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广东工业大学 材料与能源学院
收稿:2011-04-06,
修回:2011-6-30,
网络首发:2011-10-22,
纸质出版:2011-10-22
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高振杰, 杨元政, 谢致薇, 王彦利. 射频磁控溅射法制备的Eu掺杂ZnO 薄膜的结构及其发光性质[J]. 发光学报, 2011,32(10): 1004-1008
GAO Zhen-jie, YANG Yuan-zheng, XIE Zhi-wei, WANG Yan-li. Structural and Photoluminescence Properties of Eu-doped ZnO Thin Films Grown by RF Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2011,32(10): 1004-1008
高振杰, 杨元政, 谢致薇, 王彦利. 射频磁控溅射法制备的Eu掺杂ZnO 薄膜的结构及其发光性质[J]. 发光学报, 2011,32(10): 1004-1008 DOI:
GAO Zhen-jie, YANG Yuan-zheng, XIE Zhi-wei, WANG Yan-li. Structural and Photoluminescence Properties of Eu-doped ZnO Thin Films Grown by RF Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2011,32(10): 1004-1008 DOI:
用射频磁控溅射法在石英衬底上制备了ZnO∶Eu
3+
薄膜
通过X射线衍射仪﹑扫描电子显微镜和荧光光谱仪测试了薄膜结构﹑形貌以及发光性能
重点考察了溅射功率和退火工艺对其组织结构和发光性能的影响。结果表明:样品均呈现ZnO的六角纤锌矿结构
增大溅射功率有利于形成ZnO的
c
轴择优取向;增大溅射功率以及高温退火会使晶粒尺寸增大;观察到稀土元素内部4f壳层的电子跃迁以及从ZnO基质到Eu
3+
离子之间的能量传递现象
增大溅射功率以及780 ℃退火能提高ZnO∶Eu
3+
薄膜的发光特性。
paper
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