DENG Xue-ran;DENG Hong;WEI Min;CHEN Jin-ju. Effects of O<sub>2</sub>/Ar Ratio at Rated Pressure on Conductivity of Thin ZnO : Al Films[J]. 发光学报, 2010,31(2): 227-229
DENG Xue-ran;DENG Hong;WEI Min;CHEN Jin-ju. Effects of O<sub>2</sub>/Ar Ratio at Rated Pressure on Conductivity of Thin ZnO : Al Films[J]. 发光学报, 2010,31(2): 227-229DOI:
Thin ZnO : Al(AZO)films were prepared on the quartz substrates by using rf magnetron sputtering method
and the effects of O
2
/Ar ratio on the thickness
crystallization and conductivity of the thin films were investigated. Results shown that under a certain pressure
the films gain larger thickness and higher conductvity with increasing flow rate of Ar. The sample prepared in the pure Ar ambience can gain the lowest resistivity because of the high crystallization and large thickness. The thickness and resistivity is 2.06 m and 2.6610
-4
cm respectively. As shown by the results
we found that the high crystallization is the crucial factor for decreasing resistivity and the large thickness will decrease it as well.
关键词
射频磁控溅射ZnOAl(AZO)薄膜O2/Ar比导电性能
Keywords
references
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