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1. 河北师范大学 化学与材料科学学院,河北 石家庄,050016
2. 河北化工医药职业技术学院 化学与环境工程系,河北 石家庄,050026
3. 清华大学 材料科学与工程系 北京,100084
收稿日期:2009-01-25,
修回日期:1900-01-02,
网络出版日期:2010-06-30,
纸质出版日期:2010-06-30
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席翠省;高元哲;王 萍;石士考;王瑞芬;周 济. 白光LED用红色发光粉 LiGd(MoO<sub>4</sub>)<sub>2</sub> : Eu<sup>3+</sup>的制备和发光特性[J]. 发光学报, 2010,31(3): 311-315
XI Cui-sheng;GAO Yuan-zhe;WANG Ping;SHI Shi-kao;WANG Rui-fen;ZHOU Ji. Synthesis and Luminescent Properties of LiGd(MoO<sub>4</sub>)<sub>2</sub> : Eu<sup>3+</sup> Red Phosphors for White LEDs[J]. 发光学报, 2010,31(3): 311-315
席翠省;高元哲;王 萍;石士考;王瑞芬;周 济. 白光LED用红色发光粉 LiGd(MoO<sub>4</sub>)<sub>2</sub> : Eu<sup>3+</sup>的制备和发光特性[J]. 发光学报, 2010,31(3): 311-315 DOI:
XI Cui-sheng;GAO Yuan-zhe;WANG Ping;SHI Shi-kao;WANG Rui-fen;ZHOU Ji. Synthesis and Luminescent Properties of LiGd(MoO<sub>4</sub>)<sub>2</sub> : Eu<sup>3+</sup> Red Phosphors for White LEDs[J]. 发光学报, 2010,31(3): 311-315 DOI:
采用高温固相法制备了LiGd
1-
x
Eu
<
em
>
x(MoO
4
)
2
钼酸盐红色发光粉
利用XRD和发光光谱技术对粉体进行了性能表征。结果表明:该系列发光粉均为四方晶系的白钨矿结构
能够被近紫外光(395 nm)有效激发
产生Eu
3+
的
5
D
0
7
F
2
特征跃迁红光发射(616 nm)。
x
=0.4时
即LiGd
0.6
Eu
0.4
(MoO
4
)
2
样品的发光强度超过商用红粉Y
2
O
2
S ∶ Eu
3+
发光强度的5倍
虽然比未加入Gd样品 LiEu(MoO
4
)
2
的发光强度略低
但LiGd
0.6
Eu
0.4
- (MoO
4
)
2
样品的组分中却减少了60%的Eu用量
明显降低了原料成本
更具实用价值
有希望成为白光发光二极管的红色发光材料。
A series of novel red light-emitting phosphors LiGd
1-
x
Eu
<
em
>
x(MoO
4
)
2
were synthesized by solid-state reaction at high temperature. Their structure and luminescent properties were investigated in detail. The XRD patterns showed that all the phosphors are isostructural and share a tetragonal scheelite structure of space group
I
4
1
/
a
88. In the emission spectra of the phosphors
the predominant transition emission is
5
D
0
7
F
2
(616 nm) of Eu
3+
whereas the other emissions are very weak. The excitation spectra are composed of ligand-to-metal charge transfer bands (CTB) of Mo
6+
-O
2-
as well as a few excitation transitions of Eu
3+
between 4f levels. The LiGd
0.6
Eu
0.4
(MoO
4
)
2
phosphor shows very strong emission intensity in comparison with commercial phosphor Y
2
O
2
S ∶ Eu
3+
. Although the fluorescence intensity of LiGd
0.6
Eu
0.4
(MoO
4
)
2
is slightly lower than that of the LiEu(MoO
4
)
2
the content over 60% Eu
3+
is saved. Therefore
the LiGd
0.6
Eu
0.4
(MoO
4
)
2
phosphor significantly reduces the cost of raw materials. It might be a potential candidate for white LED application.
. Narukawa Y, Narita J, Sakamoto T, et al. Recent progress of high efficiency white LEDs [J]. Phys. Status Solidi (a), 2007, 204 (6):2087-2093.
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. Yan S X, Zhang J H, Zhang Xia, et al. Enhanced red emission in CaMoO4 ∶ Bi3+,Eu3+ [J]. J. Phys. Chem. C, 2007, 111 (35):13256-13260.
. Wang Z L, Liang H B, Wang J, et al. Red-light-emitting diodes fabricated by near-ultraviolet InGaN chips with molybdate phosphors [J]. Appl. Phys. Lett., 2006, 89 (7):071921-1-3.
. Wang T, Jin Y J, Zhu Y H, et al. Progress of the research on tungstate and molybdate red phosphor for white LEDs [J]. China Light & Lighting (中国照明电器), 2008, (2):16-20,15 (in Chinese).
. Shi S K, Liu X R, Gao J, et al. Spectroscopic properties and intense red-light emission of (Ca, Eu, M)WO4(M=Mg, Zn, Li) [J]. Spectrochim. Acta, Part A, 2008, 69 (2):396-399.
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. Chiu C H, Liu C H, Huang S B, et al. White-light-emitting diodes using red-emitting LiEu(WO4)2-x(MoO4)<em>x phosphor [J]. J. Electrochem. Soc., 2007, 154 (7):J181-J184.
. Liao Yong, Zhu Wei, Li Xueming, et al. Preparation of Li(2-x)(MoO4)2 ∶ Eu<em>x phosphors by sol-gol process and their cha-racterization [J]. Materials Review (材料导报), 2007, 21 (z1):321-324 (in Chinese).
. Xie A, Yuan Y M, Wang J J, et al. Preparation and luminescent properties of LiEu1-xY<em>x(WO4)0.5(MoO4)1.5 for white LEDs [J]. Science in China (中国科学), 2009, 36 (6):1063-1068 (in Chinese).
. Wang Jiaguo, Jing Xiping, Yan Chunhua, et al. Influence of fluoride on f-f transitions of Eu3+ in LiEuM2O8(M=Mo,W) [J]. J. Lumin., 2006, 121 (1):57-61.
. Holland T J B, Redfern S A T. Unit cell refinement from powder diffraction data: the use of regression diagnostics [J]. Mineral Mag., 1997, 61 (1):65-77.
. Shi S K, Gao J, Zhou J. Promising red phosphors (Ca,Eu,M)(WO4)1-z(MoO4)<em>z(M=Mg,Zn) for solid-state lighting [J]. J. Electrochem. Soc., 2008, 155 (7):H525-H528.
. Wang Z L, Liang H B, Wang J, et al. Red-light-emitting diodes fabricated by near-ultraviolet InGaN chips with molybdate phosphor [J]. Appl. Phys. Lett., 2006, 89 (7):071921-1-3.
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