浏览全部资源
扫码关注微信
1.内蒙古师范大学 物理与电子学院,内蒙古 呼和浩特 010022
2.内蒙古自治区功能材料物理与化学重点实验室,内蒙古 呼和浩特 010022
[ "马一智(1992-),男,黑龙江哈尔滨人,硕士研究生,2018年于哈尔滨理工大学获得学士学位,主要从事缺陷发光材料的研究。E-mail: 1710766006@qq.com" ]
[ "朝克夫(1979-),男(蒙古族),内蒙古呼和浩特人,博士,副教授,硕士研究生导师,2007年于中国科学院长春光学精密机械与物理研究所获得博士学位,主要从事稀土掺杂微纳米发光材料的研究。 E-mail: phyerick@imnu.edu.cn" ]
纸质出版日期:2021-04-01,
收稿日期:2020-11-30,
修回日期:2020-12-23,
扫 描 看 全 文
马一智, 李响, 胡大海, 等. Sr3(BN2)2荧光粉的合成与发光性能[J]. 发光学报, 2021,42(4):470-477.
Yi-zhi MA, Xiang LI, Da-hai HU, et al. Synthesis and Luminescence Properties of Sr3(BN2)2 Phosphor[J]. Chinese Journal of Luminescence, 2021,42(4):470-477.
马一智, 李响, 胡大海, 等. Sr3(BN2)2荧光粉的合成与发光性能[J]. 发光学报, 2021,42(4):470-477. DOI: 10.37188/CJL.20200361.
Yi-zhi MA, Xiang LI, Da-hai HU, et al. Synthesis and Luminescence Properties of Sr3(BN2)2 Phosphor[J]. Chinese Journal of Luminescence, 2021,42(4):470-477. DOI: 10.37188/CJL.20200361.
采用高温固相一步法合成了新型荧光粉Sr
3
(BN
2
)
2
(以下简写为SBN)。采用 X 射线衍射、扫描电子显微镜、荧光分光光度计对荧光粉的相组成、形貌和发光性能进行表征。讨论了SBN荧光粉的缺陷发光机理和长余辉特性。结果表明,所制备的样品SBN晶体为立方晶系
Im
-3
m
。在紫外区域有较宽的激发带,发射光谱峰值位于525 nm,半峰宽为3 334 cm
-1
。SBN荧光粉材料存在本征缺陷,在基质中形成了Sr的空位,在光激励下形成发光中心。进一步的余辉衰减曲线与热释光曲线也证实,该材料存在固有缺陷,其余辉时间约10 s。变温光谱显示,当温度达到150 ℃时,荧光强度是室温初始强度的43%,优于稀土掺杂硼氮化物衰减到10%的结果。SBN荧光粉具有合成工艺简单、结构稳定、紫外波段激发获得长余辉绿光发射等优异性能,在LED发光器和指示方面具有潜在的应用前景。
A new type of phosphor Sr
3
(BN
2
)
2
(hereinafter abbreviated as SBN) was synthesized by high temperature solid phase one-step method. The phase composition
morphology and luminescent properties of the phosphor were characterized by X-ray diffraction
scanning electron microscopy and fluorescence spectrophotometer. The defect luminescence mechanism and long afterglow characteristics of SBN phosphors were discussed. The results show that the prepared sample SBN crystals is cubic crystal system
Im-
3
m
. The results show that there is a wide excitation band in the ultraviolet region
and the emission spectrum peak is at 525 nm
and the half peak width is 3 334 cm
-1
. The SBN phosphor material has inherent defects. Sr vacancies are formed in the matrix
and the luminous center is formed under light excitation. Further decay curve and thermoluminescence curve also confirm that the material has inherent defects
and the afterglow time is about 10 s. The variable temperature spectrum shows that when the temperature reaches 150 ℃
the fluorescence intensity is 43% of the initial intensity at room temperature
which is better than the 10% attenuation result of rare earth doped boron nitride. The SBN phosphor has a simple synthesis process
a stable structure
and excellent performance such as long afterglow green light emission obtained by ultraviolet wavelength excitation
and has potential application prospects in white light LED lighting and indication.
Sr3(BN2)2缺陷发光材料长余辉发光机理
Sr3(BN2)2defective luminescent materiallong afterglowluminescence mechanism
SUEHIRO T, HIROSAKI N, XIE R J. Synthesis and photoluminescent properties of (La, Ca)3Si6N11:Ce3+ fine powder phosphors for solid-state lighting [J].ACS Appl. Mater. Interfaces, 2011, 3(3):811-816.
KIM S K, LEE J W, EE H S, et al. High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters [J].Opt. Express, 2010, 18(11):11025-11032.
LIU T C, CHENG B M, HU S F, et al. Highly stable red oxynitride β-SiAlON:Pr3+ phosphor for light-emitting diodes [J].Chem. Mater., 2011, 23(16):3698-3705.
MAO Z Y, WANG D J. Color tuning of direct white light of lanthanum aluminate with mixed-valence europium [J].Inorg. Chem., 2010, 49(11):4922-4927.
王超,王荣彬,章皓,等. 缺陷态对LED用荧光材料热稳定性的影响 [J].发光学报,2020,41(12):1554-1566.
WANG C, WANG R B, ZHANG H, et al. Effect of defect structure on thermal stability of fluorescent materials for LED applications [J].Chin. J. Lumin., 2020, 41(12):1554-1566. (in Chinese)
武文杰,阿木古楞,刘文全,等. 氮(氧)化物荧光粉的合成与发光性能 [J].液晶与显示,2017,32(9):663-676.
WU W J, AMUGULEN , LIU W Q, et al. Synthesis and luminescence of nitride and oxynitride luminescent materials [J].Chin. J. Liq. Cryst. Disp., 2017, 32(9):663-676. (in Chinese)
胡盼,丁慧,刘永福,等. YAG:Ce3+在激光照明应用中的研究进展 [J].发光学报,2020,41(12):1504-1528.
HU P, DING H, LIU Y F, et al. Recent progress of YAG:Ce3+ for white laser diode lighting application [J].Chin. J. Lumin., 2020, 41(12):1504-1528. (in Chinese)
印琰,唐永波,张宝平,等. BaMgAl10O17:Eu2+发射光谱的谱峰形状 [J].发光学报,2009,30(2):131-134.
YIN Y, TANG Y B, ZHANG B P, et al. The lineshape of emission spectra on BaMgAl10O17:Eu2+ phosphor [J].Chin. J. Lumin., 2009, 30(2):131-134. (in Chinese)
PETIT R R, MICHELS S E, FENG A, et al. Adding memory to pressure-sensitive phosphors [J].Light:Sci. Appl., 2019, 8(1):124-1-10.
WANG L, XIE R J, LI Y Q, et al. Ca1-xLixAl1-xSi1+xN3:Eu2+ solid solutions as broadband, color-tunable and thermally robust red phosphors for superior color rendition white light-emitting diodes [J].Light:Sci. Appl., 2016, 5:e16155-1-9.
JIA Z W, YUAN C X, LIU Y F, et al. Strategies to approach high performance in Cr3+-doped phosphors for high-power NIR-LED light sources [J].Light:Sci. Appl., 2020, 9(1):86-1-9.
徐春祥,黄磊,陆祖宏. 纳米ZnS中的自激活发光 [J].发光学报,1999,20(3):239-242.
XU C X, HUANG L, LU Z H. Self-activated luminescence of ZnS nanoparticles [J].Chin. J. Lumin., 1999, 20(3):239-242. (in Chinese)
OGI T, KAIHATSU Y, ISKANDAR F, et al. Facile synthesis of new full-color-emitting BCNO phosphors with high quantum efficiency [J].Adv. Mater., 2008, 20(17):3235-3238.
HAYAKAWA T, HIRAMITSU A, NOGAMI M. White light emission from radical carbonyl-terminations in Al2O3-SiO2 porous glasses with high luminescence quantum efficiencies [J].Appl. Phys. Lett., 2003, 82(18):2975-2977.
BLANCO E, DE LA ROSA-FOX N, ESQUIVIAS L, et al. Processing of silica xerogels using sonocatalysis and an additive [J].J. Non-Cryst. Solids, 1992, 147-148:296-302.
ZHANG W J, WU X L, FAN J Y, et al. Luminescent amorphous alumina nanoparticles in toluene solution [J].J. Phys.:Condens. Matter, 2006, 18(43):9937-9942.
KAR A, KUNDU S, PATRA A. Surface defect-related luminescence properties of SnO2 nanorods and nanoparticles [J].J. Phys. Chem. C, 2011, 115(1):118-124.
LIU B, CHENG C W, CHEN R, et al. Fine structure of ultraviolet photoluminescence of tin oxide nanowires [J].J. Phys. Chem. C, 2010, 114(8):3407-3410.
ZHOU H J, CAI W P, ZHANG L D. Photoluminescence of indium-oxide nanoparticles dispersed within pores of mesoporous silica [J].Appl. Phys. Lett., 1999, 75(4):495-497.
NAKAMURA S, MUKAI T, SENOH M. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes [J].Appl. Phys. Lett., 1994, 64(13):1687-1689.
SCHÖLCH J, DIERKES T, ENSELING D, et al. Synthesis and photoluminescence properties of the red-emitting phosphor Mg3(BN2)N doped with Eu2+ [J].Z. Anorg. Allg. Chem., 2015, 641(5):803-808.
DUTCZAK D, WURST K M, STRÖBELE M, et al. Defect-related luminescence in nitridoborate nitride, Mg3Ga(BN2)N2 [J].Eur. J. Inorg. Chem., 2016, 2016(6):861-866.
CAO G, RABENBERG L K, NUNN C M, et al. Formation of quantum-size semiconductor particles in a layered metal phosphonate host lattice [J].Chem. Mater., 1991, 3(1):149-156.
LI J Y, DING J Y, MA B, et al. Design and research of a self-activated orange magnesium boron nitride phosphor with its application in W-LEDs [J].Dalton. Trans., 2018, 47(43):15439-15447.
LONG Q, WANG C, DING J Y, et al. Synthesis and luminescence properties of a novel red-emitting LiSr4(BN2)3:Eu2+ phosphor [J].Dalton. Trans., 2015, 44(32):14507-14513.
DING J Y, WU Q S, LI Y Y, et al. α-M3B2N4 (M=Ca, Sr):Eu3+:a nitride-based red phosphor with a sharp emission line and broad excitation band used for WLED [J].J. Phys. Chem. C, 2017, 121(18):10102-10111.
DING J Y, WU Q S, LI Y Y, et al. Self-activated yellow light emitting phosphors of α, β-Ca3B2N4 with long afterglow properties [J].Inorg. Chem., 2016, 55(21):10990-10998.
BHUSHAN S, CHUKICHEV M V. Temperature dependent studies of cathodoluminescence of green band of ZnO crystals [J].J. Mater. Sci. Lett., 1988, 7(4):319-321.
0
浏览量
107
下载量
1
CSCD
关联资源
相关文章
相关作者
相关机构