压力下GaN/Ga<SUB>1-x</SUB>Al<SUB>x</SUB>N量子点中杂质态的界面效应

张 敏; 闫祖威

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压力下GaN/Ga_1-xAl_xN量子点中杂质态的界面效应

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- 压力下GaN/Ga_1-xAl_xN量子点中杂质态的界面效应
- Interface Effect on the Impurity State in a GaN/Ga_1-xAl_xN Quantum Dot under Pressure
- 发光学报 2009年30卷第4期页码：529-534
- 作者机构：
  
  1. 内蒙古大学物理科学与技术学院,内蒙古呼和浩特,010021
  2. 内蒙古师范大学物理与电子信息学院,内蒙古呼和浩特,010022
  3. 内蒙古农业大学理学院,内蒙古呼和浩特,010018
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O471.3
- 纸质出版日期：2009-8-30，
  
  网络出版日期：2009-8-30，
  
  收稿日期：2008-11-13，
  
  修回日期：1900-1-2，
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张敏, 闫祖威. 压力下GaN/Ga_1-xAl_xN量子点中杂质态的界面效应[J]. 发光学报, 2009,30(4):529-534.

ZHANG Min, YAN Zu-wei. Interface Effect on the Impurity State in a GaN/Ga_1-xAl_xN Quantum Dot under Pressure[J]. Chinese Journal of Luminescence, 2009,30(4):529-534.
张敏, 闫祖威. 压力下GaN/Ga_1-xAl_xN量子点中杂质态的界面效应[J]. 发光学报, 2009,30(4):529-534. DOI：

ZHANG Min, YAN Zu-wei. Interface Effect on the Impurity State in a GaN/Ga_1-xAl_xN Quantum Dot under Pressure[J]. Chinese Journal of Luminescence, 2009,30(4):529-534. DOI：

摘要

考虑界面处导带弯曲

流体静压力以及有效质量随量子点位置的依赖性

采用变分法以及简化相干势近似

研究了无限高势垒GaN/Ga

1-x

N球形量子点中杂质态的界面效应

计算了杂质态结合能随量子点尺寸、电子面密度以及压力的变化关系。结果表明

结合能随压力的增大呈线性增加的趋势

有效质量位置的依赖性以及导带弯曲对结合能有不容忽视的影响。

Abstract

Semiconductor structures with quantum confinement have shown interesting behavior. In recent years

the physical properties of quantum heterostructures composed of the group-III nitrides semiconductors with wide-band-gaps

such as AlN

GaN and InN

as well as their ternary compounds

have been widely stu-died arising from their promising application in short-wavelength electroluminescence devices.The high pressure

high electric-field

intense magnetic-field become the powerful tools to explore the property of material. Some authors investigated the effects of electric field and hydrostatic pressure on donor binding energies in a GaAs quantum dot. Some authors calculated the ground-state binding energies for a hydrogenic impurity in a spherical quantum dot within a uniform magnetic field. How ever

However

few studies focused interface effect and hydrostatic pressure on zinc-blende nitride quantum dots. As the periodicity of the host semiconductor is lost

or when the impurity potential varies too rapidly over an effective Bohr radius the effective mass approximation is not reliable.In the present work

a modified variational method within the simplified coherent potential approximate was adopted to investigate the impurity state binding energies of GaN/Ga

1-x

/em

xN infinite barrier spherical shape quantum dot by using a triangular potential to approximate the interface potential. Considering the hydrostatic pressure and a position dependent mass

the relations among the impurity binding energies

the hydrostatic pressure

quantum dot radius and the electron areal density were calculated. The result indicated that the binding energies of impurity state nearly linearly increase with pressure. It also showed that the influence of conductive band bending and the position dependent effective mass should not be neglected. As the quantum dot radius is smaller

the binding energies are not affected by conductive band bending. With the increasing of the quantum dot size

the binding energies increase gradually with it. For a given hydrostatic pressure and Al component

the electron areal density n

strengthens the band bending of the interface to increase the binding energy.

关键词

量子点结合能电子面密度压力

Keywords

quantum dotbinding energyelectron areal densitypressure

references

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压力下GaN/Ga1-xAlxN量子点中杂质态的界面效应

Interface Effect on the Impurity State in a GaN/Ga1-xAlxN Quantum Dot under Pressure

DOI：

摘要

Abstract

关键词

Keywords

references

压力下GaN/Ga_1-xAl_xN量子点中杂质态的界面效应

Interface Effect on the Impurity State in a GaN/Ga_1-xAl_xN Quantum Dot under Pressure