高度集成的μLED显示技术研究进展

严子雯; 严群; 李典伦; 张永爱; 周雄图; 叶芸; 郭太良; 孙捷

doi:10.37188/CJL.20200191

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高度集成的μLED显示技术研究进展

发光产业及技术前沿 | 更新时间：2020-10-12

- 高度集成的μLED显示技术研究进展
- Research Progress of High Integration Density μLED Display Technology
- 发光学报 2020年41卷第10期页码：1309-1317
- 作者机构：
  
  1.福州大学物理与信息工程学院, 福建福州 350108
  2.中国福建光电信息科学与技术创新实验室, 福建福州 350117
- 作者简介：
  
  [ "严子雯(1995-), 女, 陕西西安人, 硕士研究生, 2017年于西安邮电大学获得学士学位, 主要从事化学液相沉积法制备氧化物薄膜及应用、以及氮化镓μLED微显示的研究。E-mail: 729384816@qq.com" ]
  [ "孙捷(1977-), 男, 内蒙古阿拉善人, 博士, 教授, 博士研究生导师, 2007年于中国科学院半导体研究所获得博士学位, 主要从事氮化镓μLED集成信息显示、二维半导体材料生长及其在纳米电子学中应用的研究。E-mail: jie.sun@fzu.edu.cn" ]
- 基金信息：
  
  国家自然科学基金面上项目(11674016);科技部战略性先进电子材料重点专项(2017YFB0403102)
- DOI：10.37188/CJL.20200191
  中图分类号： TN312.8
- 纸质出版日期：2020-10，
  
  收稿日期：2020-7-3，
  
  录用日期：2020-8-4
扫描看全文
严子雯, 严群, 李典伦, 等. 高度集成的μLED显示技术研究进展[J]. 发光学报, 2020,41(10):1309-1317.

Zi-wen YAN, Qun YAN, Dian-lun LI, et al. Research Progress of High Integration Density μLED Display Technology[J]. Chinese Journal of Luminescence, 2020,41(10):1309-1317.
严子雯, 严群, 李典伦, 等. 高度集成的μLED显示技术研究进展[J]. 发光学报, 2020,41(10):1309-1317. DOI： 10.37188/CJL.20200191.

Zi-wen YAN, Qun YAN, Dian-lun LI, et al. Research Progress of High Integration Density μLED Display Technology[J]. Chinese Journal of Luminescence, 2020,41(10):1309-1317. DOI： 10.37188/CJL.20200191.

摘要

微型发光二极管（μLED）是当今国际最前沿的显示技术之一，它一般指单个尺寸小于50 μm的LED阵列。μLED相对于液晶显示（LCD）、有机发光二极管（OLED）显示等技术有其独特的优势:寿命长、响应时间短、亮度高。最重要的是，它可以实现高度集成显示，既包括像素密度远远高于常规显示技术的高PPI显示器件，也包括我们首次提出的集成了某些非显示元件的超大规模集成半导体信息显示器件（HISID）。在许多显示技术的指标上，μLED的性能都很优异。但是，由于μLED将常规LED器件的尺寸大大缩小，且往往密度提高，因此产生了许多新的技术和物理上的挑战，例如巨量转移技术、全彩化显示等，所以μLED尚未实现真正意义上的产业化。本文对高度集成μLED显示技术的研究和发展情况进行了较系统的论述，首先对μLED的基本原理和结构进行了介绍，然后对其重点核心技术进行了分类研究和点评，最后对μLED显示技术的发展方向及其应用前景做出了分析。

Abstract

Micro light-emitting diode(μLED) is one of the most cutting-edge display technologies in the world. It generally refers to the LED array with a single mesa size less than 50 microns. Compared with liquid crystal display(LCD) and organic light emitting diode(OLED) display

μLED display technology has its unique advantages: long lifetime

short response time

and high brightness. Most importantly

it enables the realization of highly integrated displays

which includes both high-PPI displays with much higher pixel densities than conventional display technologies

and highly integrated semiconductor information displays(HISID) that have been proposed first by us and contain certain non-display components. In many figures of merit of display technology

μLEDs perform excellently. However

as μLEDs greatly reduce the size of conventional LED devices and typically have an increased device density

many new technical and physical challenges have arisen

such as mass transfer technology

full-color display

etc

. Therefore

μLEDs have not yet achieved any real industrialization. In this paper

the highly integrated μLED display technology research and progress are described systematically. First of all

the basic principle and structure of μLEDs are introduced

followed by the classification and review of the key technologies. Finally

the development trends and application prospects of the μLED display technology are analyzed.

关键词

微型发光二极管(μLED)驱动巨量转移全彩化高度集成

Keywords

micro light-emitting diode(μLED)drivermass transfer technologycolorizationhigh integration density

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