAXENBURG R , LIFSHITZ E , EFROS A L . Suppression of Auger-stimulated efficiency droop in nitride-based light emitting diodes [J ] . Appl. Phys. Lett. , 2013 , 102 ( 3 ): 031120-1-5 .

CHANG J Y , CHANG H T , SHIH Y H , et al . Efficient carrier confinement in deep-ultraviolet light-emitting diodes with composition-graded configuration [J ] . IEEE Trans. Electron Dev. , 2017 , 64 ( 12 ): 4980 - 4984 .

FIORENTINI V , BERNARDINI F , AMBACHER O . Evidence for nonlinear macroscopic polarization in Ⅲ-Ⅴ nitride alloy heterostructures [J ] . Appl. Phys. Lett. , 2002 , 80 ( 7 ): 1204 - 1206 .

KIOUPAKIS E , RINKE P , DELANEY K T , et al . Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes [J ] . Appl. Phys. Lett. , 2011 , 98 ( 16 ): 161107-1-3 .

LIU Z Q , WEI T B , GUO E Q , et al . Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate [J ] . Appl. Phys. Lett. , 2011 , 99 ( 9 ): 091104-1-3 .

KUO Y K , CHANG J Y , CHEN F M , et al . Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes [J ] . IEEE J. Quantum Electron. , 2016 , 52 ( 4 ): 3300105 .

FANG M Q , TIAN K K , CHU C S , et al . Manipulation of Si doping concentration for modification of the electric field and carrier injection for AlGaN-based deep-ultraviolet light-emitting diodes [J ] . Crystals , 2018 , 8 ( 6 ): 258-1-8 .

RYU H Y , CHOI I G , CHOI H S , et al . Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes [J ] . Appl. Phys. Express , 2013 , 6 ( 6 ): 062101 .

VURGAFTMAN I , MEYER J R . Band parameters for nitrogen-containing semiconductors [J ] . J. Appl. Phys. , 2003 , 94 ( 6 ): 3675 - 3696 .

CHU C S , TIAN K K , FANG M Q , et al . On the AlxGa1-xN/AlyGa1-yN/AlxGa1-xN(x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes [J ] . Superlattic. Microst. , 2018 , 113 : 472 - 477 .

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