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1. 北京师范大学 物理系
2. 北京师范大学 分析测试中心
3. 中国地质大学(北京) 材料科学与工程学院
收稿:2009-11-19,
修回:2010-2-25,
网络首发:2010-11-22,
纸质出版:2010-11-22
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吴正龙, 王金梅, 王亚芳, 陈鸾, 杨百瑞. 闪烁晶体碘化铯在紫外光和X射线激发下的发光特性[J]. 发光学报, 2010,31(6): 831-835
WU Zheng-long, WANG Jin-mei, WANG Ya-fang, CHEN Luan, YANG Bai-rui. Emission Properties of Scintillator Crystal CsI:Tl Excited by X-ray and UV Light[J]. Chinese Journal of Luminescence, 2010,31(6): 831-835
室温下掺铊碘化铯(CsI:Tl)晶体的吸收谱在230~320nm范围内有3个特征峰:310nm(4eV)、270nm(4.6eV)和245nm(5.1eV)。采用这3种不同激发能量(对应不同激发机制)的近紫外(UV)光激发得到的荧光(PL)光谱相同。这些PL谱与钨(W)靶X射线激发的辐照致荧光(RL)谱也类似。经分峰计算
PL和RL均含有4种熟知的3.1eV(400nm)、2.55eV(486nm)、2.25eV(550nm)和2.1eV(590nm)发光组分
但RL中2.1eV组分高于PL
同时2.55eV组分又低于PL。分析认为
这一差异来自于X射线对晶体的辐照损伤Tl
+
Va
+
、Tl
0
Va
+
相关的2.1eV吸收峰与2.55eV发光带重叠。结果表明:X射线比紫外光更易产生损伤从而影响晶体CsI:Tl的发光特性。
paper
Babin V, Fabeni P, Kalder K, et al. Photo- and thermally stimulated luminescence and defect in UV-irradiated CsI ∶ Tl and CsI ∶ Pb crystals [J]. Radiat. Meas., 1998, 29 (3-4):333-335.[2] Babin V, Kalder K, Krasnikov A, et al. Luminescence and defects creation under photoexcitation of CsI ∶ Tl crystal in Tl+-ralated absorption bands [J]. J. Lumin., 2002, 96 (1):75-85.[3] Trefilova L N, Charkina T, Kudin A, et al. Radiation defects creation in CsI(Tl)crystals and their luminescence properties [J]. J. Lumin., 2003, 102-103 :543-550.[4] Trefilova L, Grinynov B, Alekseev V, et al. The reasons the scintillation efficiency decrease of CsI(Tl) crystals exposed by the high-dosed radiation [J]. Radiat. Meas., 2007, 42 (4-5):839-842.[5] Wu Z, Yang B, Townsend P D. Low temperature radioluminescence spectra of CsI ∶ Tl [J]. Nucl. Instr. & Meth. in Phys. Res. B, 2008, 266 (21):4757-4761.[6] Wu Zhenglong, Yang Bairui. Radioluminescence of crystalline CsI and CsI(Tl)with various X-ray tube voltages [J]. J. Synthetic Crystals (人工晶体学报), 2009, 38 (3):666-671 (in Chinese).[7] Kawai T, Ichimura N, Hashimoto S, et al. Origin of the absorption bands of cesium halides doped with Tl+ ions [J]. Phys. Stat. Sol. (b), 2001, 227 (2):587-594.[8] Nagirnyi V, Stolovich A, Zazubovich S, et al. Peculiarities of the triplet relaxed excited-state structure and luminescence of a CsI ∶ Tl crystal [J]. J. Phys.: Condens. Matter., 1995, 7 (18):3637-3653.[9] Valais I, Nikolopoulos D, Kalivas N, et al. A systematic study of the performance of the CsI ∶ Tl single-crystal scintillator under X-ray excitation [J]. Nucl. Instr. & Meth. in Phys. Res. A, 2007, 571 (1-2):343-345.[10] Zang Jingcun, Liu Yanhang. Reearch development of scintillators and fluorescence [J]. J. Synthetic Crystals (人工晶体学报), 2004, 33 (2):266-271 (in Chinese).
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