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收稿:2011-09-07,
修回:2011-10-10,
网络首发:2011-10-12,
纸质出版:2011-10-12
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贾辉 孙晓娟 蒋红 李志明 缪国庆 黎大兵 宋航 陈一仁. 预通三甲基铝(TMAl)对AlN薄膜的结构与应变的影响[J]. 发光学报, 2011,32(4): 0-0
. Effect of trimethyl–aluminum preflow on the structure and strain properties of AlN films[J]. Chinese Journal of Luminescence, 2011,32(4): 0-0
采用有机金属化学气相沉积用两步生长法在(0001)蓝宝石衬底上AlN薄膜。研究了预通三甲基铝(TMAl)使衬底铝化对外延AlN的影响。利用高分辨X射线衍射技术(XRD)和扫描电子显微镜(SEM) 分析了样品的结晶质量以及外延膜中的残余应力. 通过SEM观察发现短时间的预通TMAl处理对AlN薄膜表面的影响不大;但随着预通时间的增加,表面会出现六角形的岛。其原因由于通过优化TMAl的预通时间可以保护衬底被氮化有利于Al极性面AlN的生长,从而得到的Al极性面AlN表面比较平整;但是随着预通TMAl时间过长会使衬底表面沉积金属态铝而不容易形成平整的表面。X射线双晶摇摆曲线结果表明:样品的(0002)和(10-12)面的X射线双晶摇摆曲线的半峰宽随着预通TMAl时间的不断增加,由此得出薄膜的晶体质量不断下降。这可以解释为:预通TMAl使形成的晶核不再规则,从而在成核层形成了很多亚颗粒降低了晶体质量。进一步对XRD结果分析,我们也发现了这样的应力变化。这种应力的变化的起源可以归结于内应力(岛的合并在其晶界引入的应力)与外应力(晶格失配与热失配引起的应力)共同作用的结果。
paper
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