InGaAsSb/InP的MBE生长及特性

李占国; 刘国军; 尤明慧; 李 林; 金哲军; 李 梅; 王 勇; 王晓华

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InGaAsSb/InP的MBE生长及特性

论文 | 更新时间：2020-08-12

- InGaAsSb/InP的MBE生长及特性
- Growth and Characterization of InGaAsSb on InP Substrate by Molecular Beam Epitaxy
- 发光学报 2009年30卷第5期页码：630-633
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室, 吉林长春 130022
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O482.31
- 纸质出版日期：2009-10-30，
  
  网络出版日期：2009-10-30，
  
  收稿日期：2009-1-25，
  
  修回日期：1900-1-2，
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李占国, 刘国军, 尤明慧, 等. InGaAsSb/InP的MBE生长及特性[J]. 发光学报, 2009,30(5):630-633.

LI Zhan-guo, LIU Guo-jun, YOU Ming-hui, et al. Growth and Characterization of InGaAsSb on InP Substrate by Molecular Beam Epitaxy[J]. Chinese Journal of Luminescence, 2009,30(5):630-633.
李占国, 刘国军, 尤明慧, 等. InGaAsSb/InP的MBE生长及特性[J]. 发光学报, 2009,30(5):630-633. DOI：

LI Zhan-guo, LIU Guo-jun, YOU Ming-hui, et al. Growth and Characterization of InGaAsSb on InP Substrate by Molecular Beam Epitaxy[J]. Chinese Journal of Luminescence, 2009,30(5):630-633. DOI：

摘要

研究了InP基InGaAsSb外延材料受生长温度和Ⅴ/Ⅲ比的影响。实验中利用高能电子衍射(RHHEED)监测获得了合适的生长温度和Ⅴ/Ⅲ比

采用扫描电子显微镜 (SEM)、X射线光电子能谱(XPS)、X射线双晶衍射(XRDCD)和光致发光(PL)谱等方法研究了InGaAsSb薄膜材料的表面形貌、结晶质量和发光特性。通过控制生长温度和Ⅴ/Ⅲ比

获得了X射线衍射峰半峰全宽较窄的高质量的外延材料。

Abstract

In this work

the InGaAsSb epilayers were grown on InP substrate

the reflection high-energy electron diffraction(RHEED) was used for in-situ monitoring InGaAsSb surface morphology. We systematically studied the effect of the growth temperature and Ⅴ/Ⅲ ratio on a serious of heteroepitaxial quality InGaAsSb films.Optimized the growth-temperature

the epilayers were performed at maintaining binary growth in the cases of 350 ℃

and the folllowing higher quality film appears at 400 ℃.The epitaxial thin films characterization were presented and analyzed

such as surface morphology

interface inspection

crystalline quality and photoluminecence characteristic by scanning electron microscopy (SEM)

X-ray photoelectron spectrum (XPS)

X-ray double-crystal diffraction (XRDCD) and photoluminecence (PL)

etc.

We also showed some questions about the growth temperature and Ⅴ/Ⅲ ratio. In conclusions

the high quality InGaAsSb epilayers with optimized growth temperature and Ⅴ/Ⅲ ratio were obtained

which exhibits a XRD peak with narrow full-width at half maximum (FWHM).

关键词

分子束外延锑化物表面形貌X射线双晶衍射

Keywords

MBEantimonidesurface morphologyXRDCD

references

. Song Fuying. Process and charater of InSb by MBE without GaAs buffer [J]. Infrared and Laser Technology (红外与激光技术), 1995, 24 (5):63-67 (in Chinese).

. Zhang Xiong, Li Aizhen, Zhang Yonggang, et al. Room temperature AlGaAsSb/InGaAsSb 2 μm ridge-waveguide multi-quantum-well lasers [J]. Chin. J. Rare Metals (稀有金属), 2004, 28 (3):574-576 (in Chinese).

. Tang Tian, Zhang Yonggang, Zheng Yanlan, et al. Strained AlGaAsSb/InGaAsSb materials grown by molecular beam epitaxy [J]. Chin. J. Rare Metals (稀有金属), 2004, 28 (3):530-532 (in Chinese).

. Kawamura Yuichi, Amano Masanobu, Ouchi Kazuhiro, et al. Molecular beam epitaxial growth and characterization of InGaAsSb quantum well structures on InP for lasers operating at 2 μm wavelength region [J]. Technical Report of IEICE, 2003, 103 (47):31-36.

. Lao Yanfeng, Wu Huizhen. Design of GaInAs/InGaAsP quantum wells for 1.44 μm semiconductor lasers [J]. Chin. J. Rare Metals (稀有金属), 2004, 28 (3):511-515 (in Chinese).

. Gao Shaowen, Chen Yiqiao, Li Aizhen. Calculation of band structure of GaxIn1-xAs/GaInAsP strained quantum wells [J]. J. Functional Materials and Devices (功能材料与器件学报), 2002, 8 (3):218-222 (in Chinese).

. Tang Tian, Zhang Yongang, Zheng Yanlan, et al. Photoluminecence characteristic of InGaAsSb multiple quantum-well materials [J]. J. Functional Materials and Devices (功能材料与器件学报), 2005, 11 (2):183-186 (in Chinese).

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