表面化学处理和退火对p-GaN/ZnO:Ga接触特性的影响

王书方; 李喜峰; 张建华

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表面化学处理和退火对p-GaN/ZnO:Ga接触特性的影响

论文 | 更新时间：2020-08-12

- 表面化学处理和退火对p-GaN/ZnO:Ga接触特性的影响
- Effects of Surface Chemical Treatment and Annealing on p-GaN/ZnO:Ga Contact
- 发光学报 2010年31卷第6期页码：848-853
- 作者机构：
  
  1. 上海大学新型显示及应用集成教育部重点实验室
  2. 上海大学机电工程与自动化学院
- 作者简介：
- 基金信息：
  
  国家自然科学基金(51072111)();上海市科委发展基金(08DZ1140603,08QH14007)();教育部新世纪优秀人才支持计划(NCET-07-0535)
- DOI：
  中图分类号： O484;TN301
- 收稿：2009-12-21，
  
  修回：2010-6-7，
  
  网络首发：2010-11-22，
  
  纸质出版：2010-11-22
- 稿件说明：
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王书方, 李喜峰, 张建华. 表面化学处理和退火对p-GaN/ZnO:Ga接触特性的影响[J]. 发光学报, 2010,31(6): 848-853

WANG Shu-fang, LI Xi-feng, ZHANG Jian-hua. Effects of Surface Chemical Treatment and Annealing on p-GaN/ZnO:Ga Contact[J]. Chinese Journal of Luminescence, 2010,31(6): 848-853
王书方, 李喜峰, 张建华. 表面化学处理和退火对p-GaN/ZnO:Ga接触特性的影响[J]. 发光学报, 2010,31(6): 848-853 DOI：

WANG Shu-fang, LI Xi-feng, ZHANG Jian-hua. Effects of Surface Chemical Treatment and Annealing on p-GaN/ZnO:Ga Contact[J]. Chinese Journal of Luminescence, 2010,31(6): 848-853 DOI：

摘要

ZnO:Ga(GZO)透明电极沉积在p-GaN表面

用作透明电流扩展层。直接沉积在p-GaN上的p-GaN/GZO存在较大的势垒

容易形成肖特基接触

而良好的欧姆接触对功率LED器件至关重要。为了降低接触势垒

采用盐酸和氢氧化钠溶液对GaN表面进行去氧化层处理

并对p-GaN/GZO进行退火处理

研究表面处理和退火对p-GaN/GZO接触特性的影响。研究表明:碱性溶液处理有利于降低接触势垒;退火处理后

接触势垒略有增加。

Abstract

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references

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