低温CVD法在玻璃衬底上制备ZnO纳米线阵列

夏文高; 陈金菊; 邓 宏

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低温CVD法在玻璃衬底上制备ZnO纳米线阵列

论文 | 更新时间：2020-08-12

- 低温CVD法在玻璃衬底上制备ZnO纳米线阵列
- Low-temperature Growth of ZnO Nanowire Array on Glass Substrate by Chemical Vapor Deposition
- 发光学报 2010年31卷第2期页码：258-260
- 作者机构：
  
  电子科技大学电子薄膜与集成器件国家重点实验室,四川成都,610054
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O484.1
- 纸质出版日期：2010-4-30，
  
  网络出版日期：2010-4-30，
  
  收稿日期：2009-11-20，
  
  修回日期：1900-1-2，
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夏文高, 陈金菊, 邓宏. 低温CVD法在玻璃衬底上制备ZnO纳米线阵列[J]. 发光学报, 2010,31(2):258-260.

XIA Wen-gao, CHEN Jin-ju, DENG Hong. Low-temperature Growth of ZnO Nanowire Array on Glass Substrate by Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2010,31(2):258-260.
夏文高, 陈金菊, 邓宏. 低温CVD法在玻璃衬底上制备ZnO纳米线阵列[J]. 发光学报, 2010,31(2):258-260. DOI：

XIA Wen-gao, CHEN Jin-ju, DENG Hong. Low-temperature Growth of ZnO Nanowire Array on Glass Substrate by Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2010,31(2):258-260. DOI：

摘要

采用化学气相沉积(CVD)法在镀Cr(20 nm)的玻璃衬底上

低温制备了ZnO纳米线阵列。利用扫描电子显微镜(SEM)和X射线衍射(XRD)对样品的表面形貌和微结构进行了分析表征。结果表明:源分解温度1 350 ℃

衬底温度450~500 ℃

氩气流量为35 sccm时

ZnO纳米线在玻璃衬底上呈现有序生长;XRD谱图中只观测到ZnO(002)衍射峰。表明制备的纳米线阵列具有高度

轴择优取向生长特性和较高的结晶质量。

Abstract

Well-aligned ZnO nanowire arrays were synthesized on Chromium (20 nm) coated glass substrates via chemical vapor deposition (CVD) method in a low temperature. The surface morphology and microstructure of products was characterized by scanning electron microscope (SEM) and X-ray diffraction (XRD). Well-aligned ZnO nanowire arrays were prepared on glass in SEM images when the reaction temperature of source come up to 1 350 ℃

the substrate temperature maintains about 450~500 ℃

and the argon gas flow rate is 35 sccm. The presence of only (002) diffraction peak in the XRD patterns indicated that ZnO nanowire arrays exhibits

-axis preferred orientation and good crystal quality.

关键词

化学气相沉积ZnO纳米线阵列低温生长

Keywords

chemical vapor deposition (CVD)ZnO nanowire arrayslow-temperature growth

references

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