阴极电沉积ZnO薄膜的取向控制生长

您当前的位置：

首页 >

文章列表页 >

阴极电沉积ZnO薄膜的取向控制生长

论文 | 更新时间：2020-08-12

|

- 阴极电沉积ZnO薄膜的取向控制生长
- Orientation-controlling Growth of Electrodeposited ZnO Films on Cathode
- 发光学报 2010年31卷第2期页码：214-218
- 作者机构：
  
  深圳大学材料学院, 深圳市特种功能材料重点实验室,广东深圳,518060
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O484.1
- 收稿日期：2009-11-20，
  
  修回日期：1900-01-02，
  
  网络出版日期：2010-04-30，
  
  纸质出版日期：2010-04-30
- 稿件说明：
移动端阅览
柳文军, 蔡少敏, 谢红丝, 等. 阴极电沉积ZnO薄膜的取向控制生长[J]. 发光学报, 2010,31(2):214-218.

LIU Wen-jun, CAI Shao-min, XIE Hong-si, et al. Orientation-controlling Growth of Electrodeposited ZnO Films on Cathode[J]. Chinese journal of luminescence, 2010, 31(2): 214-218.
柳文军, 蔡少敏, 谢红丝, 等. 阴极电沉积ZnO薄膜的取向控制生长[J]. 发光学报, 2010,31(2):214-218. DOI：

LIU Wen-jun, CAI Shao-min, XIE Hong-si, et al. Orientation-controlling Growth of Electrodeposited ZnO Films on Cathode[J]. Chinese journal of luminescence, 2010, 31(2): 214-218. DOI：

摘要

采用阴极电沉积法

在Zn(NO

3

)

2

水溶液中

以304不锈钢为衬底制备了ZnO薄膜

研究了Zn

2+

浓度和电流密度对ZnO薄膜择优取向的影响规律。XRD结果表明:随着Zn

2+

浓度和电流密度增大

ZnO薄膜逐渐由(002)面择优取向生长转变为(101)面择优取向生长;当Zn

2+

浓度为0.005 mol·L

-1

、电流密度为2.0 mA·cm

-2

或Zn

2+

浓度为0.05 mol·L

-1

、电流密度为0.5 mA·cm

-2

时

可以得到(002)面择优取向生长的ZnO薄膜;当Zn

2+

浓度为0.05 mol·L

-1

、电流密度为2.0 mA·cm

-2

时

可以得到(101)面择优取向生长的ZnO薄膜。根据二维晶核理论

通过分析不同生长条件下的过饱和度及其对ZnO的(002)型和(101)型二维晶核形核活化能的影响

对这一规律进行了解释。可见

通过改变Zn

2+

浓度和电流密度能够实现阴极电沉积ZnO薄膜的取向可控生长。

Abstract

It is important to control the orientation of ZnO film because many properties of ZnO film vary with its preferred orientation. Most of ZnO films ever reported are orientated towards

c

-axis. However

in the light-emitting application

nonpolar or semipolar ZnO films grown not along with

c

-axis are much preferable because the luminous efficiency of the

c

-axis orientated ZnO film is low due to the quantum confined Stark effect. Thus

the study of ZnO film grown along with other than

c

-axis is necessary. In this paper

ZnO films were fabricated on 304 stainless steel substrates by the cathodic electrodeposition in Zn(NO)

3

aqueous solution

and the influences of Zn

2+

concentration and the current density on the preferred orientation of the ZnO film were studied. X-ray diffraction results showed that as Zn

2+

concentration and the current density increases

the preferred orientation of ZnO film changes from (002) to (101) gradually. When Zn

2+

concentration is 0.005 mol·L

-1

and the current density is 2.0 mA·cm

-2

or Zn

2+

concentration is 0.05 mol·L

-1

and the current density is 0.5 mA·cm

-2

the prepared ZnO films are (002) preferred orientation. When Zn

2+

concentration is 0.05 mol·L

-1

and the current density is 2.0 mA·cm

-2

the prepared ZnO film is (101) preferred orientation. The phenomenon can be explained based on the two-dimensional nuclei theory. When Zn

2+

concentration or the current density is low

the supersaturation of ZnO around substrate is also low and the nucleation activation energy of two-dimensional (002) nuclei is lower than that of (101) nuclei

therefore ZnO film is (002) preferred orientation. When Zn

2+

concentration and the current density is high

the supersaturation of ZnO is also high and the nucleation activation energy of (002) nuclei is higher than that of (101) nuclei

therefore ZnO film is (101) preferred orientation. The results suggested that orientation-controllable growth of the cathodically electrodeposited ZnO films can be achieved by adjusting Zn

2+

concentration and the current density.

关键词

Keywords

references

. zgür V, Alivov Ya I, Liu C, et al. A comprehensive review of ZnO materials and devices [J]. J. Appl. Phys., 2005, 98 (4):041301-1-103.

. Li Aixia, Bi Hong, Liu Yanmei, et al. Structure and optical properties of (Co,Cu)-codoped ZnO thin films [J]. Chin. J. Lumin. (发光学报), 2008, 29 (2):289-293 (in Chinese).

. Liu Xuedong, Gu Shulin, Li Feng, et al. The effect of carrier gas H2 used during MOCVD-grown on the properties of N-doped ZnO [J]. Chin. J. Lumin. (发光学报), 2008, 29 (3):441-446 (in Chinese).

. Gal D, Hodes G, Lincot D, et al. Electrochemical deposition of zinc oxide films from non-aqueous solution: a new buffer/window process for thin film solar cells [J]. Thin Solid Films, 2000, 361-362 :79-83.

. Jiang Zhiyuan, Xu Tao, Xie Zhaoxiong, et al. Molten salt route toward the growth of ZnO nanowires in unusual growth directions [J]. J. Phys. Chem. B, 2005, 109 (49):23269-23273.

. Guo W, Allenic A, Chen Y B, et al. ZnO epitaxy on (111) Si using epitaxial Lu2O3 buffer layers [J]. Appl. Phys. Lett., 2008, 92 (7):072101-1-3.

. Sun Jian, Bai Yizhen, Gu Jianfeng, et al. The growth and optical properties of ZnO films deposited on freestanding thick diamond films [J]. Chin. J. Lumin.(发光学报), 2008, 29 (3):455-459 (in Chinese).

. Petersen J, Brimont C, Gallart M, et al. Structural and photoluminescence properties of ZnO thin films prepared by sol-gel process [J]. J. Appl. Phys., 2008, 104 (11):113539-1-5.

. Zhu M W, Gong J, Sun C, et al. Investigation of correlation between the microstructure and electrical properties of sol-gel derived ZnO based thin films [J]. J. Appl. Phys., 2008, 104 (7):073113-1-7.

. Ma Yukun, Yao Ning, Gao Zhifeng, et al. The preparation of ZnO film by two step chemical deposition method and its field emission properties [J]. Chin. J. Lumin. (发光学报), 2009, 30 (3):368-372 (in Chinese).

. Kashiwaba Y, Abe T, Onodera S, et al. Comparison of non-polar ZnO (112 0) films deposited on single crystal ZnO (112 0) and sapphire (011 2) substrates [J]. J. Crystal Growth, 2007, 298 :477-480.

. Ho Y T, Wang W L, Peng C Y, et al. Growth of nonpolar (112 0) ZnO films on LaAlO3(001) substrates [J]. Appl. Phys. Lett., 2008, 93 (12):121911-1-2.

. Han S K, Kim J G, Kim J H, et al. Effects of two-step growth by employing Zn-rich and O-rich growth conditions on pro-perties of (112 0) ZnO films grown by plasma-assisted molecular beam epitaxy on sapphire [J]. J. Vac. Sci. Technol. B, 2009, 27 (3):1635-1640.

. Tian Ke, Shi Yuanyuan, Xu Xiaoqiu, et al. The investigation of growth orientations of ZnO films by CVD [J]. Chin. J. Lumin. (发光学报), 2008, 29 (2):294-298 (in Chinese).

. Zhou Shaomin. Metal Electrodeposition-principles and Research Methods [M]. Shanghai: Shanghai Scientific and Technical Publishers, 1987, 261-266 (in Chinese).

0

浏览量

228

下载量

0

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

相关文章

硝酸铟诱导的电沉积氧化锌纳米柱光学性质裁剪

直流磁控溅射生长(002)择优取向AlN薄膜及其光致发光

电沉积掺铝氧化锌纳米柱的光学带隙蓝移与斯托克斯位移

透明导电ZnO薄膜的电化学制备及性能研究

电沉积法制备ZnO纳米柱及其机制研究

相关作者

汤洋

沈龙海

李思达

李健亮

赵鹏宇

刘俊

吕伟

汤洋

相关机构

北京低碳清洁能源研究院

国家能源集团绿色能源与建筑研究中心

沈阳理工大学理学院

北京低碳清洁能源研究所

同济大学先进土木工程材料教育部重点实验室

AI问答

地址：长春市经济技术开发区东南湖大路3888号邮编：130033
联系电话：0431-86176862 Email：fgxbt@126.com
本系统由Light学术出版中心、北京北大方正电子有限公司共建吉ICP备11002662号-17 京公网安备11010802024621
本系统建议在Chrome、 IE9+ 以上版本浏览器阅读本站内容，360浏览器请切换至极速模式
Cookies帮助我们提供服务并提供个性化体验。使用本网站，即表示您同意我们使用Cookies

⁰