940 nm水平腔面发射半导体激光器设计与制备

术玲; 海一娜; 邹永刚; 范杰; 王傲

doi:10.37188/CJL.20200346

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940 nm水平腔面发射半导体激光器设计与制备

器件制备及器件物理 | 更新时间：2021-02-08

- 940 nm水平腔面发射半导体激光器设计与制备
- Design and Fabrication of 940 nm Horizontal Cavity Surface Emitting Semiconductor Laser
- 发光学报 2021年42卷第2期页码：223-230
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室, 吉林长春 130022
- 作者简介：
  
  术玲(1995-), 女, 山东济南人, 硕士研究生, 2018年于潍坊学院获得学士学位, 主要从事半导体激光器的研究。E-mail:1457492341@qq.com
  邹永刚(1982-), 男, 吉林长春人, 博士, 研究员, 博士研究生导师, 2009年于吉林大学获得博士学位, 主要从事激光技术与应用、光电子器件等方面的研究。E-mail:zouyg@cust.edu.cn
- 基金信息：
  
  吉林省教育厅(JJKH20190543KJ);吉林省科技发展计划(20180519018JH);吉林省科技发展计划(20190302052GX)
- DOI：10.37188/CJL.20200346
  中图分类号： TN248.4
- 收稿：2020-11-12，
  
  录用：2020-12-7，
  
  纸质出版：2021-02
- 稿件说明：
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术玲, 海一娜, 邹永刚, 等. 940 nm水平腔面发射半导体激光器设计与制备[J]. 发光学报, 2021,42(2):223-230.

Ling ZHU, Yi-na HAI, Yong-gang ZOU, et al. Design and Fabrication of 940 nm Horizontal Cavity Surface Emitting Semiconductor Laser[J]. Chinese Journal of Luminescence, 2021, 42(2): 223-230.
术玲, 海一娜, 邹永刚, 等. 940 nm水平腔面发射半导体激光器设计与制备[J]. 发光学报, 2021,42(2):223-230. DOI： 10.37188/CJL.20200346.

Ling ZHU, Yi-na HAI, Yong-gang ZOU, et al. Design and Fabrication of 940 nm Horizontal Cavity Surface Emitting Semiconductor Laser[J]. Chinese Journal of Luminescence, 2021, 42(2): 223-230. DOI： 10.37188/CJL.20200346.

摘要

水平谐振腔面发射分布反馈（Surface emitting distributed feedback，SE-DFB）半导体激光器因具有更好的光束质量获得了广泛关注。本文设计了波长为940 nm的水平谐振腔面发射分布反馈半导体激光器，分析了光栅的结构参数（形状、周期、占空比、刻蚀深度等）对激光器发光特性（线宽、边模抑制比、功率及斜率效率等）的影响。结合二阶光栅、脊形波导、电极及出光口、解理封装等器件工艺，制备出发光波长为940.3 nm的水平谐振腔面发射半导体激光器，线宽为0.52 nm，连续工作模式下发射功率为890 mW。

Abstract

Due to the better beam quality

horizontal cavity surface emitting distributed feedback(SE-DFB) semiconductor lasers have received widespread attention. In this paper

a horizontal cavity surface emitting distributed feedback semiconductor laser with a wavelength of 940 nm was designed. This paper analyzed the influence of the structure parameters of the grating(shape

period

duty cycle

etched depth

etc

.) on the optical characteristics of the laser(linewidth

side-mode suppression ratio

power and slope efficiency

etc

.). Combined with the fabrication of second-order grating

ridge-shaped waveguide

electrode and light exiting

as well as cleavage and encapsulation technology

the device with optical wavelength of 940.3 nm is prepared. The line width of the device is 0.52 nm

and the surface emission power is 890 mW under continuous operation mode.

关键词

Keywords

references

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