920 nm光抽运垂直外腔面发射半导体激光器结构设计

梁雪梅; 吕金锴; 程立文; 秦 莉; 宁永强; 王立军

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920 nm光抽运垂直外腔面发射半导体激光器结构设计

论文 | 更新时间：2020-08-12

- 920 nm光抽运垂直外腔面发射半导体激光器结构设计
- Structural Design of Vertical-external-cavity Surface-emitting Semiconductor Laser with 920 nm
- 发光学报 2010年31卷第1期页码：79-85
- 作者机构：
  
  1. 中国科学院研究生院北京,100049
  2. 空军航空大学,吉林长春,130022
  3. 中国科学院长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN248.4
- 收稿日期：2009-08-25，
  
  修回日期：1900-01-02，
  
  网络出版日期：2010-02-20，
  
  纸质出版日期：2010-02-20
- 稿件说明：
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梁雪梅, 吕金锴, 程立文, 等. 920 nm光抽运垂直外腔面发射半导体激光器结构设计[J]. 发光学报, 2010,31(1):79-85.

LIANG Xue-mei, LU Jin-kai, CHENG Li-wen, et al. Structural Design of Vertical-external-cavity Surface-emitting Semiconductor Laser with 920 nm[J]. Chinese journal of luminescence, 2010, 31(1): 79-85.
梁雪梅, 吕金锴, 程立文, 等. 920 nm光抽运垂直外腔面发射半导体激光器结构设计[J]. 发光学报, 2010,31(1):79-85. DOI：

LIANG Xue-mei, LU Jin-kai, CHENG Li-wen, et al. Structural Design of Vertical-external-cavity Surface-emitting Semiconductor Laser with 920 nm[J]. Chinese journal of luminescence, 2010, 31(1): 79-85. DOI：

摘要

设计并优化了一种用808 nm的大功率激光二极管为抽运光源

0.09

0.91

As量子阱结构为增益介质的920 nm光抽运半导体垂直外腔面发射激光器。运用有限元方法

对激光器的电特性方程和光特性方程求自洽解

计算了器件各种特性参量。分析了单个周期内不同阱的个数(1

2和3)、不同阱深、不同垒宽、不同非吸收层组分、不同非吸收层尺寸条件下

器件性能的改变

特别是模式、阈值和光-光转换效率的改变

从而选择一个最佳的结构。

Abstract

A vertical-external-cavity surface-emitting 920 nm semiconductor laser (OP-VECSEL) with active region of In

0.09

0.91

As quantum well (QW) system pumped by 808 nm laser diode module was constructed and optimized. By the finite element method

self-consistent solutions of electronic and optical equations of the semiconductor laser were realized and the characteristic parameters of OP-VECSEL were calculated. The performances of the especial mode in device

the threshold and the optical-optical conversion efficiency were analyzed by dealing with different structure parameters

including number of QWs (1

2 and 3) in one period

QW depth

width and component of barrier and dimension of the non-absorption layer. The best structure of the laser was chosen.

关键词

Keywords

references

. Kuznestov M, Harkimi F, Sprague A R, et al. Design and characteristics of high-power(＞0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams [J]. IEEE J. Sel. Top. Quantum Electron., 1999, 5 (3):561-573.

. Chillar J, Butterworth S, Zeitschel A, et al. High power optically pumped semiconductor lasers [J]. SPIE, 2004, 5332 :143-150.

. Fan L, Fallahi M, Hader J, et al. Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources [J]. Appl. Phys. Lett., 2005, 86 (21):211116-1-3.

. Cheng Liwen Liang Xuemei, Qin Li, et al. Theoretical analysis of key parameters of 980 nm optically pumped semiconductor vertical external cavity surface emitting laser [J]. Chin. J. Lumin. (发光学报), 2008, 29 (4):713-715 (in Chinese).

. Peng Biao, Ning Yongqiang, Qin Li, et al. Polarization characteristics of 980 nm high power vertical cavity surface emitting laser [J]. Chin. J. Lumin.(发光学报), 2008, 29 (5):845-850 (in Chinese).

. Ma Qiang, Tian Zhenhua, Wang Zhenfu, et al. A theoretical model of high power VCSEL based on the thermal-offset-current [J]. Chin. J. Lumin.(发光学报), 2009, 30 (4):463-466 (in Chinese).

. Aschwanden A, Lorenser D, Unold H J, et al. 10 GHz passively mode-locked external-cavity semiconductor laser with 1.4 W average output power [J]. Appl. Phys. Lett., 2005, 86 (13):131102-1-3.

. Hastie J, Calvez S, Dawson M D. High power CW red VECSEL with linearly polarized TEM00 output beam [J]. Optics Exp., 2005, 13 (1):77-81.

. Chillar J L A, Zhou H, Weiss E, et al. Blue and green optically-pumped semiconductor lasers for display [J]. SPIE, 2005, 5740 :41-47.

. Chen Weiyou, Zhang Yejin, Liu Shiyong. Computer Aided Design and Analysis of Semiconductor Laser [M]. Changchun: Publishing House of Jilin University, 2003,1-10 (in Chinese).

. Jiang Jianping. Semiconductor Laser [M]. Beijing: Publishing House of Electronics Industry, 2000,109-110 (in Chinese).

. Ongstad A P, Gallant D J, Dente G C. Carrier lifetime saturation in InGaAs single quantum wells [J]. Appl. Phys. Lett., 1995, 66 (20):2730-2732.

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