锑化物Ⅱ类超晶格材料外延生长、结构及光学特性研究进展

刘胜达; 房丹; 方铉; 赵鸿滨; 李承林; 王登魁; 王东博; 王晓华; 马晓辉; 魏志鹏

doi:10.37188/CJL.20200304

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锑化物Ⅱ类超晶格材料外延生长、结构及光学特性研究进展

材料合成及性能 | 更新时间：2021-02-08

- 锑化物Ⅱ类超晶格材料外延生长、结构及光学特性研究进展
- Advances in Epitaxial Growth, Structural and Optical Properties of Antimonide-based Type-Ⅱ Superlattices
- 发光学报 2021年42卷第2期页码：165-186
- 作者机构：
  
  1.长春理工大学理学院高功率半导体激光国家重点实验室, 吉林长春 130022
  2.香港中文大学(深圳) 理工学院, 广东深圳 518172
  3.北京有色金属研究总院智能传感功能材料国家重点实验室, 北京 100088
  4.哈尔滨工业大学材料科学与工程学院, 黑龙江哈尔滨 150001
- 作者简介：
  
  [ "刘胜达(1996－), 男, 吉林长春人, 硕士研究生, 2019年于长春理工大学获得学士学位, 主要从事锑化物半导体超晶格物性分析方面的研究。E-mail:liushengda16@163.com" ]
  [ "房丹(1982-)，女，吉林长春人，博士，副研究员，硕士研究生导师，2014年于长春理工大学获得博士学位，主要从事半导体光电子材料与器件、复杂量子材料晶体结构分析等方面的研究。E-mail：fangdan19822011@163.com" ]
  [ "方铉(1983-), 男, 吉林长春人, 博士, 副研究员, 硕士研究生导师, 2015年于长春理工大学获得博士学位, 主要从事低维异质结构半导体光电子材料与器件、低维异质结构表面、界面特性研究等方面的研究。E-mail:fangx@cust.edu.cn" ]
- 基金信息：
  
  深圳市科技计划项目基础研究（自由探索）项目(JCYJ20180307151538972);广东省自然科学基金项目(2020A1515010868);吉林省科技发展计划项目(20200301052RQ);国家自然科学基金(62704018);国家自然科学基金(61574022);国家自然科学基金(61674021);国家自然科学基金(12074045);国家自然科学基金(11674038);国家自然科学基金(61704011);吉林省科技发展计划(20180519017JH);吉林省科技发展计划(20180520177JH);中国博士后科学基金面上项目(2019M652176);中国博士后科学基金面上项目(2019M661680)
- DOI：10.37188/CJL.20200304
  中图分类号： O482.31
- 纸质出版日期：2021-2，
  
  收稿日期：2020-10-13，
  
  录用日期：2020-12-10
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刘胜达, 房丹, 方铉, 等. 锑化物Ⅱ类超晶格材料外延生长、结构及光学特性研究进展[J]. 发光学报, 2021,42(2):165-186.

Sheng-da LIU, Dan FANG, Xuan FANG, et al. Advances in Epitaxial Growth, Structural and Optical Properties of Antimonide-based Type-Ⅱ Superlattices[J]. Chinese Journal of Luminescence, 2021,42(2):165-186.
刘胜达, 房丹, 方铉, 等. 锑化物Ⅱ类超晶格材料外延生长、结构及光学特性研究进展[J]. 发光学报, 2021,42(2):165-186. DOI： 10.37188/CJL.20200304.

Sheng-da LIU, Dan FANG, Xuan FANG, et al. Advances in Epitaxial Growth, Structural and Optical Properties of Antimonide-based Type-Ⅱ Superlattices[J]. Chinese Journal of Luminescence, 2021,42(2):165-186. DOI： 10.37188/CJL.20200304.

摘要

近年来，锑化物Ⅱ类超晶格材料在外延生长和发光性质等方面的研究取得了巨大的进步，为获得高性能中红外波段光电子器件奠定了重要的基础。然而，由于传统的InAs/GaSb体系超晶格材料中内部本征Ga原子缺陷的存在，使得InAs/GaSb材料的少子寿命过短，严重影响了光电子器件性能的提升，因此设计并生长具有长少子寿命的新材料体系超晶格材料具有重要的研究意义。本文对现阶段锑化物Ⅱ类超晶格材料的各类材料体系进行了总结和分析，着重强调了各类材料体系的外延生长条件、结构及光学特性等方面的研究进展，并对锑化物Ⅱ类超晶格材料今后的发展进行了展望。

Abstract

In recent years

antimonide type-Ⅱ superlattices have a great progress in the epitaxial growth and luminescence property research

which has laid an important foundation for the research of high-performance middle infrared band optoelectronic devices. However

due to the existence of intrinsic Ga atomic defects

the traditional InAs/GaSb system superlattice materials make the minority life of InAs/GaSb materials too short

which seriously affects the performance improvement of optoelectronic devices. Therefore

it is of great significance to design and grow new material system superlattice materials with long minor carrier lifetime. This paper summarizes and analyzes the various materials systems of antimonide type-Ⅱ superlattice materials at present

emphasizes the development of epitaxial growth conditions

structure and optical properties of various material systems

and gives a prospect for the future development of antimonide type-Ⅱ superlattice materials.

关键词

锑化物超晶格分子束外延少子寿命

Keywords

antimonidesuperlatticemolecular beam epitaxyminor carrier lifetime

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