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1.江南大学 物联网与工程学院, 江苏 无锡 214122
2.金洲集团有限公司, 浙江 湖州 313000
[ "于平平(1987-), 女, 山东济南人, 博士, 讲师, 2014年于东华大学获得博士学位, 主要从事有机/无机光电器件和超级电容器的研究。E-mail:pingpingyu@jiangnan.edu.cn" ]
[ "姜岩峰(1972-), 男, 吉林四平人, 博士, 教授, 2000年于兰州大学获得博士学位, 主要从事射频集成电路设计与实现, 新型电路结构设计与实现的研究。E-mail:jiangyf@jiangnan.edu.cn" ]
收稿日期:2020-07-29,
录用日期:2020-8-20,
纸质出版日期:2020-11
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于平平, 段伟, 姜岩峰. 硒纳米花/聚苯胺异质结型宽光谱自驱动探测器的制备及性能[J]. 发光学报, 2020,41(11):1391-1396.
Ping-ping YU, Wei DUAN, Yan-feng JIANG. Fabrication and Photoelectric Properties of Self-powered Photodetectors Based on Se Nanoflower/Polyaniline Heterojunctions[J]. Chinese journal of luminescence, 2020, 41(11): 1391-1396.
于平平, 段伟, 姜岩峰. 硒纳米花/聚苯胺异质结型宽光谱自驱动探测器的制备及性能[J]. 发光学报, 2020,41(11):1391-1396. DOI: 10.37188/CJL.20200224.
Ping-ping YU, Wei DUAN, Yan-feng JIANG. Fabrication and Photoelectric Properties of Self-powered Photodetectors Based on Se Nanoflower/Polyaniline Heterojunctions[J]. Chinese journal of luminescence, 2020, 41(11): 1391-1396. DOI: 10.37188/CJL.20200224.
从节能、便携、微型化的角度看,在无电源供给的情况下能够自驱动的光电探测器更能满足现代电子设备的需求。本文采用原位聚合的方法制备了一种基于p型硒纳米花(Se-f)和p型聚苯胺(PANI)的新型异质结结构。Se纳米花结构的高表面积可以吸收更多的光能量,有利于空穴电子对的有效分离。PANI直接沉积于Se-f表面形成高质量的异质结,促进产生内建电场。Se-f/PANI器件在300~700 nm波长范围内均有良好的光电性能和自驱动特性,特别是在无偏压610 nm光照下具有最高的响应度(72.9 mA·W
-1
)、良好的探测度(1.98×10
12
Jones)以及快速的响应速度(上升时间8.6 μs,下降时间3.24 ms)。这将为今后开发高性能自驱动有机/无机光电器件提供一个好的选择。
Self-powered photodetectors operating without any power supply are urgently needed in modern optoelectronic devices from the perspective of energy saving
portability and miniaturization. In this work
a novel heterojunction structure based on p-type selenium nanocrystalline flowers(Se-f) and p-type polyaniline(PANI) was prepared by
in-situ
polymerization. The high surface area of Se-f structure can absorb more light energy
which is conducive to the effective separation of hole electron pairs. PANI nanorods are deposited directly on Se-f surfaces to form high-quality heterojunctions
which enhance the generation of hole electron pairs. Se-f/PANI photodetector exhibits good light response in range of 300-700 nm under 0 V bias
especially under 610 nm light with the highest responsivity(72.9 mA·W
-1
)
good detection rate(1.98×10
12
Jones)
and fast response(rise time of 8.6 μs and decay time of 3.24 ms). This work will provide a new way for the development of high-performance energy-saving organic/inorganic optoelectronic devices in the future.
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