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1. 内蒙古工业大学 理学院物理系
2. 内蒙古大学 物理科学与技术学院
收稿:2009-12-14,
修回:2010-3-11,
网络首发:2010-11-22,
纸质出版:2010-11-22
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郭海峰, 哈斯花, 朱俊. 外电场下应变量子阱中电子与空穴的本征态[J]. 发光学报, 2010,31(6): 870-876
GUO Hai-feng, HA Si-hua, ZHU Jun. Eigen-states of Electron and Hole in Strained Quantum Well under External Electric Field[J]. Chinese Journal of Luminescence, 2010,31(6): 870-876
考虑自发与压电极化引起的内建电场
自由电子-空穴气屏蔽效应和外加电场
基于常微分数值计算
自洽求解电子与空穴的薛定谔方程和泊松方程以获得基态能级。以典型的GaN/Al
x
Ga
1-
x
N纤锌矿氮化物应变量子阱为例
通过数值求解
得到电子与空穴的本征基态能和相应本征波函数。计算结果表明:沿量子阱生长方向所施加的外加电场将抵消阱中内建电场的作用
阱结构的弯曲程度略显平缓
使电子(空穴)本征波函数逆(顺)着外电场方向移动
且均向阱中心移动
波峰峰值增加
隧穿几率减小;在固定外电场情况下
电子与空穴基态能级随阱宽的增加而减小
随掺杂组分的增加而增加
表明外加电场对内建电场有所削弱以及量子限制作用对电子(空穴)基态能有显著的影响。
paper
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