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B-N共掺杂p型MgZnO薄膜的制备与电学性能
Preparation and Electrical Characterization of B-N Codoped p-type MgZnO Film
- 发光学报 2020年41卷第10期 页码：1262-1268
- 作者机构：
北华大学 理学院, 吉林 吉林 132013
- 作者简介：
[ "高丽丽(1972-), 女, 吉林省吉林市人, 博士, 教授, 2011年于吉林大学获得博士学位, 主要从事半导体材料与器件的制备、性能表征和应用等方面的研究。E-mail:gaolili000@sina.com" ]
- 基金信息：吉林省教育厅"十三五"科学技术研究项目(201649)
DOI：10.37188/CJL.20200210
中图分类号： O472收稿日期：2020-07-17，
录用日期：2020-8-16，
纸质出版日期：2020-10
- 稿件说明：
移动端阅览
高丽丽, 王旭. B-N共掺杂p型MgZnO薄膜的制备与电学性能[J]. 发光学报, 2020,41(10):1262-1268.
Li-li GAO, Xu WANG. Preparation and Electrical Characterization of B-N Codoped p-type MgZnO Film[J]. Chinese journal of luminescence, 2020, 41(10): 1262-1268.
高丽丽, 王旭. B-N共掺杂p型MgZnO薄膜的制备与电学性能[J]. 发光学报, 2020,41(10):1262-1268. DOI： 10.37188/CJL.20200210.
Li-li GAO, Xu WANG. Preparation and Electrical Characterization of B-N Codoped p-type MgZnO Film[J]. Chinese journal of luminescence, 2020, 41(10): 1262-1268. DOI： 10.37188/CJL.20200210.
摘要
p型MgZnO的制备一直是高效紫外发光和日盲紫外探测器件研究领域的重要课题之一。本文针对N掺杂p型MgZnO薄膜材料中存在的空穴浓度低、电阻率高等科学问题，采取磁控溅射技术，利用氮气与氩气混合气体分别溅射MgZnO陶瓷靶和B-N共掺杂MgZnO陶瓷靶的方法，制备出N掺杂和B-N共掺杂MgZnO薄膜。通过Hall测量表征发现两种薄膜均呈现p型导电特性，与N掺杂MgZnO相比，B-N共掺MgZnO的空穴浓度从5.53×10
15
cm
-3
提高到2.63×10
17
cm
-3
，而迁移率变化并不明显（从0.83 cm
2
·V
-1
·s
-1
减小到0.75 cm
2
·V
-1
·s
-1
），导致电阻率从1.36×10
3
Ω·cm减小到31.70 Ω·cm。通过XRD和XPS表征揭示了在B-N共掺MgZnO中，B替代Mg或Zn，N除了具有N
O
和（N
2
）
O
两种掺杂状态外，还有以单原子占据O位但与B成键的第三种掺杂状态，证明B掺杂可以提高N在MgZnO中的受主掺杂浓度，但对空穴散射影响很小，从而提高p型MgZnO的空穴浓度，降低电阻率。
Abstract
Preparation of p-type MgZnO film is still one subject of high-efficiency ultraviolet luminescence and solar-blind ultraviolet photodetectors devices. In this work
aiming at the problems of low carrier concentration and high resistivity in N-doped p type MgZnO film
using 99.99% pure nitrogen and argon as sputtering gas
p-type B-N co-doped MgZnO film and N doped MgZnO film were deposited on quartz substrate by radio frequency magnetron sputtering with B-N co-doped MgZnO target and N doped MgZnO target respectively. It is found that the prepared MgZnO films show p-type electrical properties by a Hall effect measurement. Compared with N-doped MgZnO film
the carrier concentration of B-N co-doped MgZnO film is increased from 5.53×10
15
cm
-3
to 2.63×10
17
cm
-3
the Hall mobility is decreased from 0.83 cm
2
·V
-1
·s
-1
to 0.75 cm
2
·V
-1
·s
-1
and the resistivity is decreased remarkably from 1.36×10
3
Ω·cm to 31.70 Ω·cm. The measurement of XRD and XPS reveals that B occupies Zn site or Mg site and N has three doping states. The first state is that N atom occupies O site which is the nearest neighbor with Zn or Mg atom
forming N
O
. The second state is that N
2
occupies O site
forming (N
2
)
O
. The third state is that N atom occupies O site which is the nearest neighbor with B atom
forming B-N pair. Therefore
B doping can improve the N dopant acceptor concentration
affect little on holes scattering and reduce resistivity of p-type MgZnO.
关键词
Keywords
references
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