氮等离子体辅助脉冲激光沉积生长 p型ZnO∶N薄膜的光学和电学性质

王雷; 徐海阳; 李兴华; 刘益春

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氮等离子体辅助脉冲激光沉积生长 p型ZnO∶N薄膜的光学和电学性质

材料合成及性能研究 | 更新时间：2020-08-12

- 氮等离子体辅助脉冲激光沉积生长 p型ZnO∶N薄膜的光学和电学性质
- Optical and Electrical Properties of p-type ZnO∶N Films Grown by N-plasma Assisted Pulsed Laser Deposition
- 发光学报 2011年32卷第10期页码：977-982
- 作者机构：
  
  东北师范大学先进光电子功能材料研究中心紫外光发射材料与技术教育部重点实验室,吉林长春,130024
- 作者简介：
- 基金信息：
  
  国家自然学基金(50725205/60907016)();吉林省青年学者科学基金(20080102)();东北师范大学培养基金(NENU-STC08001)资助项目()
- DOI：
  中图分类号： O472+.3;O472+.4
- 收稿日期：2011-04-02，
  
  修回日期：2011-05-22，
  
  网络出版日期：2011-10-22，
  
  纸质出版日期：2011-10-22
- 稿件说明：
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王雷, 徐海阳, 李兴华, 刘益春. 氮等离子体辅助脉冲激光沉积生长 p型ZnO∶N薄膜的光学和电学性质[J]. 发光学报, 2011,32(10): 977-982

WANG Lei, XU Hai-yang, LI Xing-hua, LIU Yi-chun. Optical and Electrical Properties of p-type ZnO∶N Films Grown by N-plasma Assisted Pulsed Laser Deposition[J]. Chinese Journal of Luminescence, 2011,32(10): 977-982
王雷, 徐海阳, 李兴华, 刘益春. 氮等离子体辅助脉冲激光沉积生长 p型ZnO∶N薄膜的光学和电学性质[J]. 发光学报, 2011,32(10): 977-982 DOI：

WANG Lei, XU Hai-yang, LI Xing-hua, LIU Yi-chun. Optical and Electrical Properties of p-type ZnO∶N Films Grown by N-plasma Assisted Pulsed Laser Deposition[J]. Chinese Journal of Luminescence, 2011,32(10): 977-982 DOI：

摘要

通过氮气等离子体辅助脉冲激光沉积(PLD)技术制备了氮掺杂氧化锌(ZnO∶N)薄膜。经过低温快速热退火(RTA)处理后

ZnO∶N薄膜呈现p型导电特性。利用X射线光电子能谱(XPS)、光致发光(PL)和霍尔测量对ZnO∶N薄膜中N的化学状态及其光学和电学性质进行了系列的研究。结果表明:所制得的p型ZnO∶N薄膜为高度补偿半导体;RTA工艺不仅可以激活薄膜中更多的N受主

还可以弱化由薄膜中的施主缺陷造成的自补偿效应。在低温PL光谱中观察到了3种与氮受主相关的光发射

并且通过自由电子-受主(FA)辐射复合光发射确定了薄膜中N受主的离化能(128 meV)。随着退火温度的升高

施主-受主对发射峰呈现了略微的红移现象

这可以通过势能波动模型加以理解。

Abstract

Nitrogen-doped ZnO (ZnO∶N) films were grown by N-plasma assisted pulsed laser deposition. The p-type conductivities were achieved by post low-temperature rapid thermal annealing (RTA). The N chemical states

optical and electrical properties of ZnO∶N films were systematically studied by X-ray photoelectron spectroscopy (XPS)

photoluminescence (PL) and Hall measurements. The results revealed that the obtained p-type ZnO∶N films are highly compensated semiconductor

and the RTA process can activate more N acceptors and reduce the self-compensation of intrinsic donor defects. Three N acceptor-related emissions were observed in low-temperature PL spectra. The ionization energy of N acceptor was determined as about 128 meV from free-electron-to-acceptor (FA) transition. Interestingly

donor-acceptor pair (DAP) emission showed a slight redshift with increasing annealing temperature. This phenomenon was understood in terms of a potential fluctuation model.

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references

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