p层厚度对Si基GaN垂直结构LED出光的影响

陶喜霞; 王立; 刘彦松; 王光绪; 江风益

doi:null

您当前的位置：

首页 >

文章列表页 >

p层厚度对Si基GaN垂直结构LED出光的影响

器件制备及器件物理 | 更新时间：2020-08-12

- p层厚度对Si基GaN垂直结构LED出光的影响
- Effects of The Thickness of p-type GaN on Light Extraction of GaN Based Vertical Light Emitting Diodes on Silicon Substrate
- 发光学报 2011年32卷第10期页码：1069-1073
- 作者机构：
  
  南昌大学国家硅基LED工程技术研究中心,江西南昌,330047
- 作者简介：
- 基金信息：
  
  国家自然科学基金(51072076, 61040060)();国家高技术研究发展"();863"();计划 (2009AA03A199)项目();教育部
- DOI：
  中图分类号： TN312+.8
- 纸质出版日期：2011-10-22，
  
  网络出版日期：2011-10-22，
  
  收稿日期：2011-6-28，
  
  修回日期：2011-8-3，
扫描看全文
陶喜霞, 王立, 刘彦松, 王光绪, 江风益. p层厚度对Si基GaN垂直结构LED出光的影响[J]. 发光学报, 2011,32(10): 1069-1073

TAO Xi-xia, WANG Li, LIU Yan-Song, WANG Guang-xu, JIANG Feng-yi. Effects of The Thickness of p-type GaN on Light Extraction of GaN Based Vertical Light Emitting Diodes on Silicon Substrate[J]. Chinese Journal of Luminescence, 2011,32(10): 1069-1073
陶喜霞, 王立, 刘彦松, 王光绪, 江风益. p层厚度对Si基GaN垂直结构LED出光的影响[J]. 发光学报, 2011,32(10): 1069-1073 DOI：

TAO Xi-xia, WANG Li, LIU Yan-Song, WANG Guang-xu, JIANG Feng-yi. Effects of The Thickness of p-type GaN on Light Extraction of GaN Based Vertical Light Emitting Diodes on Silicon Substrate[J]. Chinese Journal of Luminescence, 2011,32(10): 1069-1073 DOI：

摘要

利用金属有机化学气相沉积(MOCVD)法在Si衬底上生长了一系列具有不同p层厚度

的InGaN/GaN蓝光LED薄膜并制备成垂直结构发光二极管(VLEDs)

研究了p层厚度即p面金属反射镜与量子阱层的间距对LED出光效率的影响

并采用F-P干涉模型进行了理论分析。结果显示

光提取效率受

影响很大

随

的增加呈现类似阻尼振动的变化趋势

分别在0.73

处和 1.01

处取得第一个极大值和极小值

且前者是后者两倍多。因此优化p层厚度可以有效提高LED的出光效率。

Abstract

The relationship between the thickness

of p-type GaN and light extraction efficiency of GaN based vertical light emitting diodes (VLEDs) was described in this work. The VLEDs were grown on silicon by metal organic chemical vapour deposition (MOCVD). A series of VLEDs were fabricated with varied thickness of p-type GaN. It showed that the thickness

was in the order of wavelength and it had a significant influence on extraction efficiency due to interferences. The maximum in extraction efficiency was two times more than the neighboring minimum

which were located at 0.73

and 1.01

respectively. Therefore

the extraction efficiency of VLEDs can be enhanced by optimizing the thickness of p-type GaN.

关键词

LEDGaN垂直结构出光p层厚度

Keywords

LEDGaNvertical structurelight extractionthickness of p-type GaN

references

Guo X, Schubert E F. Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates [J]. Appl. Phys. Lett., 2001, 78 (21):3337-3339.[2] Xiong C B, Jiang F Y, Fang W Q, et al. Different properties of GaN-based LED grown on Si(111) and transferred onto new substrate [J]. Sci. China, Ser. E., 2006, 49 (3):313-321.[3] Xiong C, Jiang F, Fang W, et al. The characteristics of GaN-based blue LED on Si substrate [J]. J. Lumin., 2007, 122-123 :185-187.[4] Xiao Y P, Mo C L, Qiu C, et al. The aging characteristics of GaN-based blue LED on Si substrate [J]. Chin. J. Lumin. (发光学报), 2010, 31 (3):364-368 (in Chinese).[5] Shchekin O B, Epler J E, Trottier T A, et al. High performance thin-film flip-chip InGaN-GaN light-emitting diodes [J]. Appl. Phys. Lett., 2006, 89 (7):071109-1-3.[6] Xiong Y J, Zhang M, Xiong C B, et al. Investigation of strain of GaN light-emitting diode films transferred to metal substrate from Si (111) [J]. Chin. J. Lumin. (发光学报), 2010, 31 (4):531-537 (in Chinese).[7] Chen W H, Kang X N, Hu X D, et al. Study of the structural damage in the (0001) GaN epilayer processed by laser lift-off techniques [J]. Appl. Phys. Lett., 2007, 91 (12):121114-1-3.[8] Qiu H, Liu J L, Wang L, et al. Effects of SiON passivation layer on reliability of GaN based green LED on silicon substrate [J]. Chin. J. Lumin. (发光学报), 2011, 32 (6) 603-607 (in Chinese).[9] Mo C L, Fang W Q, Pu Y, et al. Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD [J]. J. Cryst. Growth, 2005, 285 (3):312-317.[10] Schubert E F. Light-Emitting Diodes [M]. New York: Cambridge University Press, 2006:78.[11] Benisty H, De Neve H, Weisbuch C. Impact of planar microcavity effects on light extraction-Part I: Basic concepts and analytical trends [J]. IEEE J. Quantum Elect., 1998, 34 (9):1612-1631.[12] Bennett J M. Precise method for measuring the absolute phase change on reflection [J]. J. Opt. Soc. Am., 1964, 54 (5):612-622.[13] Krames M R, Shchekin O B, Mueller-Mach R, et al. Status and future of high-power light-emitting diodes for solid-state lighting [J]. J. Disp. Technol., 2007, 3 (2):160-175.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

垒温对硅衬底GaN基蓝光LED发光效率的影响

高温预生长对图形化蓝宝石衬底GaN薄膜质量的提高

衬底弯曲度对GaN基LED芯片性能的影响

SiON钝化膜对硅衬底氮化镓绿光LED可靠性的影响

三价铋离子掺杂发光材料研究进展