. Nakarmi M L, Nepal N, Lin J Y, et al. Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys [J]. Appl. Phys. Lett., 2009, 94 (9):091903-1-4.

. Zhang F, Yang W F, Huang H L, et al. High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3/SiO2 films [J]. Appl. Phys. Lett., 2008, 92 (25):251102-1-3.

. Yadav H K, Sreenivas K, Gupta V. Enhanced response from metal/ZnO bilayer ultraviolet photodetector [J]. Appl. Phys. Lett., 2007, 90 (17):172113-1-4.

. Wang L J, Giles N C. Temperature dependence of the free-exciton transition energy in zinc oxide by photoluminescence excitation spectroscopy [J]. J. Appl. Phys., 2003, 94 (2):973-978.

. Klingshirn C. The luminescence of ZnO under high one- and two-quantum excitation [J]. Phys. Status Solidi (b), 1975, 71 (2):547-559.

. Jeong S H, Kim J K, Lee B T. Effects of growth conditions on the emission properties of ZnO films prepared on Si(100) by rf magnetron sputtering [J]. J. Phys. D: Appl. Phys., 2003, 36 (16):2017-2020.

. Singh R G, Singh F, Agarwal V et al. Photoluminescence studies of ZnO/porous silicon nanocomposites [J]. J. Phys. D: Appl. Phys., 2007, 40 (10):3090-3093.

. Li Xiangping, Zhang Baolin, Dong Xin, et al. Study on the properties of ZnO films prepared by photo-assisted MOCVD [J]. Chin. J. Lumin. (发光学报), 2008, 29 (1):139-143 (in Chinese).

. Weng Zhankun, Liu Aimin, Liu Yanhong, et al. Photoluminescence and formation of ZnO thin films on n-InP(100) by electrodeposition [J]. Chin. J. Lumin. (发光学报), 2008, 29 (2):283-288 (in English).

. Li Aixia, Bi Hong, Liu Yanmei, et al. Structure and optical properties of (Cu, Co)-codoped ZnO thin films [J]. Chin. J. Lumin. (发光学报), 2008, 29 (2):289-293 (in Chinese).

. Ren Mingfang, Wang Hua, Xu Jiwen, et al. Influence of doping content and spattered by DC magnetron sputtering at room temperature [J]. Chin. Liq. Cryst. Displ. (液晶与显示), 2009, 24 (1):52-56 (in Chinese).

. Shelke V, Sonawane B K, Bhole M P, et al. Effect of annealing temperature on the optical and electrical properties of aluminum doped ZnO films [J]. J. Non-Crys. Soli., 2009, 355 (14-15):840-843.

. Bacaksiz E, Yilmaz S, Parlak M, et al. Effects of annealing temperature on the structural and optical properties of ZnO hexagonal pyramids [J]. J. Allo. Comp., 2009, 478 (1-2):367-370.

. Craciun V, Howard J M, Craciun D, et al. Oxygen trapping during pulsed laser deposition of oxide films [J]. Appl. Surf. Sci., 2004, 208-209 :507-511.

. Chen M, Pei Z L, Sun C, et al. Formation of Al-doped ZnO films by de magnetron reactive sputtering [J]. Mater. Lett., 2001, 48 (3-4):194-198.

. Oba F, Nishitani S R, Isotani S, et al. Energetics of native defects in ZnO [J]. J. Appl. Phys., 2001, 90 (2):824-828.

. Look D C, Hemsky J W, Sizelove J R. Residual native shallow donor in ZnO [J]. Phys. Rev. Lett., 1999, 82 (12):2552-2555.

. Xu X Q, Lin B X, Sun L J, et al. Effect of Zn doping on ultraviolet emission of ZnO crystals [J]. J. Phys. D: Appl. Phys., 2009, 42 (8):085102-1-4.

. Lin B X, Fu Z X, Jia Y B. Green luminescent center in undoped zinc oxide films deposited on silicon substrates [J]. Appl. Phys. Lett., 2001, 79 (7):943-945.