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1. 中国科学院 激发态物理重点实验室 长春光学精密机械与物理研究所
2. 中国科学院 苏州生物医学工程技术研究所
3. 中国科学院 研究生院
收稿:2011-04-08,
修回:2011-5-12,
网络首发:2011-09-22,
纸质出版:2011-09-22
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田振华, 胡永生, 秦莉, 张金龙, 宁永强, 王立军, 刘云. 高功率垂直腔面发射激光器的光束准直特性[J]. 发光学报, 2011,32(9): 939-943
TIAN Zhen-hua, HU Yong-sheng, QIN Li, ZHANG Jin-long, NING Yong-qiang, WANG Li-jun, LIU Yun. Collimation of High Power Vertical Cavity Surface Emitting Laser[J]. Chinese Journal of Luminescence, 2011,32(9): 939-943
田振华, 胡永生, 秦莉, 张金龙, 宁永强, 王立军, 刘云. 高功率垂直腔面发射激光器的光束准直特性[J]. 发光学报, 2011,32(9): 939-943 DOI:
TIAN Zhen-hua, HU Yong-sheng, QIN Li, ZHANG Jin-long, NING Yong-qiang, WANG Li-jun, LIU Yun. Collimation of High Power Vertical Cavity Surface Emitting Laser[J]. Chinese Journal of Luminescence, 2011,32(9): 939-943 DOI:
基于高斯光束的准直原理
针对不同结构参数的大功率垂直腔面发射激光器光束特征
通过选用合适参数的透镜
研究了不同连续和脉冲电流条件激励下光束的准直特性。对于出光口径为200
&
mu;m的器件
通过
f
=3.1 mm
NA
=0.68的透镜
连续工作条件下
准直后的最小发散角达到1
&
deg;;在电流为40 A、 脉宽60 ns、重复频率1 kHz的脉冲工作条件下
准直后的最小发散角达到2
&
deg;。实验还证明
在
NA
不变的条件下
准直后的最小发散角随透镜焦距的增大而线性减小。
paper
Iga K. Fundamental and Applications of Surface Emitting Lasers [M]. Beijing: Science Press, 2002, Chapter 7:1-2.[2] Iga K. Vertical-cavity surface-emitting laser:Its conception and evolution [J]. Japanese J. Appl. Phys., 2008, 47 (1):1-10.[3] Ma Qiang, Tian Zhenhua, Wang Zhenfu, et al. A theoretical model of high power VCSEL based on the thermal-offset-current [J]. Chin. J. Lumin.(发光学报), 2009, 30 (4):463-466 (in Chinese).[4] Zhang Yan, Ning Yongqian, Qin Li, et al. Design and fabrication of vertical-cavity surface-emitting laser with simall divergence [J]. Chin. J. Lumin.(发光学报), 2011, 32 (1):47-52 (in Chinese).[5] Sun Chenglin, Tian Zhenhua, Jia Lihua, et al. Design and fabrication of 970 nm reflection-mode vertical cavity smiconductor optical amplifiers [J]. Chin. J. Lumin.(发光学报), 2011, 32 (1):53-57 (in Chinese).[6] Jewell J L, Schere A, McCall S L, et al. Low-threshold electrically pumped vertical-cavity surface-emitting microlasers [J]. Electron. Lett., 1989, 25 (17):1123-1124.[7] Geels R S, Corzine S W, Scott J W, et al. Low-threshold planarized vertical-cavity surface-emitting lasers[J]. IEEE Photon Technol. Lett., 1990, 2 (1):234-236.[8] Orenstein M, Von Lehmen A C, Chang-Hasnain C, et al. Vertical-cavity surface-emitting InGaAs/GaAs lasers with planar lateral denfinition [J]. Appl. Phys. Lett., 1990, 56 (24):2384-2386.[9] Tell B, Lee Y H, Brown-Goebeler K F, et al. High-power cw vertical-cavity top surface-emitting GaAs quantum well lasers[J]. Appl. Phys. Lett., 1990, 57 (18):1855-1857.[10] Huffaker D L, Deppe D G, Kumar K, et al. Native-oxide defined ring contact for low thresold vertical-cavity lasers [J]. Appl. Phys. Lett., 1994, 65 (1):97-99.[11] Choquette K D, Hou H Q. Vertical-cavity surface emitting laser: Moving from research to manufacturing [J]. Proc. IEEE, 1997, 85 (11):1730-1739.[12] Huffaker D L, Graham L A, Deng H, et al. Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface emitting laser with dielectric mirrors [J]. IEEE Photon. Technol. Lett., 1996, 8 (8):874-976.[13] Grabherr M, Miller M, Jger R R, et al. High-power VCSEL's: Single devices and densely packed 2-D-arrays [J]. IEEE J. Sel. Top. Quantum Electron, 1999, 5 (3):495-502.
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