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1. 大连理工大学 三束材料改性重点实验室, 辽宁 大连 116024
2. 中国科学院 计算机网络信息中心, 北京 100080
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收稿日期:2009-12-10,
修回日期:1900-01-02,
网络出版日期:2010-04-30,
纸质出版日期:2010-04-30
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曲盛薇, 唐 鑫, 吕海峰, 等. Cu掺杂ZnO薄膜的光学性质[J]. 发光学报, 2010,31(2):204-208.
QU Sheng-wei, TANG xin, LU Hai-feng, et al. Optical Properties of Cu-doped Thin ZnO Films[J]. Chinese journal of luminescence, 2010, 31(2): 204-208.
采用射频反应磁控溅射方法
在Si(100)和石英基片上使用双靶溅射的方法制备了Cu掺杂ZnO 薄膜。利用X射线衍射、透射光谱和光致发光光谱分析了薄膜的晶体结构及光学性质
并与密度泛函理论计算的结果进行了对比。研究结果显示:Cu掺杂ZnO薄膜均具有高的
c
轴择优取向
无Cu及其氧化物相关相析出
掺杂对晶格参数的影响较小
与理论计算结果一致。Cu掺杂显著改变了ZnO薄膜在近紫外及可见光波段的吸收特性
其光学带隙随着Cu掺杂量的增加有所减小
带隙宽度的变化趋势与理论结果有着很好的一致性。Cu掺杂显著降低了ZnO薄膜的发光效率
具有明显的发光猝灭作用
但并不影响光致发光的发光峰位。说明Cu掺杂导致的吸收特性的改变可能与杂质能级有关
这与能带结构计算发现的Cu-3d电子态位于价带顶附近的禁带中是一致的。
paper
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