激光辐照和高温氧化硅锗合金的低维结构和发光特性

吴克跃; 宋 军; 吴兴举

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激光辐照和高温氧化硅锗合金的低维结构和发光特性

论文 | 更新时间：2020-08-12

- 激光辐照和高温氧化硅锗合金的低维结构和发光特性
- The Low-dimensional Structure and Luminescence of Nano SiGe Alloy Formed by Laser Irradiation and High Temperature Oxidation
- 发光学报 2009年30卷第4期页码：541-544
- 作者机构：
  
  皖西学院数理系,安徽六安,237012
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O472.3;O482.31
- 收稿日期：2008-08-25，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-08-30，
  
  纸质出版日期：2009-08-30
- 稿件说明：
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吴克跃, 宋军, 吴兴举. 激光辐照和高温氧化硅锗合金的低维结构和发光特性[J]. 发光学报, 2009,30(4):541-544.

WU Ke-yue, SONG Jun, WU Xing-ju. The Low-dimensional Structure and Luminescence of Nano SiGe Alloy Formed by Laser Irradiation and High Temperature Oxidation[J]. Chinese journal of luminescence, 2009, 30(4): 541-544.
吴克跃, 宋军, 吴兴举. 激光辐照和高温氧化硅锗合金的低维结构和发光特性[J]. 发光学报, 2009,30(4):541-544. DOI：

WU Ke-yue, SONG Jun, WU Xing-ju. The Low-dimensional Structure and Luminescence of Nano SiGe Alloy Formed by Laser Irradiation and High Temperature Oxidation[J]. Chinese journal of luminescence, 2009, 30(4): 541-544. DOI：

摘要

采用强激光辐照硅锗合金

然后高温氧化的方法

在样品表面生成微米级小孔

用高精度扫描电镜观察孔内结构

发现片状纳米结构的存在。用荧光光谱仪测量其光致荧光谱

对于激光辐照(无高温氧化)的样品

在峰值705 nm处出现较强的光致发光(PL)。高温氧化后

样品在606 nm处出现一尖锐的PL光谱。利用量子受限和纳晶与氧化物的界面态综合模型解释PL光谱的产生。

Abstract

A kind of low-dimensional structure on SiGe alloy film can be formed by laser irradiation (75 W power and 1 064 nm wavelength) and high temperature oxidation

and the low-dimensional structure can emit intense photoluminescence (PL). A emission model of three-level system in the interface between SiO

and Ge crystal cluster is proposed for interpreting the PL peaks at 705 nm and 606 nm. The results in this article indicated that the band gap of Ge nanocrystals opens by quantum confinement. The emission energy increases with decreasing sizes

distributing the band PL spectra. A sharp PL emission takes place at 606 nm

which is independent of size. In this process

the photo-excitation occurs in germanium nanocrystal while the photo-emission occurs in oxide interface. It is demonstrated that population inversion between the top state of the valence band and the trap state in the nanocrystal-oxide interlayer is possible.

关键词

Keywords

references

. Cano T Del, Sanz L F, Martin P, et al. Porous SiGe nanostructures formed by electrochemical etching of thin poly-SiGe films [J]. J. Electrochem. Soc., 2004, 151 (5):C326-C332.

. Schoisswohl M, Rosenbauer M, Cantin J L, et al. Photoluminescence and Raman study of porous SiGe [J]. J. Appl. Phys., 1996, 79 (12):9301-9304.

. Guerrero-Lemus R, Ben-Hander F A, Kenanoglu A, et al. Lifetime measurements of porous Si1-xGex stain etched [J]. Thin Solid Films, 2004, 451-452 :316-319.

. Huang Weiqi, Liu Shirong. Optical constants of Ge nanolayers in oxidation of SiGe alloys determined by ellipsometry [J]. Acta. Phys. Sinica (物理学报), 2005, 54 (2):972-876 (in Chinese).

. Huang Weiqi, Cai Shaohong. Kinetics and mechanism of nanostructures in oxidation of Si1-xGex alloys [J]. Chin. Phys., 2002, 19 (11):1657-1659.

. Wu Keyue, Huang Weiqi, Li Xu. Preparation of porous SiGe and emission enhancement in near-infrared area [J]. Chin. J. Lumin.(发光学报), 2007, 28 (4):585-588 (in Chinese).

. Huang Weiqi, Li Xu, Wu Keyue, et al. Enhancement of photoluminescence emission in low-dimensional structures formed by irradiation of laser [J]. J. Appl. Phys., 2007, 102 (5):053517-1-5.

. Huang Weiqi, Liu Shirong, Li Xu, et al. Low-dimensional structures formed by irradiation of laser [J]. Chin. Phys., 2007, 16 (3):725-729.

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