Ca2+掺杂对BaMgSiO4 ∶ Eu2+发光材料发光性能的影响

杨创涛; 陈清清; 孟建新; 刘应亮

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Ca²⁺掺杂对BaMgSiO₄ ∶ Eu²⁺发光材料发光性能的影响

论文 | 更新时间：2020-08-12

- Ca²⁺掺杂对BaMgSiO₄ ∶ Eu²⁺发光材料发光性能的影响
- Effect of Ca²⁺ Doping on Luminescence Properties of BaMgSiO₄ ∶ Eu²⁺ Phosphor
- 发光学报 2010年31卷第3期页码：316-320
- 作者机构：
  
  1. 暨南大学纳米化学研究所
  2. 暨南大学化学系
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O482.31
- 收稿：2009-06-04，
  
  修回：1900-1-2，
  
  网络首发：2010-06-30，
  
  纸质出版：2010-06-30
- 稿件说明：
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杨创涛;陈清清;孟建新;刘应亮. Ca2+掺杂对BaMgSiO4 ∶ Eu2+发光材料发光性能的影响[J]. 发光学报, 2010,31(3): 316-320

YANG Chuang-tao;CHEN Qing-qing;MENG Jian-xin;LIU Ying-liang. Effect of Ca2+ Doping on Luminescence Properties of BaMgSiO4 ∶ Eu2+ Phosphor[J]. 发光学报, 2010,31(3): 316-320
杨创涛;陈清清;孟建新;刘应亮. Ca2+掺杂对BaMgSiO4 ∶ Eu2+发光材料发光性能的影响[J]. 发光学报, 2010,31(3): 316-320 DOI：

YANG Chuang-tao;CHEN Qing-qing;MENG Jian-xin;LIU Ying-liang. Effect of Ca2+ Doping on Luminescence Properties of BaMgSiO4 ∶ Eu2+ Phosphor[J]. 发光学报, 2010,31(3): 316-320 DOI：

摘要

采用高温固相法于弱还原气氛中制备了Ba

MgSiO

∶ Eu

(

le;0.15)发光材料

测量其光谱特性

分析Ca

掺杂对该发光材料光谱的影响。XRD图谱研究表明:Ca

在BaMgSiO

基质中极限溶解度

=0.075。发光性能研究表明

当Ca

掺入量从0增加至0.05时

最强发射峰从498 nm蓝移至450 nm

在掺入量为0.075时

激发和发射强度达到最强

而随着Ca

掺入量的增加激发光谱的形状也发生变化。从Ca

取代不同点阵位的Ba

并结合晶体场强度的变化讨论了光谱变化的原因。

Abstract

paper

关键词

Keywords

references

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