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研究了Sr
2-x
Ba
x
SiO
4
: Eu
2+
荧光材料作为白光LED发光体的可行性和应用特性。采用高温固相法制备了Sr
2-x
Ba
x
SiO
4
: Eu
2+
材料系列样品
对样品的成分配比、阴离子掺杂、合成温度和时间进行了系统实验
利用XRD、SEM、光谱测试及封装测试等手段对样品的组成、结构、形貌特征及应用性能进行了表征。研究表明Sr
2-x
Ba
x
SiO
4
: Eu
2+
荧光材料具有激发范围宽(300~500 nm)、发射范围宽(500~600 nm)的特点。通过控制碱土金属的比例可以精确控制材料的发射波长
在Ba掺杂范围0≤x
<
0.5内可以获得550~560 nm的发射
与YAG材料相比在光谱上增加了红色成分。通过引入恰当助熔成分进行阴离子掺杂
精确控制烧结工艺等手段极大提高了550~560 nm发射的发光强度和光转换效率。封装应用和测试证明
本研究优化制备的高性能Sr
2-x
Ba
x
SiO
4
∶ Eu
2+
荧光材料的光转换效率普遍可达到YAG材料的95%
在显色指数、色温和色纯度方面也优于或相当于YAG材料
并且具有较好的芯片适应性和较多的红色成分
是较为理想的应用于白光LED的荧光材料
特别适合于暖白光LED的制备。
. Nakamura S, Fasol G. The Blue Laser Diode [M]. Berlin: Springer-Verlag, 1997, 216.
. Xu Xurong, Su Mianzeng. Luminescence and Luminescent Materials [M]. Beijing: Chemical Industry Press, 2004, 322 (in Chinese).
. Park J K, Lim M A, Kim C H, et al. White light-emitting diodes of GaN-based Sr2SiO4 ∶ Eu and the luminescent properties [J]. Appl. Phys. Lett., 2003, 82 (5):683-685.
. Park J K, Kim C H, Park S H, et al. Application of strontium silicate yellow phosphor for white light-emitting diodes [J]. Appl. Phys. Lett., 2004, 84 (10):1647-1649.
. Poort S H M, Janssen W, Blasse G. Optical properties of Eu2+-activated orthosilicates and orthophosphates [J]. J. Alloys and Compounds, 1997, 260 (1-2):93-97.
. Park J K, Choi K J, Kim C H, et al. Optical properties of Eu2+-activated Sr2SiO4 phosphor for light emitting diodes [J]. Electrochem. Solid State Lett., 2004, 7 (5):H15-H17.
. Yang Yi, Jin Shaogzhong, Shen Changyu, et al. Spectral properties of alkaline earth composite silicate phosphor for white-LED [J]. Chin. J. Lumin. (发光学报), 2008, 29 (5):800-804 (in Chinese).
. Li Xuezheng, Wang Dajian, Gu Tiecheng, et al. Sol spray-microwave cancining and luminescence properties of Ba3MgSi2O8 hosted phosphors for white light emitting diodes [J]. Chin. J. Lumin. (发光学报), 2008, 29 (6):989-995 (in Chinese).
. Li Y Q, Van Steen J E J, Van Krevel J W H, et al. Luminescence properties of red-emitting M2Si5N8 : Eu2+ (M=Ca,Sr,Ba) LED conversion phosphors [J]. J. Alloys and Compounds, 2006, 417 (1-2):273-279.
. Li Y Q, de With G, Hintzen H T. Luminescence properties of Ce3+-activated alkaline earth silicon nitride M2Si5N8 : Eu2+ (M=Ca,Sr,Ba) materials [J]. J. Lumin., 2006, 116 (1-2):107-116.
. Li Y Q, de With G, Hintzen H T. Synthesis, structure and luminescence properties of Eu2+ and Ce3+ activated BaYSi4N7 [J]. J. Alloys and Compounds, 2004, 385 (1-2):1-11.
. Zhao Xiaoxia, Wang Xiaojun, Chen Baojiu, et al. Luminescent properties of Eu3+ doped α-Gd2(MoO4)3 phosphor for white light emitting diodes [J]. Optical Materials, 2007, 29 (12):1680-1684.
. Li Xu, Yang Yong, Yang Zhiping, et al. Fabrication and properties of Eu3+-doped La2Mo2O9 red phosphor [J]. Chin. J. Lumin. (发光学报), 2008, 29 (1):93-96 (in Chinese).
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