Si衬底GaN基蓝光LED老化性能

肖友鹏; 莫春兰; 邱 冲; 江风益

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Si衬底GaN基蓝光LED老化性能

论文 | 更新时间：2020-08-12

- Si衬底GaN基蓝光LED老化性能
- The Aging Characteristics of GaN-based Blue LED on Si Substrate
- 发光学报 2010年31卷第3期页码：364-368
- 作者机构：
  
  1. 南昌大学教育部发光材料与器件工程研究中心,江西南昌,330047
  2. 晶能光电(江西)有限公司,江西南昌,330096
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN383.1;O482.31
- 收稿日期：2009-10-09，
  
  修回日期：1900-01-02，
  
  网络出版日期：2010-06-30，
  
  纸质出版日期：2010-06-30
- 稿件说明：
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肖友鹏, 莫春兰, 邱冲, 等. Si衬底GaN基蓝光LED老化性能[J]. 发光学报, 2010,31(3):364-368.

XIAO You-peng, MO Chun-lan, QIU Chong, et al. The Aging Characteristics of GaN-based Blue LED on Si Substrate[J]. Chinese journal of luminescence, 2010, 31(3): 364-368.
肖友鹏, 莫春兰, 邱冲, 等. Si衬底GaN基蓝光LED老化性能[J]. 发光学报, 2010,31(3):364-368. DOI：

XIAO You-peng, MO Chun-lan, QIU Chong, et al. The Aging Characteristics of GaN-based Blue LED on Si Substrate[J]. Chinese journal of luminescence, 2010, 31(3): 364-368. DOI：

摘要

报道了芯片尺寸为500 μm×500 μm 硅衬底GaN基蓝光LED在常温下经1 000 h加速老化后的电学和发光性能

其光功率随老化时间的变化分先升后降两个阶段;老化后的反向漏电流和正向小电压下的电流均有明显的增加;老化后器件的外量子效率(EQE)比老化前低;老化前后EQE衰减幅度在不同的注入电流下存在明显差异

衰减幅度最小处出现在发光效率最高时对应的电流密度区间。

Abstract

The electrical and optical aging characteristics of GaN-based light-emitting diodes on Si substrate were studied. The LED samples were stressed at room temperature with an injection current of 200 mA. Light-output power increases in the first stage and decreases with aging time. The current-voltage characteristics were also analyzed. Reverse current and forward current at low bias were increased significantly. The external quantum efficiency (EQE) of device after aging is lower than the pre-aging one. The EQE attenuation before and after aging are significantly different at different injection currents. The smallest attenuation occurs in the current density range corresponding to the highest efficiency.

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references

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