Jeong P, Lee C C. An electrical model with junction temperature for light-emitting diodes and the impact on conversion efficiency [J]. IEEE Electron Device Lett., 2005, 26 (5):308-310.[2] Sugiura L. Comparison of degradation caused by dislocation motion in compound semiconductor light-emitting devices [J]. Appl. Phys. Lett., 1997, 70 (10):1317-1-3.[3] Wang Jian, Huang Xian, Liu Li, et al. Effect of temperature and current on LED luminous efficiency [J]. Chin. J. Lumin.(发光学报), 2008, 29 (2):358-362 (in Chinese).[4] Fang Fubo, Wang Yaohao, Song Daihui, et al. Spectroscopic analysis of white LED attenuation [J]. Chin. J. Lumin. (发光学报), 2008, 29 (2):358-362 (in Chinese).[5] Sékely V, Rencz M. Increasing the accuracy of thermal transient measurements [J]. IEEE Trans. Compon. Pack Techn., 2002, 25 (4):539-546.[6] Paasschens J C J, Harmsma S, Vander R. Toom dependence of thermal resistance on ambient and actual temperature [J]. IEEE BCTM, 2004, 5 (1):96-99.[7] Sékely V. THERMODEL: a tool for compact dynamic thermal model generation [J]. Microelectron J., 1998, 29 (4-5):257-267.[8] Csendes A, Székely V, Rencz M. An efficient thermal simulation tool for ICs, microsystem elements and MCMs: the μS-THERMANAL [J]. Microelectron J., 1998, 29 (4-5):241-255.[9] Rencz M, Poppe A, Kollár E, et al. Increasing the accuracy of structure function based thermal material parameter measurements [J]. IEEE Transactions Components Pack. Techn., 2005, 28 (1):51-57.[10] Sékely V, Bien T V. Fine structure of heat flow path in semiconductor devices: A measurement and identification method [J]. Solid State Electron., 1988, 31 (9):1363-1368.[11] Cheung S K, Cheung N W. Extraction of Schottky diode parameters from forward current-voltage characteristics [J]. Appl. Phys. Lett., 1986, 49 (2):85-87.