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哈尔滨理工大学 应用科学院, 黑龙江 哈尔滨 150080
收稿:2010-01-25,
修回:2010-6-24,
网络首发:2011-03-22,
纸质出版:2011-03-22
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李彩霞, 林家齐, 倪海芳. 聚酰亚胺薄膜的电致发光和光致发光[J]. 发光学报, 2011,32(3): 232-236
LI Cai-xia, LIN Jia-qi, NI Hai-fang. Electroluminescence and Photoluminescence of Polyimide Films[J]. Chinese Journal of Luminescence, 2011,32(3): 232-236
测量了氙灯辐照后聚酰亚胺(PI)薄膜的光致发光(PL)强度、PL谱和氙灯辐照后直流高电场下PI薄膜的电致发光(EL)强度、EL谱、XRD谱和吸收光谱
研究了其EL、PL特性与微观结构的关系。结果表明: PI薄膜的PL强度随测量时间呈指数衰减
EL强度随场强呈指数增长;辐照39 h后
PI的预击穿场强为2.56 MV/cm
低于原始PI的2.8 MV/cm;EL和PL光谱均在320
395
443
585
656
752 nm附近出现发光峰;辐照时间增长
PL强度明显增大
衰减变慢
PL峰数减少且红移
吸收边的最大吸收波长红移;场强增加
EL峰数减少且发生蓝移;由吸收边算得PI的光能隙约为2.76 eV
比由PL光谱算得的结果小0.38 eV。这些结果由光老化和电老化的综合作用所致。
paper
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