高取向As掺杂ZnO纳米线阵列的制备与表征

冯秋菊; 冯宇; 梁红伟; 王珏; 陶鹏程; 蒋俊岩; 赵涧泽; 李梦轲; 宋哲; 孙景昌

doi:null

您当前的位置：

首页 >

文章列表页 >

高取向As掺杂ZnO纳米线阵列的制备与表征

材料合成及性能研究 | 更新时间：2020-08-12

- 高取向As掺杂ZnO纳米线阵列的制备与表征
- Fabrication and Characterization of Well-aligned Arsenic-doped ZnO Nanowires
- 发光学报 2011年32卷第2期页码：154-158
- 作者机构：
  
  1. 大连理工大学物理与光电工程学院
  2. 辽宁师范大学物理与电子技术学院
- 作者简介：
- 基金信息：
  
  国家自然科学基金(10804040)();中国博士后科学基金(20070411069)();辽宁省博士科研启动基金(20081081)();辽宁省教育厅创新团队基金(2
- DOI：
  中图分类号： O472;O482.31
- 收稿：2010-05-27，
  
  修回：2010-8-27，
  
  网络首发：2011-02-22，
  
  纸质出版：2011-02-22
- 稿件说明：
移动端阅览
冯秋菊, 冯宇, 梁红伟, 王珏, 陶鹏程, 蒋俊岩, 赵涧泽, 李梦轲, 宋哲, 孙景昌. 高取向As掺杂ZnO纳米线阵列的制备与表征[J]. 发光学报, 2011,32(2): 154-158

FENG Qiu-ju, FENG Yu, LIANG Hong-wei, WANG Jue, TAO Peng-cheng, JIANG Jun-yan, ZHAO Jian-ze, LI Meng-ke, SONG Zhe, SUN Jing-chang. Fabrication and Characterization of Well-aligned Arsenic-doped ZnO Nanowires[J]. Chinese Journal of Luminescence, 2011,32(2): 154-158
冯秋菊, 冯宇, 梁红伟, 王珏, 陶鹏程, 蒋俊岩, 赵涧泽, 李梦轲, 宋哲, 孙景昌. 高取向As掺杂ZnO纳米线阵列的制备与表征[J]. 发光学报, 2011,32(2): 154-158 DOI：

FENG Qiu-ju, FENG Yu, LIANG Hong-wei, WANG Jue, TAO Peng-cheng, JIANG Jun-yan, ZHAO Jian-ze, LI Meng-ke, SONG Zhe, SUN Jing-chang. Fabrication and Characterization of Well-aligned Arsenic-doped ZnO Nanowires[J]. Chinese Journal of Luminescence, 2011,32(2): 154-158 DOI：

摘要

在不采用任何金属催化剂的条件下

运用化学气相沉积法

在 Si(100)衬底上制备出高取向的As掺杂ZnO纳米线阵列。样品的X射线衍射(XRD)谱显示获得了单一取向的衍射峰

表明样品具有较好的结晶质量。场发射扫描电镜(FE-SEM)观察表明

As掺杂ZnO纳米线阵列具有均一的直径和长度

其顶部和根部直径分别为70 nm和100 nm

长度约为1.5

mu;m。此外

在能量色散谱(EDS)中观测到了As元素的存在。在低温(11 K)光致发光谱中还观测到了与As掺杂相关的中性受主束缚激子发光(A

证实As元素作为受主掺杂进入ZnO晶格。As掺杂ZnO纳米线的成功制备为ZnO基纳米光电器件的实现提供了一种可行的p型掺杂方法。

Abstract

paper

关键词

Keywords

references

Gao Shuxia, Wang Deyi. Influence of annealing temperature on structure and optical properties of Na-doped ZnO thin films prepared by sol-gel method [J]. Chin. J. Lumin. (发光学报), 2010, 30 (1):81-85 (in Chinese).[2] Ning Dan, Liu Chengyou. Structural and optical peroperties of MgxZn1-xO films [J]. Chin. J. Lumin. (发光学报), 2010, 30 (1):559-561 (in Chinese).[3] Li Qingwei, Bian Jiming, Wang Jingwei, et al. Optical properties of Co-doped ZnO nanorods synthesized by a hydrothermal method [J]. Chin. J. Lumin. (发光学报), 2010, 31 (2):253-257 (in Chinese).[4] Tang Z K, Wong G K L, Yu P, et al. Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films [J]. Appl. Phys. Lett., 1998, 72 (25):3270-3272.[5] Jiao S J, Zhang Z Z, Lu Y M, et al. ZnO p-n junction light-emitting diodes fabricated on sapphire substrates [J]. Appl. Phys. Lett., 2006, 88 (3):031911-1-3.[6] Liu W, Gu S L, Ye J D, et al. Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique [J]. Appl. Phys. Lett., 2006, 88 (9):092101-1-3.[7] Liang H W, Lu Y M, Shen D Z, et al. p-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO [J]. Phys. Stat. Soli. (a), 2005, 202 (6):1060-1064.[8] Geng C, Jiang Y, Yao Y, et al. Well-aligned ZnO nanowire arrays fabricated on silicon substrates [J]. Adv. Funct. Mater., 2004, 14 (6):589-594.[9] Yang P, Yan H, Mao S, et al. Controlled growth of ZnO nanowires and their optical properties [J]. Adv. Funct. Mater., 2002, 12 (5):323-331.[10] Xiang Bin, Wang Pengwei, Zhang Xingzheng, et al. Rational synthesis of p-type zinc oxide nanowire arrays using simple chemical vapor deposition [J]. Nano Lett., 2007, 7 (2):323-328.[11] Zang C H, Zhao D X, Tang Y, et al. Acceptor related photoluminescence from ZnO ∶ Sb nanowires fabricated by chemical vapor deposition method [J]. Chem. Phys. Lett., 2008, 452 (1-3):148-150.[12] Yang Y, Qi J J, Zhang Y, et al. Controllable fabrication and electromechanical characterization of single crystalline Sb-doped ZnO nanobelts [J]. Appl. Phys. Lett., 2008, 92 (18):183117-1-3.[13] Zou K, Qi X Y, Duan X F, et al. Sb-induced bicrystal ZnO nanobelts [J]. Appl. Phys. Lett., 2005, 86 (1):013103-1-3.[14] Park K, Seong J K, Nahm S. Improvement of thermoelectric properties with the addition of Sb to ZnO [J]. J. Alloys and Compounds, 2008, 455 (1-2):331-335.[15] Shan C X, Liu Z, Hark S K. Temperature dependent photoluminescence study on phosphorus doped ZnO nanowires [J]. Appl. Phys. Lett., 2008, 92 (7):073103-1-3.[16] Hsu C L, Chang S J, Lin Y R, et al. Vertically well aligned P-doped ZnO nanowires synthesized on ZnO-Ga/glass templates [J]. Chem. Commun., 2005(28):3571-3573.[17] Lee C Y, Tseng T Y, Li S Y, et al. Effect of phosphorus dopant on photoluminescence and field-emission characteristics of MgZnO nanowires [J]. J. Appl. Phys., 2006, 99 (2):024303-1-3.[18] Zhang Junyan, Deng Tiansong, Shen Xi, et al. Electrical and optical properties of single As-doped ZnO nanowire field effect transistors [J]. Acta Physica Sinica (物理学报), 2009, 58 (6):4156-4161 (in Chinese).[19] Zhang J Y, Li P J, Sun H, et al. Ultraviolet electroluminescence from controlled arsenic-doped ZnO nanowire homojunctions [J]. Appl. Phys. Lett., 2008, 93 (2):021116-1-3.[20] Sun M H, Zhang Q F, Wu J L. Electrical and electroluminescence properties of As-doped p-type ZnO nanorod arrays [J]. J. Phys. D: Appl. Phys., 2007, 40 (12):3798-3802.[21] Huang M H, Wu Y Y, Feick H. Catalytic growth of zinc oxide nanowires by vapor transport [J]. Adv. Mater., 2001, 13 (2):113-116.[22] Yang Y H, Wang B, Wang C X, et al. Radial ZnO nanowire nucleation on amorphous carbons [J]. Appl. Phys. Lett., 2005, 87 (18):183109-1-3.[23] Zhang B P, Binh N T, Segawa Y, et al. Optical properties of ZnO rods formed by metalorganic chemical vapor deposition [J]. Appl. Phys. Lett., 2003, 83 (8):1635-1637.[24] Sun J C, Liang H W, Zhao J Z, et al. Annealing effects on electrical and optical properties of ZnO films deposited on GaAs by metal organic chemical vapor deposition [J]. Appl. Surf. Sci., 2008, 254 (22):7482-7485.[25] Ryu Y R, Lee T S, White H W. Properties of arsenic-doped p-type ZnO grown by hybrid beam deposition [J]. Appl. Phys. Lett., 2003, 83 (1):87-89.

浏览量

401

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

氧化锌纳米结构的制备及发光性质研究

电感耦合等离子体辅助及H2/N2气氛调控对非晶Ga2O3薄膜发光特性的影响

Pr3+对Ce3+掺杂高钆铝硼硅酸盐氟氧玻璃发光性能及能量传递机理

Sr6GdAl（BO3）6∶Dy3+荧光粉的能量传递和发光特性

一步法原位合成Cs2NaInCl6@PVDF薄膜：掺杂调控与光学性能