退火处理对ZnS薄膜的结构和光学性质的影响

徐言东; 李清山; 蒙延峰; 张 霞; 于业梅; 李新坤; 丁旭丽

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退火处理对ZnS薄膜的结构和光学性质的影响

论文 | 更新时间：2020-08-12

- 退火处理对ZnS薄膜的结构和光学性质的影响
- Influences of Annealing Treatment on Structure and Optical Properties of ZnS Films
- 发光学报 2009年30卷第5期页码：634-639
- 作者机构：
  
  1. 鲁东大学,山东烟台,264025
  2. 曲阜师范大学物理工程学院, 山东曲阜,273165
  3. 曲阜师范大学激光研究所, 山东曲阜,273165
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O484.1;O484.4+1
- 收稿日期：2008-11-10，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-10-30，
  
  纸质出版日期：2009-10-30
- 稿件说明：
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徐言东, 李清山, 蒙延峰, 等. 退火处理对ZnS薄膜的结构和光学性质的影响[J]. 发光学报, 2009,30(5):634-639.

XU Yan-dong, LI Qing-shan, MENG Yan-feng, et al. Influences of Annealing Treatment on Structure and Optical Properties of ZnS Films[J]. Chinese journal of luminescence, 2009, 30(5): 634-639.
徐言东, 李清山, 蒙延峰, 等. 退火处理对ZnS薄膜的结构和光学性质的影响[J]. 发光学报, 2009,30(5):634-639. DOI：

XU Yan-dong, LI Qing-shan, MENG Yan-feng, et al. Influences of Annealing Treatment on Structure and Optical Properties of ZnS Films[J]. Chinese journal of luminescence, 2009, 30(5): 634-639. DOI：

摘要

在200 ℃下利用激光沉积技术分别在玻璃和Si(100)上沉积制备了ZnS薄膜

并在300

400

500 ℃下退火1 h。用X射线衍射(XRD)仪、紫外/可见光/近红外分光光度计、台阶仪和原子力显微镜(AFM)分别对不同衬底上样品的特征进行了观察。结果表明

玻璃上的ZnS薄膜只在28.5°附近存在着(111)方向的高度取向生长。在可见光范围内透射率为60%~90%。计算显示薄膜的光学带隙在3.46~3.53 eV之间

其小于体材料带隙的原因在于硫元素的缺失。根据光学带隙判断薄膜是单晶立方结构的β-ZnS。Si(100)上生长的是多晶ZnS薄膜:500 ℃下退火后

表面也比未退火表面更加平整致密

变化规律与ZnS/glass的类似。说明高温下退火可以有效地促进晶粒的结合并改善薄膜质量。

Abstract

ZnS films were prepared on glass and p-Si(100) substrates by pulse laser deposition at 200 ℃ temperature. Annealing treatment was conducted at 300

400 and 500 ℃. XRD spectra

ultraviolet-visible spectra

Alpha-step surface profiler and atomic force microscopy(AFM) was used to observe the characteristics of ZnS/glass and ZnS/Si(100).The results showed that highly oriented films are prepared with only one sharp XRD peak at 2

=28.5°corresponding to β-ZnS (111) crystalline orientation on glass substrates. The UV-Vis absorption showed that the films deposited on glass have a good transmission over 60% in visible region. The calculation of optical band gap ranged from 3.46~3.53 eV that can be ascribed to sulphur deficiency. The images from AFM showed that annealed treatment at 500 ℃ can increase the grain size and improve the quality of ZnS films on Si(100)

making the film surface become more smooth and compact than that of as-grown films at 200 ℃.

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Keywords

references

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