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西北大学 信息科学与技术学院,陕西 西安,710127
纸质出版日期:2009-10-30,
网络出版日期:2009-10-30,
收稿日期:2008-7-17,
修回日期:1900-1-2,
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吕 婷, 张志勇, 闫军锋, 等. Zn1-xMgxO和Zn1-xMnxO薄膜的制备及其发光性能[J]. 发光学报, 2009,30(5):624-629.
LU Ting, ZHANG Zhi-yong, YAN Jun-feng, et al. The Preparation and Optical Properties of Zn1-xMgxO and Zn1-xMnxO Thin Films by Sol-gel Process[J]. Chinese Journal of Luminescence, 2009,30(5):624-629.
采用溶胶-凝胶技术
在Si(110)衬底上制备了Mg、Mn掺杂外延生长的Zn
1-x
Mg
x
O和Zn
1-x
Mn
x
O薄膜
通过XRD、AFM、PL等考察不同杂质浓度对薄膜结晶质量和发光性能的影响。结果表明:Zn
1-x
Mg
x
O和Zn
1-x
Mn
x
O薄膜均具有较高的T
c
(002)结构系数和较为光滑、平整的表面形貌。掺杂使得薄膜的紫外发光峰向短波方向移动至365 nm左右
同时Zn
1-x
Mn
x
O薄膜的室温可见光发射得以有效地钝化
使其近带边紫外光发射与深能级可见光发射比例高达56
极大地提高了薄膜紫外发光性能。并对掺杂薄膜紫外发光蓝移和Zn
1-x
Mn
x
O薄膜室温可见光发射的猝灭机理进行了深入探讨
得出掺杂组分为Zn
0.85
Mg
0.15
O、Zn
0.97
Mn
0.03
O时
薄膜具有最强的紫外光发射性能。
Zinc oxide (ZnO) semiconductor with a large exciton binding energy of 60 meV and a direct-band gap of 3.37 eV has attracted tremendous attention in recent years because of its high potential for applications
such as short wavelength optical devices
photonic devices and laser systems etc. Especially
the optical pro-perties of ZnO can be obviously influenced by impurity doping with different concentrations
so several techniques
such as pulsed laser deposition
reactive thermal evaporation and sol-gel process
have been employed to synthesize high quality ZnO and doped-ZnO thin films. In this work
based on the fact that metal-doped concentrations have great influence on the crystal structure and ultraviolet(UV) emission of ZnO
such as Mg-doped and Mn-doped ZnO thin films
a consistent set of epitaxial n-type conducting Zn
1-x
Mg
<
em
>
xO and Zn
1-x
Mn
<
em
>
xO thin films were grown by sol-gel process on Si(110) substrates
and their crystal structures and radiation qualities influenced by different doping concentrations were studied. Meanwhile
the results of XRD
atomic force microscope(AFM) and photoluminescence(PL) spectrum indicated that the crystal structure
surface morphology and UV emission are sensitive to the doping concentrations. Compared with ZnO
Zn
1-x
-Mg
<
em
>
xO and Zn
1-x
Mn
<
em
>
xO thin films tends to growth in c-axis-orientation
and a strong blue-shift UV emission peak at 365 nm appears both in Zn
1-x
Mg
<
em
>
xO and Zn
1-x
Mn
<
em
>
xO. In particular
the visible emission of ZnO
which is typically due to the existence of surface defects and oxygen vacancies(V″
O
) defects appears between 430 and 490 nm in the PL spectra. It is passivated in Zn
1-x
Mn
<
em
>
xO films at room temperature
which leads to that the UV emission qualities of Zn
1-x
Mn
<
em
>
xO thin films being greater as 56 times as the visible emissions in the optimal doping concentration. At the same time
the causes of blue-shift and Zn
1-x
Mn
<
em
>
xOs visible emissions passivation was studied
through the experiments it was indicated that Zn
1-x
Mn
<
em
>
xOs blue-shift UV emissions could be primarily caused by the Burstein-Moss(BM) effect
and the visible emissions passivation could be caused by the reduction of V″
O
defects induced by the Mn oxide. At last
the optimal doping concentrations of Zn
0.85
Mg
0.15
O and Zn
0.97
Mn
0.03
O were demonstrated
which displays the strong blue-shift UV emissions and the best UV emission qualities.
溶胶-凝胶技术Zn1-xMgxO薄膜Zn1-xMnxO薄膜光致发光
sol-gelZn1-xMgxO filmsZn1-xMnxO filmsphotoluminescence(PL)
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