基于离子注入制备的InGaN横向Micro-LED阵列

谭毅; 庄永漳; 卢子元; 张晓东; 赵德胜; 蔡勇; 曾中明; 张宝顺

doi:10.37188/CJL.20200355

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基于离子注入制备的InGaN横向Micro-LED阵列

器件制备及器件物理 | 更新时间：2021-02-08

- 基于离子注入制备的InGaN横向Micro-LED阵列
- InGaN-based Lateral-structured Micro-LED Array Fabricated by Ion Implantation
- 发光学报 2021年42卷第2期页码：215-222
- 作者机构：
  
  1.中国科学技术大学纳米技术与纳米仿生学院, 安徽合肥 230026
  2.中国科学院苏州纳米技术与纳米仿生研究所多功能材料与轻巧系统重点实验室, 江苏苏州 215123
- 作者简介：
  
  [ "谭毅(1996－), 男, 湖北利川人, 硕士研究生, 2018年于湖北大学获得学士学位, 主要从事氮化镓基微型发光二极管的研究。E-mail:ytan2019@sinano.ac.cn" ]
  [ "张宝顺(1969－), 男, 吉林双辽人, 博士, 研究员, 2003年于中国科学院半导体研究所获得博士学位, 主要从事半导体材料生长和器件工艺的研究。E-mail:bszhang2006@sinano.ac.cn" ]
- 基金信息：
  
  国家自然科学基金(U1830112);江苏省自然科学基金(BK20191195);微波毫米波单片集成和模块电路重点实验室开放项目(6142803180407)
- DOI：10.37188/CJL.20200355
  中图分类号： TN312.8
- 纸质出版日期：2021-2，
  
  收稿日期：2020-11-23，
  
  录用日期：2020-12-14
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谭毅, 庄永漳, 卢子元, 等. 基于离子注入制备的InGaN横向Micro-LED阵列[J]. 发光学报, 2021,42(2):215-222.

Yi TAN, Wing-cheung CHONG, Zi-yuan LU, et al. InGaN-based Lateral-structured Micro-LED Array Fabricated by Ion Implantation[J]. Chinese Journal of Luminescence, 2021,42(2):215-222.
谭毅, 庄永漳, 卢子元, 等. 基于离子注入制备的InGaN横向Micro-LED阵列[J]. 发光学报, 2021,42(2):215-222. DOI： 10.37188/CJL.20200355.

Yi TAN, Wing-cheung CHONG, Zi-yuan LU, et al. InGaN-based Lateral-structured Micro-LED Array Fabricated by Ion Implantation[J]. Chinese Journal of Luminescence, 2021,42(2):215-222. DOI： 10.37188/CJL.20200355.

摘要

采用离子注入工艺在InGaN/GaN量子阱蓝光LED结构的p-GaN层形成高阻态隔离区域，实现了最小4 μm超小尺寸高光效Micro-LED阵列的制备，并系统研究了氟离子注入隔离工艺制备的横向结构Micro-LED阵列的电学和光学性能。实验结果表明，在采用的离子注入能量范围内，氟离子在p-GaN层中的注入深度越深，对应器件的电学和光学隔离效果越好。当离子注入能量为60 keV时，Micro-LED阵列具有相对最佳的光电效果，同时基于该离子注入能量制备的4 μm超小尺寸Micro-LED阵列的光功率密度高达200 W/cm

，展现了离子注入工艺在新一代Micro-LED微显示芯片中的应用潜力。

Abstract

In this paper

an ion implantation process is used to form a high-resistance isolation region on the p-GaN layer of the InGaN/GaN quantum well blue LED structure. This method has been used to realize the preparation of ultra-small size and high luminous efficiency Micro-LED arrays with a minimum size of 4 μm. The electrical and optical properties of lateral structure Micro-LED arrays prepared by fluoride ion implantation isolation process are systematically studied. Experimental results show that higher fluoride ion implantation energy can improve opticlal and electrical isolation between Miro-LEDs. When the ion implantation energy is 60 keV

the Micro-LED array has the relatively best photoelectric effect. And the 4 μm ultra-small size Micro-LED array prepared based on this ion implantation energy has an optical power density of up to 200 W/cm

demonstrating the application potential of ion implantation technology in a new generation of Micro-LED based micro-display chips.

关键词

蓝光Micro-LED离子注入隔离氮化镓横向结构高光功率密度

Keywords

blue micro-LEDion implantation isolationGaNlateral structurehigh optical power density

references

CHEN C J, CHEN H C, LIAO J H,et al.. Fabrication and characterization of active-matrix 960×540 blue GaN-Based micro-LED display[J].IEEE J. Quantum Electron., 2019, 55(2):3300106-1-6.

DAY J, LI J, LIE D Y, et al.. Ⅲ- nitride full-scale high-resolution microdisplays[J].Appl. Phys. Lett., 2011, 99(3):031116-1-3.

HAN H V, LIN H Y, LIN C C, et al.. Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology[J].Opt. Express, 2015, 23(25):32504-32515.

CHONG W C, CHO W K, LIU Z J, et al.. 1700 pixels per inch(PPI) passive-matrix micro-LED display powered by ASIC[C].Proceedings of 2014IEEE Compound Semiconductor Integrated Circuit Symposium, La Jolla, 2014: 1-4.

WU T Z, SHER C W, LIN Y, et al.. Mini-LED and micro-LED:promising candidates for the next generation display technology[J].Appl. Sci., 2018, 8(9):1557-1-17.

MEI S L, LIU X Y, ZHANG W L, et al.. High-bandwidth white-light system combining a micro-LED with perovskite quantum dots for visible light communication[J].ACS Appl. Mater. Interfaces, 2018, 10(6):5641-5648.

WASISTO H S, PRADES J D, GVLINK J, et al.. Beyond solid-state lighting:miniaturization, hybrid integration, and applications of GaN nano-and micro-LEDs[J].Appl. Phys. Rev., 2019, 6(4):041315-1-40.

HORNG R H, CHIEN H Y, TARNTAIR F G, et al.. Fabrication and study on red light micro-LED displays[J].IEEE J. Electron Devices Soc., 2018, 6:1064-1069.

HUANG Y G, TAN G J, GOU F W, et al.. Prospects and challenges of mini-LED and micro-LED displays[J].J. Soc. Inf. Disp., 2019, 27(7):387-401.

HUANG Y G, HSIANG E L, DENG M Y, et al.. Mini-LED, micro-LED and OLED displays:present status and future perspectives[J].Light Sci. Appl., 2020, 9(1):105-1-16.

DAAMI A, OLIVIER F, DUPRÉ L, et al.. 59-4:Invited Paper:electro-optical size-dependence investigation in GaN micro-LED devices[J].SID Symp. Dig. Tech. Pap., 2018, 49(1):790-793.

ZHU J, TAKAHASHI T, OHORI D, et al.. Near-complete elimination of size-dependent efficiency decrease in GaN micro-light-emitting diodes[J].Phys. Status Solidi A, 2019, 216(22):1900380-1-6.

LIN H Y, SHER C W, HSIEH D H, et al.. Optical cross-talk reduction in a quantum-dot-based full-color micro-light-emitting-diode display by a lithographic-fabricated photoresist mold[J].Photonics Res., 2017, 5(5):411-416.

HIGO A, KIBA T, TAMURA Y, et al.. Light-emitting devices based on top-down fabricated GaAs quantum nanodisks[J].Sci. Rep., 2015, 5:9371-1-8.

SAMUKAWA S. A neutral beam process for controlling surface defect generation and chemical reactions at the atomic layer[J].ECS J. Solid State Sci. Technol., 2015, 4(6):N5089-N5094.

WANG M J, CHEN K J. Improvement of the off-state breakdown voltage with fluorine ion implantation in AlGaN/GaN HEMTs[J].IEEE Trans. Electron Devices, 2011, 58(2):460-465.

XU F, GAO C H, FAN Y M, et al.. Enhanced performance of vertical-structured InGaN micro-pixelated light-emitting-diode array fabricated using an ion implantation process[J].Opt. Lett., 2019, 44(18):4562-4565.

GUO W L, TAI J P, LIU J P, et al.. Process optimization of passive matrix GaN-based micro-LED arrays for display applications[J].J. Electron. Mater., 2019, 48(8):5195-5201.

刘洪楷.采用离子注入工艺制造平面型LED[J].光机电信息, 2000, 17(4):21-22.

LIU H K. Using ion implantation process to manufacture planar LED[J].OME Inf., 2000, 17(4):21-22. (in Chinese)

LIN S X, MENG D, WEN C P, et al.. Analysis on the CTLM and LTLM applicability for GaN HEMTs structure alloyed ohmic contact resistance evaluation[C].Proceedings of 2013IEEE International Conference of Electron Devices and Solid-state Circuits, Hong Kong, China, 2013: 1-2.

OLIVIER F, DAAMI A, LICITRA C, et al.. Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs:a size effect study[J].Appl. Phys. Lett., 2017, 111(2):022104.

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