氧气流量对脉冲激光沉积ZnO薄膜的形貌及光学性质影响

曹培江; 林传强; 曾玉祥; 柳文军; 贾 芳; 朱德亮; 马晓翠; 吕有明

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氧气流量对脉冲激光沉积ZnO薄膜的形貌及光学性质影响

论文 | 更新时间：2020-08-12

- 氧气流量对脉冲激光沉积ZnO薄膜的形貌及光学性质影响
- Influence of Oxygen Flow Rate on the Morphology and the Optical Properties of Thin ZnO Films Grown by Pulsed Laser Deposition
- 发光学报 2010年31卷第2期页码：239-242
- 作者机构：
  
  深圳大学材料学院深圳市特种功能材料重点实验室,广东深圳,518060
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O472.3;O482.31
- 收稿日期：2009-11-25，
  
  修回日期：1900-01-02，
  
  网络出版日期：2010-04-30，
  
  纸质出版日期：2010-04-30
- 稿件说明：
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曹培江, 林传强, 曾玉祥, 等. 氧气流量对脉冲激光沉积ZnO薄膜的形貌及光学性质影响[J]. 发光学报, 2010,31(2):239-242.

CAO Pei-jiang, LIN Chuan-qiang, ZENG Yu-xiang, et al. Influence of Oxygen Flow Rate on the Morphology and the Optical Properties of Thin ZnO Films Grown by Pulsed Laser Deposition[J]. Chinese journal of luminescence, 2010, 31(2): 239-242.
曹培江, 林传强, 曾玉祥, 等. 氧气流量对脉冲激光沉积ZnO薄膜的形貌及光学性质影响[J]. 发光学报, 2010,31(2):239-242. DOI：

CAO Pei-jiang, LIN Chuan-qiang, ZENG Yu-xiang, et al. Influence of Oxygen Flow Rate on the Morphology and the Optical Properties of Thin ZnO Films Grown by Pulsed Laser Deposition[J]. Chinese journal of luminescence, 2010, 31(2): 239-242. DOI：

摘要

使用脉冲激光沉积(PLD)方法在石英(SiO

)和单晶Si(111)基底上制备了具有高

轴择优取向的ZnO薄膜。测试结果显示:在30~70 sccm氧气流量范围内

氧气流量50 sccm时制备的ZnO薄膜具有较好的结晶质量、较高的光学透过率(≥80%)、较高的氧含量(~40.71%)、较快的生长速率(~252 nm/h)和较好的发光特性:450~580 nm附近发射峰最弱

同时~378 nm附近的紫外发光峰最强

表明薄膜材料中含有较少的氧空位等缺陷。

Abstract

ZnO is an interesting wide-band-gap semiconductor material with a direct band gap of 3.37 eV at room temperature and it makes more attention to the ultraviolet (UV) optoelectronic devices

such as UV laser

optical waveguide

and exciton-related devices. Usually

an insufficient supply of oxygen in ZnO during growth precludes various applications. In order to overcome these difficulties and obtain a strong ultraviolet near band edge emission and a much weaker emission band correlated with deep-level defects

it is necessary to prepare a high-quality thin ZnO film. In this paper

different oxygen flow rates (30

50 and 70 sccm) are introduced into the vacuum chamber and the influence of oxygen flow rate to the thin film quality is studied. It can be seen that thin ZnO films with strong

-axis preferred orientation are grown on single crystal silicon (111) and quartz (SiO

) substrates by pulsed laser deposition (PLD) method. In the range of 30~70 sccm for oxygen flow rate

thin ZnO film fabricated under the condition of O

flow rate of 50 sccm has higher optical transmittance above 80%

higher O

content ~ 40.71%

higher growth rate ~252 nm

stronger ultraviolet near band edge emission and a weaker emission band correlated with deep-level defects.

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Keywords

references

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