变条长实验测量GaN增益时条宽的影响

王 伟; 杨子文; 于 涛; 邢 兵; 王 磊; 李 睿; 杜为民; 胡晓东

doi:null

您当前的位置：

首页 >

文章列表页 >

变条长实验测量GaN增益时条宽的影响

论文 | 更新时间：2020-08-12

- 变条长实验测量GaN增益时条宽的影响
- The Impact of Stripe Width in the Variable Stripe Length Method on GaN Gain Measurements
- 发光学报 2010年31卷第1期页码：86-90
- 作者机构：
  
  北京大学物理学院
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O472.3;TN248.4
- 收稿：2009-01-25，
  
  修回：1900-1-2，
  
  网络首发：2010-02-20，
  
  纸质出版：2010-02-20
- 稿件说明：
移动端阅览
王伟, 杨子文, 于涛, 等. 变条长实验测量GaN增益时条宽的影响[J]. 发光学报, 2010,31(1):86-90.

WANG Wei, YANG Zi-wen, YU Tao, et al. The Impact of Stripe Width in the Variable Stripe Length Method on GaN Gain Measurements[J]. Chinese Journal of Luminescence, 2010, 31(1): 86-90.
王伟, 杨子文, 于涛, 等. 变条长实验测量GaN增益时条宽的影响[J]. 发光学报, 2010,31(1):86-90. DOI：

WANG Wei, YANG Zi-wen, YU Tao, et al. The Impact of Stripe Width in the Variable Stripe Length Method on GaN Gain Measurements[J]. Chinese Journal of Luminescence, 2010, 31(1): 86-90. DOI：

摘要

研究了光学变条长实验中条的宽度对半导体激光器光增益测量的影响

提出利用光刻溅射处理样品来严格控制泵浦条的宽度

并详细研究了泵浦条宽度与样品增益及饱和长度关系。实验表明:泵浦条宽度越窄

饱和长度越长

但测得的增益系数有所减小。本文利用非平衡载流子扩散模型对此现象进行了解释。

Abstract

paper

关键词

Keywords

references

. Xie Lunjun, Chen Guangde, Zhu Youzhang, et al. Different luminescence behavior between the surface and edge of ZnO film [J]. Chin. J. Lumin.(发光学报), 2006, 27 (6):910-915 (in Chinese).

. Wang Mingyue, Yuan Jinshe, Yu Guohao. Correlation of the yellow photoluminescence and excitation sources of GaN film grown by MOVPE [J]. Chin. J. Lumin. (发光学报), 2009, 30 (1):73-76 (in Chinese).

. Zheng Weimian, Lu Yingbo, Song Shumei, et al. Photolumcnescence study of the acceptor binding energy in GaAs/AlAs quantum wells [J]. Chin. J. Lumin. (发光学报), 2008, 29 (1):156-160 (in Chinese).

. Wu Dianzhong, Wang Wenxin, Yang Chengliang, et al. InAs quantum dots with InGaAs caplayer infrared detector grown by MBE [J]. Chin. J. Lumin. (发光学报), 2009, 30 (2):209-213 (in Chinese).

. Yi Juemin, Li Hongbo, Tang Fangqiong, et al. White lighting LEDs from InGaN blue LEDs and CdTe nanocrystals [J]. Chin. J. Lumin. (发光学报), 2008, 29 (6):1071-1075 (in Chinese).

. Hakki B W, Paoli T L. A way to measure the gain of semiconductor [J]. J. Appl. Phys., 1973, 44 :4413-4415.

. Lange C, Chatterjee S, Schlichenmaier C, et al. Transient gain spectroscopy of (GaIn)As quantum wells: Experiment and microscopic analysis [J]. Appl. Phys. Lett., 2007, 90 (25):251102-1-3.

. Kawakami Y, Narukawa Y, Omae K, et al. Dynamics of optical gain in InxGa1-xN multi-quantum-well-based laser diodes [J]. Appl. Phys. Lett., 2000, 77 (14):2151-2153.

. Lange C, Schwalm M, Chatterjee S, et al. The variable stripe-length method revisited: Improved analysis [J]. Appl. Phys. Lett., 2007, 91 (19):191107-1-4.

. Penzkofer A, Holzer W, Tillmann H, et al. Leaky-mode emission of luminescent thin films on transparent substrates [J]. Opti.Commun., 2004, 229 (1-6):279-290.

. Vehse M, Meinertz J, Lange O, et al. Analysis of gain saturation behavior in GaN based quantum well lasers [J]. Phys. Stat. Sol. (c), 2002, 1 (1):43-50.

. Swietlik T, Franssen G, Skierbiszewski C, et al. Comparison of gain in group-Ⅲ-nitride laser structures grown by metal-organic vapour phase epitaxy and plasma-assisted molecular beam epitaxy on bulk GaN substrates [J]. Semicond. Sci. Technol., 2007, 22 (7):736-741.

. Mickevi iusa J, Tamulaitis G, Shur M S, et al. Saturated gain in GaN epilayers studied by variable stripe length technique [J]. J. Appl. Phys., 2006, 99 (10):103513-1-6.

. Vehse M, Michler P, Gutowski J, et al. Influence of composition and well-width fluctuations on optical gain in (In,Ga)N multiple quantum wells [J]. Semicond., Sci. Technol., 2001, 16 (5):406-412.

. Chii-Chang Chen, Kun-Long Hsieh, Jinn-Kong Sheu, et al. Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure [J]. Materials Science and Engineering (b),2002, 93 (1-3):28-30.

. Kyhm K, Taylor R A, Ryan J F, et al. Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells [J]. Appl. Phys. Lett., 2001, 79 (21):3434-3436.

. Frankowsky G, Steuber F, Harle V, et al. Optical gain in GaInN/GaN heterostructures [J]. Appl. Phys. Lett., 1996, 68 (26):3746-3748.

. Mohs G, Aoki T, Nagai M, et al. Failure of the modal gain model in a GaN based laser diode [J]. Sol. Stat. Commun., 1997, 104 (11):643-648.

. Enke L, Bingsheng Z H, Jinsheng L. Physics of Semiconductors [M]. 7th edition, Beijing: China Publishing House of Electronics Industry, 2008, 145-178 (in Chinese).

. Chernyak L, Osinsky A, Schulte A. Minority carrier transport in GaN and related materials [J]. Sol. Stat. Electron., 2001, 45 (9):1687-1702.

. Yariv A. Quantum Electronics [M]. 3rd edition, San Francisco: John Wiley & Sons, 1989, 560-581.

. Michler P, Lange O, Vehse M, et al. Gain saturation in (In,Ga)N/GaN/(Al,Ga)N laser structures [J]. Phys. Stat. Sol. (a), 2000, 180 (1):391-396.

. Vehse M, Michler P, Lange O, et al. Optical gain and saturation in nitride-based laser structures [J]. Appl. Phys. Lett., 2001, 79 (12):1763-1765.

浏览量

324

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

不同Mo层厚度的AlN/Mo/Sc0.2Al0.8N复合结构上MOCVD外延GaN

SiO2图形化蓝宝石衬底对GaN生长及LED发光性能的影响

4-inch蓝宝石图形衬底上GaN基白光LED制备及表征

联氨溶液钝化GaAs(100)表面特性及其发光性能

电子阻挡层Al组分对Si衬底GaN基黄光LED内量子效率的影响