GaN基大功率白光LED的高温老化特性

周舟; 冯士维; 张光沉; 郭春生; 李静婉

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GaN基大功率白光LED的高温老化特性

器件制备及器件物理 | 更新时间：2020-08-12

- GaN基大功率白光LED的高温老化特性
- The Aging Characteristics of High-power GaN-based White Light-emitting Diodes
- 发光学报 2011年32卷第10期页码：1046-1050
- 作者机构：
  
  北京工业大学电子信息与控制工程学院
- 作者简介：
- 基金信息：
  
  北京市自然科学基金(4092005)();国家"();863"();计划(2009AA032704)();教育部博士点基金(20091103110006
- DOI：
  中图分类号： TN383.1
- 收稿：2011-06-24，
  
  修回：2011-7-20，
  
  网络首发：2011-10-22，
  
  纸质出版：2011-10-22
- 稿件说明：
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周舟, 冯士维, 张光沉, 郭春生, 李静婉. GaN基大功率白光LED的高温老化特性[J]. 发光学报, 2011,32(10): 1046-1050

ZHOU Zhou, FENG Shi-wei, ZHANG Guang-chen, GUO Chun-sheng, LI Jing-wan. The Aging Characteristics of High-power GaN-based White Light-emitting Diodes[J]. Chinese Journal of Luminescence, 2011,32(10): 1046-1050
周舟, 冯士维, 张光沉, 郭春生, 李静婉. GaN基大功率白光LED的高温老化特性[J]. 发光学报, 2011,32(10): 1046-1050 DOI：

ZHOU Zhou, FENG Shi-wei, ZHANG Guang-chen, GUO Chun-sheng, LI Jing-wan. The Aging Characteristics of High-power GaN-based White Light-emitting Diodes[J]. Chinese Journal of Luminescence, 2011,32(10): 1046-1050 DOI：

摘要

对大功率GaN基白光LED在85 ℃下进行了高温加速老化实验。经6 500 h的老化

样品光通量退化幅度为28%~33%。样品的

I-V

特性变化表明其串联电阻和反向漏电流不断增大

原因可归结为芯片欧姆接触的退化及芯片材料中缺陷密度的提高。样品的热特性变化显示出各结构层热阻均明显增大

这是由散热通道上各层材料的老化及焊料层出现大面积空洞引起的。分析表明

高温老化过程中芯片和封装材料的退化共同导致了LED的缓变失效。

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references

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