氮气氛中高温退火对ZnO薄膜发光性质的影响

钟 泽; 孙利杰; 徐小秋; 陈小庆; 邬小鹏; 傅竹西

doi:null

您当前的位置：

首页 >

文章列表页 >

氮气氛中高温退火对ZnO薄膜发光性质的影响

论文 | 更新时间：2020-08-12

- 氮气氛中高温退火对ZnO薄膜发光性质的影响
- Effect of High Temperature Annealing in Nitrogen on the Luminescence Property of ZnO Films
- 发光学报 2010年31卷第3期页码：359-363
- 作者机构：
  
  中国科学技术大学物理系
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O482.31
- 收稿日期：2009-01-25，
  
  修回日期：1900-01-02，
  
  网络出版日期：2010-06-30，
  
  纸质出版日期：2010-06-30
- 稿件说明：
移动端阅览
钟泽, 孙利杰, 徐小秋, 等. 氮气氛中高温退火对ZnO薄膜发光性质的影响[J]. 发光学报, 2010,31(3):359-363.

ZHONG Ze, SUN Li-jie, XU Xiao-qiu, et al. Effect of High Temperature Annealing in Nitrogen on the Luminescence Property of ZnO Films[J]. Chinese journal of luminescence, 2010, 31(3): 359-363.
钟泽, 孙利杰, 徐小秋, 等. 氮气氛中高温退火对ZnO薄膜发光性质的影响[J]. 发光学报, 2010,31(3):359-363. DOI：

ZHONG Ze, SUN Li-jie, XU Xiao-qiu, et al. Effect of High Temperature Annealing in Nitrogen on the Luminescence Property of ZnO Films[J]. Chinese journal of luminescence, 2010, 31(3): 359-363. DOI：

摘要

以二乙基锌和水汽分别作为锌源和氧源

用LP-MOCVD方法在p型Si(100)衬底上生长了单一取向的ZnO薄膜。对得到的样品在氮气气氛中进行高温热处理

退火温度分别为900

1 000

1 100 ℃。利用室温PL谱、XRD、AFM、XPS等方法对样品的性质进行了研究。研究表明:(1)随着退火温度的升高

样品的结晶性质也逐渐提高

从表面形貌观察到晶粒尺寸逐渐增大;(2)当退火温度从900 ℃升高至1 000 ℃时

样品的光致发光谱中可见光波段的发光强度有所减弱

而紫外波段的发光强度明显增强;当退火温度升高至1 100 ℃时

可见光波段的发光几乎完全被抑制

而紫外波段的发光强度急剧增强。分析认为

高温退火改善晶体结晶质量的同时调制了样品的Zn/O比

氮气气氛下的热处理使得样品内的氧原子逸出

来自受主缺陷O

的可见发射随温度升高逐渐减弱

而当退火温度达到1 000 ℃以上时样品成为富锌状态

此时与施主缺陷Zn

有关的紫外发射急剧增强。

Abstract

ZnO film was deposited on p-type Si(100) substrate by an LP-MOCVD system using DEZ and H

O as zinc and oxygen sources

respectively. The film was cut into pieces and annealed in nitrogen at 900

1 000

1 100 ℃

respectively. The XRD

AFM

XPS

I-V

and PL properties were investigated. The results indicated that: (1)The crystalline quality of the samples are improved by the raising of annealing temperature

the size of crystal grains is increased; (2)When the annealing temperature increases from 900 ℃ to 1 000 ℃

inten-sity of the UV emission of the samples is enhanced while the emission in visible region declined; When the annealing temperature raises up to 1 100 ℃

the visible emission was suppressed completely and the UV emission is enhanced greatly. These results suggested that annealing at high temperature does not only improve the crystal quality of ZnO films but also controls the Zn/O composition ratio of the samples. A high temperature and nitride environment makes the O atoms escape from the films

the concentration of O

acceptors decreases

so that the visible emission decline. When the annealing temperature gets higher than 1 000 ℃

the samples are in the Zn-rich state. The UV emission related to the Zn

donors is enhanced obviously.

关键词

Keywords

references

. Nakarmi M L, Nepal N, Lin J Y, et al. Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys [J]. Appl. Phys. Lett., 2009, 94 (9):091903-1-4.

. Zhang F, Yang W F, Huang H L, et al. High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3/SiO2 films [J]. Appl. Phys. Lett., 2008, 92 (25):251102-1-3.

. Yadav H K, Sreenivas K, Gupta V. Enhanced response from metal/ZnO bilayer ultraviolet photodetector [J]. Appl. Phys. Lett., 2007, 90 (17):172113-1-4.

. Wang L J, Giles N C. Temperature dependence of the free-exciton transition energy in zinc oxide by photoluminescence excitation spectroscopy [J]. J. Appl. Phys., 2003, 94 (2):973-978.

. Klingshirn C. The luminescence of ZnO under high one- and two-quantum excitation [J]. Phys. Status Solidi (b), 1975, 71 (2):547-559.

. Jeong S H, Kim J K, Lee B T. Effects of growth conditions on the emission properties of ZnO films prepared on Si(100) by rf magnetron sputtering [J]. J. Phys. D: Appl. Phys., 2003, 36 (16):2017-2020.

. Singh R G, Singh F, Agarwal V et al. Photoluminescence studies of ZnO/porous silicon nanocomposites [J]. J. Phys. D: Appl. Phys., 2007, 40 (10):3090-3093.

. Li Xiangping, Zhang Baolin, Dong Xin, et al. Study on the properties of ZnO films prepared by photo-assisted MOCVD [J]. Chin. J. Lumin. (发光学报), 2008, 29 (1):139-143 (in Chinese).

. Weng Zhankun, Liu Aimin, Liu Yanhong, et al. Photoluminescence and formation of ZnO thin films on n-InP(100) by electrodeposition [J]. Chin. J. Lumin. (发光学报), 2008, 29 (2):283-288 (in English).

. Li Aixia, Bi Hong, Liu Yanmei, et al. Structure and optical properties of (Cu, Co)-codoped ZnO thin films [J]. Chin. J. Lumin. (发光学报), 2008, 29 (2):289-293 (in Chinese).

. Ren Mingfang, Wang Hua, Xu Jiwen, et al. Influence of doping content and spattered by DC magnetron sputtering at room temperature [J]. Chin. Liq. Cryst. Displ. (液晶与显示), 2009, 24 (1):52-56 (in Chinese).

. Shelke V, Sonawane B K, Bhole M P, et al. Effect of annealing temperature on the optical and electrical properties of aluminum doped ZnO films [J]. J. Non-Crys. Soli., 2009, 355 (14-15):840-843.

. Bacaksiz E, Yilmaz S, Parlak M, et al. Effects of annealing temperature on the structural and optical properties of ZnO hexagonal pyramids [J]. J. Allo. Comp., 2009, 478 (1-2):367-370.

. Craciun V, Howard J M, Craciun D, et al. Oxygen trapping during pulsed laser deposition of oxide films [J]. Appl. Surf. Sci., 2004, 208-209 :507-511.

. Chen M, Pei Z L, Sun C, et al. Formation of Al-doped ZnO films by de magnetron reactive sputtering [J]. Mater. Lett., 2001, 48 (3-4):194-198.

. Oba F, Nishitani S R, Isotani S, et al. Energetics of native defects in ZnO [J]. J. Appl. Phys., 2001, 90 (2):824-828.

. Look D C, Hemsky J W, Sizelove J R. Residual native shallow donor in ZnO [J]. Phys. Rev. Lett., 1999, 82 (12):2552-2555.

. Xu X Q, Lin B X, Sun L J, et al. Effect of Zn doping on ultraviolet emission of ZnO crystals [J]. J. Phys. D: Appl. Phys., 2009, 42 (8):085102-1-4.

. Lin B X, Fu Z X, Jia Y B. Green luminescent center in undoped zinc oxide films deposited on silicon substrates [J]. Appl. Phys. Lett., 2001, 79 (7):943-945.

浏览量

226

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

ZnO：V薄膜后退火处理前后的微结构与发光特性

一步溶液法制备ZnO亚微米晶体棒及其发光性能

Zn,Cu共掺杂的TiO₂:SnO₂薄膜的制备及性能研究

纳米结构ZnO薄膜的制备及其疏水特性

MOCVD法生长Ga、P掺杂的ZnO薄膜