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1. 中国科学院研究生院 北京,100049
2. 中国科学院 激发态物理重点实验室 长春光学精密机械与物理研究所,吉林 长春,130033
3. 中国科学院 苏州生物医学工程技术研究所,江苏 苏州,215163
收稿日期:2011-04-02,
修回日期:2011-05-30,
网络出版日期:2011-10-22,
纸质出版日期:2011-10-22
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杨晔, 刘云, 张金龙, 李再金, 单肖楠, 王立军. 850 nm高亮度近衍射极限锥形半导体激光器[J]. 发光学报, 2011,32(10): 1064-1068
YANG Ye, LIU Yun, ZHANG Jin-long, LI Zai-jin, SHAN Xiao-nan, WANG Li-jun. Near Diffraction Limit High-brightness 850 nm Tapered Laser Diodes[J]. Chinese Journal of Luminescence, 2011,32(10): 1064-1068
制备了具有低红暴优势的850 nm大功率高亮度锥形半导体激光器
获得了近衍射极限的激光输出。当连续输出功率为200 mW时
光束质量因子M
2
仅为1.7
亮度高达16.3 MWcm
-2
sr
-1
;当功率提高到1 W时
M
2
因子和亮度仍分别达到2.8和9.9 MWcm
-2
sr
-1
。此外
研究了锥形激光器的功率、光谱、远场分布等特性
并分析了不同脊形波导长度对锥形激光器自聚焦现象的影响。
High-power high-brightness tapered laser diodes emitting at 850 nm have been manufactured
and the beam quality of near diffraction limit has been achieved. The beam propagation factor
M
2
is only 1.7 and the high brightness is up to 16.3 MWcm
-2
sr
-1
when the output power is 200 mW
and the values change to 2.8 and 9.9 MWcm
-2
sr
-1
under 1 W output. The electro-optical properties of tapered lasers are discussed. We have also studied the influence of tapered section length on output power. The results reported in this paper may become a step forward to new applications of tapered laser diodes.
Liang Xuemei, Lv Jinka, Cheng Liwen, et al. Structural design of vertical-external-cavity surface-emitting semiconductor laser with 920 nm [J]. Chin. J. Lumin. (发光学报), 2010, 31 (1):79-84 (in English).[2] Cheng Liwen, Liang Xuemei, Qin Li, et al. Theoretical analysis of key parameters of 980 nm optically pumped semiconductor vertical external cavity surface emitting laser [J]. Chin. J. Lumin. (发光学报), 2008, 29 (4):713-715 (in Chinese).[3] Liu Yun, Liao Xinsheng, Qin Li, et al. Oxygen-free copper microchannel heat sink of high power semiconductor laser [J]. Chin. J. Lumin. (发光学报), 2005, 26 (1):109-114 (in Chinese).[4] Zhu Liyan, Fu Xiuhua. The technical development of the 850 nm high-luminance semiconductor laser's film [J]. Journal of Changchun University of Science and Technology (长春理工大学学报), 2007, 30 (1):18-20 (in Chinese).[5] Qu Zhou, Liu Yang, Liu Bo. High power semiconductor laser and its applications in military [J]. OME Information (光机电信息), 2006(1):52-55 (in Chinese).[6] Dittmar F, Klehr A, Sumpf B, et al. 9 W output power from an 808 nm tapered diode laser in pulse mode operation with nearly diffraction-limited beam quality [J]. IEEE Quantum Electronics, 2007, 13 (5):1194-1199.[7] Kelemen M T, Weber J, Bihlmann G, et al. Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power [J]. Electronics Letters, 2005, 41 (18):1011-1013.[8] Hocker G B, Burns W K. Mode dispersion in diffused channel waveguides by the effective index method [J]. Applied Optics, 1977, 16 (1):113-118.[9] Burns W K, Milton A F, Lee A B. Optical waveguide parabolic coupling horns [J]. Appl. Phys. Lett., 1977, 30 (1):28-30.[10] Walpole J N, Kintzer E S, Chinn S R, et al. High-power strained-layer InGaAs/AlGaAs tapered traveling wave amplifier [J]. Appl. Phys. Lett., 1992, 61 (7):740-742.[11] Goldberg L, Surette M, Mehuys D. Filament formation in a tapered GaAlAs optical amplifier [J]. Appl. Phys. Lett.,1993, 62 (19):2304-2306.
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