具有Au/MoO<SUB>3</SUB>空穴注入层的有机发光二极管

涂爱国; 周 翔

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具有Au/MoO₃空穴注入层的有机发光二极管

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- 具有Au/MoO₃空穴注入层的有机发光二极管
- OLEDs with Au/MoO₃ Hole Injection Layer
- 发光学报 2010年31卷第2期页码：157-161
- 作者机构：
  
  中山大学光电材料与技术国家重点实验室
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN383.1;TN873.3
- 收稿：2009-08-30，
  
  修回：1900-1-2，
  
  网络首发：2010-04-30，
  
  纸质出版：2010-04-30
- 稿件说明：
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涂爱国, 周翔. 具有Au/MoO₃空穴注入层的有机发光二极管[J]. 发光学报, 2010,31(2):157-161.

TU Ai-guo, ZHOU Xiang. OLEDs with Au/MoO₃ Hole Injection Layer[J]. Chinese Journal of Luminescence, 2010, 31(2): 157-161.
涂爱国, 周翔. 具有Au/MoO₃空穴注入层的有机发光二极管[J]. 发光学报, 2010,31(2):157-161. DOI：

TU Ai-guo, ZHOU Xiang. OLEDs with Au/MoO₃ Hole Injection Layer[J]. Chinese Journal of Luminescence, 2010, 31(2): 157-161. DOI：

摘要

研究了单层MoO

(5 nm)和复合Au(4 nm)/MoO

(5 nm)HILs对OLEDs器件性能的影响

器件结构为ITO／HIL／NPB(40 nm)／Alq

(60 nm)／LiF (1 nm)/Al (100 nm)。与单层MoO

HIL的器件相比

具有复合Au/MoO

HIL的器件具有较大的电流和亮度。这是由于Au的功函数介于ITO和MoO

之间

导致Au的引入提高了空穴的注入效率。

Abstract

paper

关键词

Keywords

references

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具有Au/MoO3空穴注入层的有机发光二极管

OLEDs with Au/MoO3 Hole Injection Layer

DOI：

摘要

Abstract

关键词

Keywords

references

具有Au/MoO₃空穴注入层的有机发光二极管

OLEDs with Au/MoO₃ Hole Injection Layer