ZnO薄膜微结构变化对光电特性的影响

刘秉策; 刘磁辉; 孙利杰; 易 波

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ZnO薄膜微结构变化对光电特性的影响

论文 | 更新时间：2020-08-12

- ZnO薄膜微结构变化对光电特性的影响
- Influence of ZnO Microstructure Variation on Its Photoelectricity Characteristics
- 发光学报 2010年31卷第2期页码：194-198
- 作者机构：
  
  中国科学技术大学物理系
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O472.3;O472.4
- 收稿日期：2009-11-01，
  
  修回日期：1900-01-02，
  
  网络出版日期：2010-04-30，
  
  纸质出版日期：2010-04-30
- 稿件说明：
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刘秉策, 刘磁辉, 孙利杰, 等. ZnO薄膜微结构变化对光电特性的影响[J]. 发光学报, 2010,31(2):194-198.

LIU Bing-ce, LIU Ci-hui, SUN Li-jie, et al. Influence of ZnO Microstructure Variation on Its Photoelectricity Characteristics[J]. Chinese journal of luminescence, 2010, 31(2): 194-198.
刘秉策, 刘磁辉, 孙利杰, 等. ZnO薄膜微结构变化对光电特性的影响[J]. 发光学报, 2010,31(2):194-198. DOI：

LIU Bing-ce, LIU Ci-hui, SUN Li-jie, et al. Influence of ZnO Microstructure Variation on Its Photoelectricity Characteristics[J]. Chinese journal of luminescence, 2010, 31(2): 194-198. DOI：

摘要

使用脉冲激光淀积(PLD)技术在n型Si衬底上沉积氧化锌(ZnO)薄膜

在O

气氛下对样品进行了500 ℃(Sample 1

S1)

600 ℃(Sample 2

S2)

700 ℃(Sample 3

S3)和800 ℃(Sample 4

S4)退火

随后进行了X射线衍射(XRD)谱

椭偏光折射率

热激电流(TSC) 和电容-电压(

C-V

)的测量。研究发现:S1中晶界的电子陷阱由高浓度的深能级杂质(Zn

)提供的电子填充

该能级位于

-0.24±0.08 eV。S3中出现与中性施主(D

)有关的深能级中心

其

-0.13±0.03 eV

推测D

的出现与高温氧气条件退火下晶界处形成的复合体缺陷有关。XRD和椭偏光折射率测量结果表明:氧气对ZnO薄膜微结构的修饰是改变ZnO/Si结构光电特性的主要因素。

Abstract

ZnO/n-Si heterostructures were fabricated using pulsed laser deposition (PLD)

and then samples were annealed at 500 ℃ (S1)

600 ℃ (S2)

700 ℃ (S3) and 800 ℃ (S4) at oxygen ambience for 1 h

respectively. ZnO film deposited on Si substrates usually forms into polycrystalline structure

leading to barrier at the ZnO grain boundary. The grain boundary has a great influence on photoelectricity of ZnO film

but so far as we known

there are no reports in detail about this aspect. In order to clarify the influence of grain boundary variation on the photoelectricity characteristics of ZnO films

we performed thermally stimulated current (TSC)

current-voltage (

C-V

)

X-ray diffraction (XRD) and ellipsometry measurements.The results showed that a deep level center located at

-0.24±0.08 eV is obtained by TSC in S1

which is related to an intrinsic defect. The surface states of the ZnO grains

which have acceptor behavior and capture electrons from defects

result in the formation of grain barriers. A neutral donor deep level center (D

) located at

-0.13±0.03 eV appears as the annealing temperature reaches to 700 ℃.It could be due to the D

complex defect in grain boundary that has a relationship with high temperature oxygen treatment. Combined with XRD and ellipsometry results

it was evident that

after oxygen annealing

the microstructure of ZnO films is improved and the stoichiometric deviation which dominated the photoelectricity characteristics of the ZnO films.

关键词

Keywords

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