PrF3阳极缓冲层对OLED器件性能的影响

廖亚琴; 陈红; 刘星元

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PrF₃阳极缓冲层对OLED器件性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- PrF₃阳极缓冲层对OLED器件性能的影响
- Effect of PrF₃ Anode Buffer Layer on The Performance of OLED
- 发光学报 2011年32卷第9期页码：929-933
- 作者机构：
  
  1. 中国科学院研究生院
  2. 中国科学院激发态物理重点实验室长春光学精密机械与物理研究所
- 作者简介：
- 基金信息：
  
  吉林省科技发展计划项目(20090346,20100570)资助()
- DOI：
  中图分类号： TN383.1
- 收稿：2011-03-29，
  
  修回：2011-5-24，
  
  网络首发：2011-09-22，
  
  纸质出版：2011-09-22
- 稿件说明：
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廖亚琴, 陈红, 刘星元. PrF3阳极缓冲层对OLED器件性能的影响[J]. 发光学报, 2011,32(9): 929-933

LIAO Ya-qin, CHEN-hong, LIU Xing-yuan. Effect of PrF3 Anode Buffer Layer on The Performance of OLED[J]. Chinese Journal of Luminescence, 2011,32(9): 929-933
廖亚琴, 陈红, 刘星元. PrF3阳极缓冲层对OLED器件性能的影响[J]. 发光学报, 2011,32(9): 929-933 DOI：

LIAO Ya-qin, CHEN-hong, LIU Xing-yuan. Effect of PrF3 Anode Buffer Layer on The Performance of OLED[J]. Chinese Journal of Luminescence, 2011,32(9): 929-933 DOI：

摘要

使用真空热蒸镀法制备的OLED器件

利用不同厚度的PrF

作阳极缓冲层

并和未加缓冲层的器件进行了对比。实验结果表明: 0.5 nm厚的PrF

阳极缓冲层可以有效增强OLED器件的空穴注入能力

增强电子和空穴的浓度平衡

优化器件的电致发光特性。器件的最大电流效率为4.9 cd/A

最大亮度为33 600 cd/m

分别是未加入缓冲层的常规器件(3.7 cd/A

最大亮度为12 230 cd/m

)的1.3倍和2.75倍。

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references

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