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1. 中国科学院 上海硅酸盐研究所, 上海 200050
2. 上海大学材料科学与工程学院 电子信息材料系
收稿:2011-05-26,
修回:2011-6-12,
网络首发:2011-09-22,
纸质出版:2011-09-22
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沈思情, 许志斌, 马清, 谢建军, 施鹰, 袁晖, 熊巍. Ce:LSO多晶薄膜的溶胶-凝胶法制备及其发光性能[J]. 发光学报, 2011,32(9): 880-884
SHEN Si-qing, XU Zhi-bin, MA Qing, XIE Jian-jun, SHI Ying, YUAN Hui, XIONG Wei. Sol-gel Synthesis and Luminescence Properties of Ce:LSO Polycrystalline Films[J]. Chinese Journal of Luminescence, 2011,32(9): 880-884
沈思情, 许志斌, 马清, 谢建军, 施鹰, 袁晖, 熊巍. Ce:LSO多晶薄膜的溶胶-凝胶法制备及其发光性能[J]. 发光学报, 2011,32(9): 880-884 DOI:
SHEN Si-qing, XU Zhi-bin, MA Qing, XIE Jian-jun, SHI Ying, YUAN Hui, XIONG Wei. Sol-gel Synthesis and Luminescence Properties of Ce:LSO Polycrystalline Films[J]. Chinese Journal of Luminescence, 2011,32(9): 880-884 DOI:
采用Pechini 溶胶-凝胶法结合旋涂工艺在单晶硅(111)上制备了Ce
3+
离子掺杂的硅酸镥(Lu
2
SiO
5
) 薄膜
利用热重差热分析(TG-DSC)、X射线衍射(XRD)、扫描电镜(SEM)、真空紫外光谱(VUV) 及椭偏(SE) 测试对Ce: Lu
2
SiO
5
薄膜的物相、形貌、发光性质和光学常数进行了表征。结果表明:薄膜样品从900 ℃开始晶化
1 100 ℃时晶化完全。薄膜表面均匀、平整、无裂纹。真空紫外激发光谱中存在较强的基质发射
发射光谱是一个350~500 nm 的宽带谱
宽带中心在400 nm左右。折射率、消光系数分别为1.82~1.94和0.005~0.05
厚度与SEM测试结果相一致。
paper
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