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1. 衡阳师范学院 物电系, 湖南 衡阳 421008
2. 南华大学 核科学技术学院,湖南 衡阳,421001
3. 湖南天雁机械有限公司,湖南 衡阳,421005
收稿日期:2009-01-25,
修回日期:1900-01-02,
网络出版日期:2009-10-30,
纸质出版日期:2009-10-30
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谭延亮, 游开明, 袁红志. 发光二极管负电容与复合发光关系[J]. 发光学报, 2009,30(5):644-648.
TAN Yan-liang, YOU Kai-ming, YUAN Hong-zhi. Relation of Negative Capacitance in LED to Emitting-recombination[J]. Chinese journal of luminescence, 2009, 30(5): 644-648.
利用正向交流(ac)小信号方法对发光二极管(LED)的电容-电压特性进行测量
可以观察到发光二极管中的负电容现象。通过对复合发光机理和发光二极管p-n结进行分析
得到了发光二极管在特定的正向电压范围内
由于发光概率复合急剧变化出现了<0的现象;当<0时
分析发光二极管结电容在正向偏压下对交流小信号的响应得到发光二极管表观电容的电流相位落后交流小信号电压相位
发光二极管表观电容表现为一个负电容。首次得到了发光二极管负电容与复合发光的关系表达式。
The measurements of forward current-voltage characteristic and forward capacitance-voltage characte-ristic are the most important methods to study the forward electricity characteristic of light-emitting diodes. Forward alternating current (ac) small signal method can be used to measure the capacitance-voltage characteristic of light-emitting diodes
and negative capacitance can be observed. By analyzing the responds of light-emitting diodes junction capacitance by the alternating current small signalmethod based on forward direct current
we found that the current phase of apparent capacitance is behind the phase of voltage when <0
leading to apparent capacitance being negative capacitance in measurement. Additionally
the expression of the negative capacitance in LED related with the recombination emitting is firstly obtained. By analyzing the responds of variable capacitance to the alternating current small signal
we also found that the variable capacitance for the specific parameter can make the phase of current be behind the phase of voltage
leading to the negative capacitance in measurement. The result of theory analysis tallies with the experiment. It was found the negative capa-citance is valuable for study the electrical characteristics of light-emitting diodes and valuable for the knowledge to improve the characteristic and parameter relevant the p-n junction internal structure of light-emitting diodes.
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. Feng Liefeng, Zhu Chuanyun, Chen Yong, et al. Mechanism of negative capacitance in LEDs [J]. J. Optoelectronics· Laser (光电子·激光), 2006, 17 (1):5-8 (in Chinese).
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. Chen Yong, Feng Liefeng, Zhu Chuanyun, et al. Mesurement and judgement on negative capacitance in leds [J]. J. Hebei University of Technology (河北工业大学学报), 2005, 34 (4):24-27 (in Chinese).
. Zeng Zhibin, Zhu Chuanyun, Li Le, et al. Study of negative capacitance effect of GaN blue LEDs [J]. J. Optoelectronics · Laser (光电子·激光), 2004, 15 (4):402-405 (in Chinese).
. Wang Jun, Feng Liefeng, Zhu Chuanyun, et al. The experimental study of negative capacitance in LEDs [J]. J. Optoelectronics ·Laser (光电子·激光), 2006, 17 (1):1-4 (in Chinese).
. Wu X, Ebans H L,Yang E S. Negative capacitance at metal-semiconductor interfaces [J]. J. Appl. Phys., 1990, 68 (6):2845-2848.
. Tan Yanliang, You Kaiming, Chen Leizun, et al. Analysis of the apparent capacitance extremum of GaN light-emitting diode [J]. Chin. J. Lumin.(发光学报), 2007, 28 (2):237-240 (in Chinese).
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