压力下GaN/Ga<SUB>1-x</SUB>Al<SUB>x</SUB>N量子点中杂质态的界面效应

张 敏; 闫祖威

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压力下GaN/Ga_1-xAl_xN量子点中杂质态的界面效应

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- 压力下GaN/Ga_1-xAl_xN量子点中杂质态的界面效应
- Interface Effect on the Impurity State in a GaN/Ga_1-xAl_xN Quantum Dot under Pressure
- 发光学报 2009年30卷第4期页码：529-534
- 作者机构：
  
  1. 内蒙古大学物理科学与技术学院
  2. 内蒙古师范大学物理与电子信息学院
  3. 内蒙古农业大学理学院
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O471.3
- 收稿：2008-11-13，
  
  修回：1900-1-2，
  
  网络首发：2009-08-30，
  
  纸质出版：2009-08-30
- 稿件说明：
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张敏, 闫祖威. 压力下GaN/Ga_1-xAl_xN量子点中杂质态的界面效应[J]. 发光学报, 2009,30(4):529-534.

ZHANG Min, YAN Zu-wei. Interface Effect on the Impurity State in a GaN/Ga_1-xAl_xN Quantum Dot under Pressure[J]. Chinese Journal of Luminescence, 2009, 30(4): 529-534.
张敏, 闫祖威. 压力下GaN/Ga_1-xAl_xN量子点中杂质态的界面效应[J]. 发光学报, 2009,30(4):529-534. DOI：

ZHANG Min, YAN Zu-wei. Interface Effect on the Impurity State in a GaN/Ga_1-xAl_xN Quantum Dot under Pressure[J]. Chinese Journal of Luminescence, 2009, 30(4): 529-534. DOI：

摘要

考虑界面处导带弯曲

流体静压力以及有效质量随量子点位置的依赖性

采用变分法以及简化相干势近似

研究了无限高势垒GaN/Ga

1-x

N球形量子点中杂质态的界面效应

计算了杂质态结合能随量子点尺寸、电子面密度以及压力的变化关系。结果表明

结合能随压力的增大呈线性增加的趋势

有效质量位置的依赖性以及导带弯曲对结合能有不容忽视的影响。

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压力下GaN/Ga1-xAlxN量子点中杂质态的界面效应

Interface Effect on the Impurity State in a GaN/Ga1-xAlxN Quantum Dot under Pressure

DOI：

摘要

Abstract

关键词

Keywords

references

压力下GaN/Ga_1-xAl_xN量子点中杂质态的界面效应

Interface Effect on the Impurity State in a GaN/Ga_1-xAl_xN Quantum Dot under Pressure