浏览全部资源
扫码关注微信
1. 天津城市建设学院 天津,300384
2. 弱光非线性光子学教育部重点实验室 南开大学 泰达应用物理学院 天津,300475
收稿日期:2009-11-09,
修回日期:1900-01-02,
网络出版日期:2010-06-30,
纸质出版日期:2010-06-30
移动端阅览
贾国治, 姚江宏, 何进密, 等. 结构和磁场对三势垒结构中共振隧穿时间的影响[J]. 发光学报, 2010,31(3):341-347.
JIA Guo-zhi, YAO Jiang-hong, HE Jin-mi, et al. The Effect of Structure and Magnetic Field on Resonant Tunneling Time in Triple-barrier Structures[J]. Chinese journal of luminescence, 2010, 31(3): 341-347.
为了理解在三势垒结构中准束缚能级
E
z
和隧穿寿命对磁场的依赖性
采用传输矩阵的方法研究了在三势垒结构中的共振隧穿过程。分别研究了在三势垒结构中的透射几率特征和隧穿寿命。结果表明:随着中间势垒厚度L的增加
第一准束缚能级E
1z
增加
而第二准束缚能级E
2z
却减小。随着磁场强度B和朗道量子数n的增加
与第一和第二准束缚能级(E
1z
E
2z
)对应的寿命τ缩短。对于B=15 和 n=15的情况
L对τ的影响很小。
To understand the dependence of the quasi-bound level energies
E
z
and the tunneling lifetime on the magnetic fields
B
resonant tunneling in the triple-barrier structure was investigated by using the transfer matrix method. Transmission probability characteristics and the tunneling lifetime in the triple-barrier structure are investigated
respectively. The results showed that the first quasi-bound energy levels
E
1z
increase
while the second quasi-bound energy levels
E
2z
decrease with the increasing of the middle barrier thickness
L
. The lifetime
τ
of
E
1z
and
E
2z
is shor-tened with increasing of
B
and Landau quantum number
n
and the effect of
L
on
τ
is weak for
B
=15 and
n
=15.
. Regan B C, Aloni S, Jensen K, et al. Surface-tension-driven nanoelectromechanical relaxation oscillator [J]. Appl. Phys. Lett., 2005, 86 (12):123119-1-3.
. Mi Z, Bhattacharya P, Fathpour S. High-speed 1.3 μm tunnel injection quantum-dot lasers [J]. Appl. Phys. Lett., 2005, 86 (15):153109-1-3.
. Tsu R, Esaki L. Tunneling in a finite superlattice [J]. Appl. Phys. Lett., 1973, 22 :562-565.
. Tsuchiya M, Matsusue T, Sakaki H. Tunneling escape rate of electrons from quantum well in double-barrier heterostructures [J]. Phys. Rev. Lett., 1987, 59 (20):2356-2359.
. Arsenault C J, Meunier M. Resonant-tunneling lifetime comparison between double-barrier and δ-doped barrier structures [J]. Phys. Rev. B, 1989, 39 (12):8739-8742.
. Zou Nanzhi, Rammer J, Chao K A. Tunneling escape of electrons from a double-barrier structure [J]. Phys. Rev. B, 1992, 46 (24):15912-15921.
. Peng Jianping, Mu Yaoming, Shen Xuechu. Resonant level lifetime in the double-barrier structure for both quasi-bound and extended states [J]. J. Appl. Phys., 1993, 73 (2):989-991.
. Huaizhe X, Meifang Z, Boyuan H. Analytical expressions for resonant-tunneling lifetime in symmetrical double-barrier structures [J]. Phys. Lett. A, 1996, 223 (4):227-231.
. Fisher D J, Zhang C. Electron tunneling lifetime of a quasibound state in a double-barrier resonant tunneling structure [J]. J. Appl. Phys.,1994, 76 (1):606-608.
. Guo Yong, Gu Binglin, Yu Jingzhi, et al. Resonant tunneling in step-barrier structures under an applied electric field [J]. J. Appl. Phys., 1998, 84 (2):918-924.
. Gong J, Liang X X , Ban S L. Tunneling time of electronic wave packet through a parabolic quantum well with double barrier [J]. Phys. Status Solidi (b), 2007, 244 (6):2064-2071.
. Wang Hongmei, Zhang Yafei, Xu Huaizhe. The effect of transverse wave vector and magnetic fields on resonant tunneling times in double-barrier structures [J]. J. Appl. Phys., 2007, 101 (2):023712-1-5.
. Jia Guozhi, Yao Jianghong, Shu Yongchun, et al. Quantum rings formed in InAs QDs annealing process [J]. Appl. Surf. Sci., 2009, 255 (8):4452-4455.
. Li Chunlei, Yang Fuhua, Feng Songlin, et al. Transmission properties of electron in quantum rings [J]. J. Appl. Phys., 2008, 103 (6):063723-1-5.
. Wang Xuehua, Gu Benyuan, Yang Guozhen. Coupling between normal and lateral degrees off reedom of an electron in quantum wells and superlattices at zero and finite magnetic fields [J]. Phys. Rev. B, 1997, 56 (15):9224-9227.
. Xu D X, Shen G D, Willander M, et al. The properties of resonant transmission in triple-barrier/double-quantum-well heterostructures [J]. J. Appl. Phys., 1992, 71 (8):3859-3864.
0
浏览量
167
下载量
0
CSCD
关联资源
相关文章
相关作者
相关机构