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1.中国科学院半导体研究所 光电子器件国家工程中心,北京 100083
2.中国科学院大学 材料科学与光电技术学院,北京 100049
[ "班雪峰(1993-),男,辽宁丹东人,博士研究生,2016年于吉林大学获得学士学位,主要从事大功率半导体激光器的研究。E-mail: banxuefeng@semi.ac.cn" ]
[ "王翠鸾(1980-),女,河北石家庄人,博士,副研究员,2009年于中国科学院半导体研究所获得博士学位,主要从事大功率半导体激光器、激光二极管阵列光束整形的研究。E-mail: clwang@semi.ac.cn" ]
收稿日期:2020-12-23,
修回日期:2021-01-15,
纸质出版日期:2021-04-01
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班雪峰, 王翠鸾, 刘素平, 等. 808 nm大功率分布反馈激光器列阵研制[J]. 发光学报, 2021,42(4):504-509.
Xue-feng BAN, Cui-luan WANG, Su-ping LIU, et al. Development of 808 nm High-power Distributed Feedback Laser Array[J]. Chinese journal of luminescence, 2021, 42(4): 504-509.
班雪峰, 王翠鸾, 刘素平, 等. 808 nm大功率分布反馈激光器列阵研制[J]. 发光学报, 2021,42(4):504-509. DOI: 10.37188/CJL.20200396.
Xue-feng BAN, Cui-luan WANG, Su-ping LIU, et al. Development of 808 nm High-power Distributed Feedback Laser Array[J]. Chinese journal of luminescence, 2021, 42(4): 504-509. DOI: 10.37188/CJL.20200396.
为提高大功率半导体激光器的泵浦效率,必须降低半导体激光器输出波长随温度的漂移系数。采用MOCVD外延技术、纳米压印和干法刻蚀附加湿法腐蚀等工艺制备了大功率分布反馈激光器列阵。激光器列阵的腔长为1 mm
25 ℃时中心波长为808 nm,通过测试不同热沉温度下的
P-V-I
曲线和光谱图,表明当脉冲工作电流为148 A时,激光器列阵的输出功率可以达到100 W,斜率效率为0.9 W/A,光谱的FWHM为0.5 nm,边模抑制比可以达到40 dB,出射波长随温度的漂移系数为0.056 nm/℃,单列阵波长锁定范围可达50 ℃,总锁定范围100 ℃。另外还分析了腔面镀膜对波长锁定效果的影响。
In order to improve the pumping efficiency of high-power semiconductor lasers
the drift coefficient of the output wavelength of the semiconductor laser with temperature must be reduced. The high-power distributed feedback laser array is fabricated using MOCVD epitaxial technology
nano-imprinting
dry etching and wet etching. The cavity length of this laser array is 1 mm
and the wavelength is 808 nm at 25 ℃. By testing the
P-V-I
curve and spectrogram at different heat sink temperatures
it is shown that when the pulse working current is 148 A
the output power of the laser array can reach 100 W. The slope efficiency is 0.9 W/A. The FWHM of the spectrum is 0.5 nm. The side mode suppression ratio can reach 40 dB. The thermal drift coefficient of the emission wavelength is 0.056 nm/℃. Single-array wavelength lock ranges up to 50 ℃ and total lock ranges 100 ℃. In addition
the influence of the cavity surface coating on the wavelength locking effect is also analyzed.
CHEN Y , KUSHAWAHA V . Rotating-disk diode-pumped continuous-wave Nd:YAG laser [J]. Appl. Phys. B , 1995 , 61 ( 5 ): 525 - 528 .
LIU J H , WANG C Q , LÜ J H , et al . Diode-laser-array single-end-pumped 5 W Nd:YVO4/KTP continuous-wave solid-state green laser [J]. Chin. Phys. Lett. , 1999 , 16 ( 7 ): 508 - 509 .
PASCHOTTA R , NILSSON J , TROPPER A C , et al . Ytterbium-doped fiber amplifiers [J]. IEEE J. Quantum Electron. , 1997 , 33 ( 7 ): 1049 - 1056 .
李江 , 杨志勇 , 吴玉松 , 等 . Nd3+离子掺杂YAG激光透明陶瓷的光谱性质及Judd-Ofelt理论分析 [J]. 无机材料学报 , 2008 , 23 ( 3 ): 429 - 433 .
LI J , YANG Z Y , WU Y S , et al . Spectroscopic properties and judd-ofelt theory analysis of Nd:YAG transparent laser ceramic [J]. J. Inorg. Mater. , 2008 , 23 ( 3 ): 429 - 433 . (in Chinese)
VENTRUDO B F , ROGERS G A , LICK G S , et al . Wavelength and intensity stabilisation of 980 nm diode lasers coupled to fibre Bragg gratings [J]. Electron. Lett. , 1994 , 30 ( 25 ): 2147 - 2149 .
VOLODIN B L , DOLGY S V , MELNIK E D , et al . Wavelength stabilization and spectrum narrowing of high-power multimode laser diodes and arrays by use of volume Bragg gratings [J]. Opt. Lett. , 2004 , 29 ( 16 ): 1891 - 1893 .
江鹏飞 , 周燕 , 谢福增 . 闪耀光栅外腔反馈压窄半导体激光器线宽技术的研究 [J]. 光学技术 , 2006 , 32 ( 6 ): 869 - 870 .
JIANG P F , ZHOU Y , XIE F Z . Study of blaze grating feedback external-cavity semiconductor laser with narow-linewidth [J]. Opt. Tech. , 2006 , 32 ( 6 ): 869 - 870 . (in Chinese)
CRUMP P , BROX O , BUGGE F , et al . High-power, high-efficiency monolithic edge-emitting GaAs-based lasers with narrow spectral widths [J]. Semicond. Semimet. , 2012 , 86 : 49 - 91 .
EARLES T , MAWST, L J , BOTEZ D . 1.1 W continuous-wave, narrow spectral width (<1 Å) emission from broad-stripe, distributed-feedback diode lasers(λ=0.893 μm) [J]. Appl. Phys. Lett. , 1998 , 73 ( 15 ): 2072 - 2074 .
KLEHR A , BUGGE F , ERBERT G , et al . High-power broad-area 808 nm DFB lasers for pumping solid state lasers [C]. Proceedings Volume 6133, Novel In-plane Semiconductor Lasers V, San Jose , California, United States , 2006 .
HE Y , AN H , CAI J , et al . 808 nm broad area DFB laser for solid-state laser pumping application [J]. Electron. Lett. , 2009 , 45 ( 3 ): 163 - 164 .
班雪峰 , 赵懿昊 , 王翠鸾 , 等 . 808 nm半导体分布反馈激光器的光栅设计与制作 [J]. 红外与激光工程 , 2019 , 48 ( 11 ): 1105003-1-10 .
BAN X F , ZHAO Y H , WANG C L , et al . Design and preparation of grating for 808 nm semiconductor distributed feedback laser [J]. Infrared Laser Eng. , 2019 , 48 ( 11 ): 1105003-1-10 . (in Chinese)
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