Zn1-xMgxO和Zn1-xMnxO薄膜的制备及其发光性能

吕 婷; 张志勇; 闫军锋; 赵丽丽; 赵 武

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Zn_1-xMg_xO和Zn_1-xMn_xO薄膜的制备及其发光性能

论文 | 更新时间：2020-08-12

- Zn_1-xMg_xO和Zn_1-xMn_xO薄膜的制备及其发光性能
- The Preparation and Optical Properties of Zn_1-xMg_xO and Zn_1-xMn_xO Thin Films by Sol-gel Process
- 发光学报 2009年30卷第5期页码：624-629
- 作者机构：
  
  西北大学信息科学与技术学院,陕西西安,710127
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O482.31
- 收稿日期：2008-07-17，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-10-30，
  
  纸质出版日期：2009-10-30
- 稿件说明：
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吕婷, 张志勇, 闫军锋, 等. Zn_1-xMg_xO和Zn_1-xMn_xO薄膜的制备及其发光性能[J]. 发光学报, 2009,30(5):624-629.

LU Ting, ZHANG Zhi-yong, YAN Jun-feng, et al. The Preparation and Optical Properties of Zn_1-xMg_xO and Zn_1-xMn_xO Thin Films by Sol-gel Process[J]. Chinese journal of luminescence, 2009, 30(5): 624-629.
吕婷, 张志勇, 闫军锋, 等. Zn_1-xMg_xO和Zn_1-xMn_xO薄膜的制备及其发光性能[J]. 发光学报, 2009,30(5):624-629. DOI：

LU Ting, ZHANG Zhi-yong, YAN Jun-feng, et al. The Preparation and Optical Properties of Zn_1-xMg_xO and Zn_1-xMn_xO Thin Films by Sol-gel Process[J]. Chinese journal of luminescence, 2009, 30(5): 624-629. DOI：

摘要

采用溶胶-凝胶技术

在Si(110)衬底上制备了Mg、Mn掺杂外延生长的Zn

1-x

O和Zn

1-x

O薄膜

通过XRD、AFM、PL等考察不同杂质浓度对薄膜结晶质量和发光性能的影响。结果表明:Zn

1-x

O和Zn

1-x

O薄膜均具有较高的T

(002)结构系数和较为光滑、平整的表面形貌。掺杂使得薄膜的紫外发光峰向短波方向移动至365 nm左右

同时Zn

1-x

O薄膜的室温可见光发射得以有效地钝化

使其近带边紫外光发射与深能级可见光发射比例高达56

极大地提高了薄膜紫外发光性能。并对掺杂薄膜紫外发光蓝移和Zn

1-x

O薄膜室温可见光发射的猝灭机理进行了深入探讨

得出掺杂组分为Zn

0.85

0.15

O、Zn

0.97

0.03

O时

薄膜具有最强的紫外光发射性能。

Abstract

Zinc oxide (ZnO) semiconductor with a large exciton binding energy of 60 meV and a direct-band gap of 3.37 eV has attracted tremendous attention in recent years because of its high potential for applications

such as short wavelength optical devices

photonic devices and laser systems etc. Especially

the optical pro-perties of ZnO can be obviously influenced by impurity doping with different concentrations

so several techniques

such as pulsed laser deposition

reactive thermal evaporation and sol-gel process

have been employed to synthesize high quality ZnO and doped-ZnO thin films. In this work

based on the fact that metal-doped concentrations have great influence on the crystal structure and ultraviolet(UV) emission of ZnO

such as Mg-doped and Mn-doped ZnO thin films

a consistent set of epitaxial n-type conducting Zn

1-x

xO and Zn

1-x

xO thin films were grown by sol-gel process on Si(110) substrates

and their crystal structures and radiation qualities influenced by different doping concentrations were studied. Meanwhile

the results of XRD

atomic force microscope(AFM) and photoluminescence(PL) spectrum indicated that the crystal structure

surface morphology and UV emission are sensitive to the doping concentrations. Compared with ZnO

1-x

-Mg

xO and Zn

1-x

xO thin films tends to growth in c-axis-orientation

and a strong blue-shift UV emission peak at 365 nm appears both in Zn

1-x

xO and Zn

1-x

xO. In particular

the visible emission of ZnO

which is typically due to the existence of surface defects and oxygen vacancies(V″

) defects appears between 430 and 490 nm in the PL spectra. It is passivated in Zn

1-x

xO films at room temperature

which leads to that the UV emission qualities of Zn

1-x

xO thin films being greater as 56 times as the visible emissions in the optimal doping concentration. At the same time

the causes of blue-shift and Zn

1-x

xOs visible emissions passivation was studied

through the experiments it was indicated that Zn

1-x

xOs blue-shift UV emissions could be primarily caused by the Burstein-Moss(BM) effect

and the visible emissions passivation could be caused by the reduction of V″

defects induced by the Mn oxide. At last

the optimal doping concentrations of Zn

0.85

0.15

O and Zn

0.97

0.03

O were demonstrated

which displays the strong blue-shift UV emissions and the best UV emission qualities.

关键词

Keywords

references

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