MOCVD法制备Cu掺杂ZnO薄膜

许露; 梁红伟; 刘远达; 李春野; 柳阳; 边继明; 李国兴; 李万程; 吴国光; 杜国同

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MOCVD法制备Cu掺杂ZnO薄膜

器件制备及器件物理 | 更新时间：2020-08-12

- MOCVD法制备Cu掺杂ZnO薄膜
- Cu-doped ZnO Thin Film Prepared by Metallorganic Chemical Vapor Deposition
- 发光学报 2011年32卷第9期页码：956-961
- 作者机构：
  
  1. 大连理工大学物理与光电工程学院
  2. 吉林大学电子与信息工程学院集成光电子学国家重点联合实验室
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60976010,10804040,10804014,60877020,11004020,601706045)();大连理工大学基本科研业务费(DUT
- DOI：
  中图分类号： O472.3;O482.31
- 收稿：2011-03-08，
  
  修回：2011-4-21，
  
  网络首发：2011-09-22，
  
  纸质出版：2011-09-22
- 稿件说明：
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许露, 梁红伟, 刘远达, 李春野, 柳阳, 边继明, 李国兴, 李万程, 吴国光, 杜国同. MOCVD法制备Cu掺杂ZnO薄膜[J]. 发光学报, 2011,32(9): 956-961

XU Lu, LIANG Hong-wei, LIU Yuan-da, LI Chun-ye, LIU Yang, BIAN Ji-ming, LI Guo-xing, LI Wan-cheng, WU Guo-guang, DU Guo-tong. Cu-doped ZnO Thin Film Prepared by Metallorganic Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2011,32(9): 956-961
许露, 梁红伟, 刘远达, 李春野, 柳阳, 边继明, 李国兴, 李万程, 吴国光, 杜国同. MOCVD法制备Cu掺杂ZnO薄膜[J]. 发光学报, 2011,32(9): 956-961 DOI：

XU Lu, LIANG Hong-wei, LIU Yuan-da, LI Chun-ye, LIU Yang, BIAN Ji-ming, LI Guo-xing, LI Wan-cheng, WU Guo-guang, DU Guo-tong. Cu-doped ZnO Thin Film Prepared by Metallorganic Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2011,32(9): 956-961 DOI：

摘要

通过金属有机物化学气相沉积(MOCVD)设备

在

-Al

衬底上生长本征和 Cu掺杂ZnO(ZnO:Cu)薄膜。X射线衍射(XRD)谱观察到未掺杂的ZnO和ZnO:Cu样品都呈现出较好的

轴择优取向生长。X射线光电子能谱(XPS)表明Cu已掺入到ZnO薄膜中。利用光致发光(PL)测试对本征ZnO和ZnO:Cu进行室温和低温PL测试

在ZnO:Cu样品的低温PL谱中观察到一个强度很强、范围很广的蓝紫光发射峰(Blue-violet发射峰

BV发射峰)

范围在2.8~3.3 eV之间

又进一步通过变温PL测试发现随着温度的升高

BV发射峰峰位发生红移

且80 K时BV发射峰高能边出现自由电子向受主能级(eA

)的跃迁发光

并计算了Cu受主离化能。

Abstract

paper

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Keywords

references

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