晶格失配对InAsxP1-x/InP发光特性的影响

阎大伟; 宋 航; 缪国庆; 于淑珍; 蒋 红; 李志明; 刘 霞; 曹连振; 郭万国; 孙晓娟

doi:null

您当前的位置：

首页 >

文章列表页 >

晶格失配对InAs_xP_1-x/InP发光特性的影响

论文 | 更新时间：2020-08-12

- 晶格失配对InAs_xP_1-x/InP发光特性的影响
- Lattice Mismatch Effect on Photoluminescence from InAs_xP_1-x/InP Heterostructuer
- 发光学报 2009年30卷第3期页码：309-313
- 作者机构：
  
  1. 中国科学院研究生院北京,100049
  2. 中国科学院激发态物理重点实验室, 中国科学院长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O482.31
- 收稿日期：2008-08-25，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-06-30，
  
  纸质出版日期：2009-06-30
- 稿件说明：
移动端阅览
阎大伟, 宋航, 缪国庆, 等. 晶格失配对InAs_xP_1-x/InP发光特性的影响[J]. 发光学报, 2009,30(3):309-313.

YAN Da-wei, SONG Hang, MAO Guo-qing, et al. Lattice Mismatch Effect on Photoluminescence from InAs_xP_1-x/InP Heterostructuer[J]. Chinese journal of luminescence, 2009, 30(3): 309-313.
阎大伟, 宋航, 缪国庆, 等. 晶格失配对InAs_xP_1-x/InP发光特性的影响[J]. 发光学报, 2009,30(3):309-313. DOI：

YAN Da-wei, SONG Hang, MAO Guo-qing, et al. Lattice Mismatch Effect on Photoluminescence from InAs_xP_1-x/InP Heterostructuer[J]. Chinese journal of luminescence, 2009, 30(3): 309-313. DOI：

摘要

采用低压金属有机化学气相沉积(LP-MOCVD)技术

在掺Fe的半绝缘InP衬底上制备了InAs

0.157

0.843

外延层。利用变温光致发光研究了InAs

0.157

0.843

外延层在13~300 K温度范围内的发光特性

通过理论分析与计算

证实了在应力作用下InAs

0.157

0.843

外延层价带顶的轻重空穴带发生了劈裂

并研究了导带底与价带顶轻空穴带之间形成的复合发光峰在应力作用下随温度的变化规律。

Abstract

The variable-temperature photoluminescence spectra of strained InAs

1-x

/InP heterostructuer were experimentally determined in the temperature range 13~300 K. A theoretical calculation was presented that takes into account the temperature-induced variations in band gap and biaxial strain to explain the PL spectra. The results showed that strain which is induced by lattice mismatch between epitaxial layer and substrate removes the degeneracy between the light- and heavy-hole states at the top of the valence band

and with temperature under 100 K

the recombinations from the conduction band to the split valence bands are both observed in the photoluminescence spectra. As temperature is raised

it results in an increasingly larger light-hole population than that of heavy-hole due to thermalization

so when temperature is beyond 100 K only the recombination from the conduction band to the light-hole state can be observed.We also find that the energy of the recombination between the conduction band and the light-hole and heavy-hole state changes as a function of temperature.

关键词

Keywords

references

. Yamamoto Mitsuo, Yamamoto Nori, Nakano Junichi. MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low-threshold 1.3-μm lasers [J]. IEEE J Quantum Electron, 1994, 30 (2):554-561.

. Mei X B, Loi K K, Wieder H H, et al. Strain-compensated InAsP/GaInP multiple quantum wells for 1.3 μm waveguide modulators [J]. Appl. Phys. Lett., 1996, 68 (1):90-92.

. Zhao Y G, Masut R A, Brebner J L, et al. Temperature dependence of photoluminescence in InAsP/InP strained multiple quantum wells [J]. J. Appl. Phys., 1994, 76 (10):5921-5926.

. Lee Chong-Yi, Wu Meng-Chyi, Shiao Hung-Pin, et al.Temperature dependence of photoluminescence from InAsP/InP strained quantum well structures grown by metalorganic chemical vapor deposition [J]. J. Crystal Growth., 2000, 208 (1-4):137-144.

. Olego D J, Okuno Y, Kawano T, et al. Structural and optoelectronic properties and their relationship with strain relaxation in heteroepitaxial InP layers grown on GaAs substrates[J]. J. Appl. Phys.,1992, 71 (9):4492-4501.

. Asai H, Oe K. Energy band-gap shift with elastic strain in GaxIn1-xP epitaxial layers on (001) GaAs substrates [J]. J. Appl. Phys., 1983, 54 (4):2052-2056.

. Jordan A S. Some thermal and mechanical properties of InP essential to crystal growth modeling [J]. J. Cryst. Growth, 1985, 71 (3):559-565.

. Casey H C, Jr, Parrish M B. Heterostructure Lasers [M]. New York: Academic, 1978, Part B, p.9.

. Orlova N S. Anharmonic effects in semiconductors with sphalerite structure from data of pressure and temperature depen-dences of elastic constants [J]. Cryst. Res. Technol., 1989, 24 (3):K39- K41.

. Matthews J W. Enifaxial Growth B [M]. New York: Academic, 1975, p.A560.

. Hull R, Bean J C. Strained Layer Superlattices: Materials Science and Technology, Semiconductors and Semimetals, Vol. 33 [M]. edited by T.Pearsall. San Diego: Academic, 1991, p.1 and references therein.

. Stolz W, Guimaraes F E, Ploog K. Optical and structural properties of GaAs grown on (100) Si by molecular-beam epitaxy [J]. J. Appl. Phys., 1988, 63 (2):492-499.

. Nolte D D, Wahrkiewicz W, Haller E E. Band-edge hydrostatic deformation potentials in III-V semiconductors [J]. Phys. Rev. Lett., 1987, 59 (4):501-504.

. Hou H Q, Tu C W. Optical and structural characterization of InAsP/InGaP strain compensated multiple quantum wells grown by GSMBE [J]. J. Appl. Phys., 1994, 75 (9):4673-4679.

. Landolt-Boernstein: Numerical Data and Functional Relationship in Science and Technology [M]. New series, edited by O. Madelung, Berlin: Springer, 1982, 17.

. Olego D J, Okuno Y, Kawano T. Structural and optoelectronic properties and their relationship with strain relaxation in heteroepitaxial InP layers grown on GaAs substrates [J]. J. Appl. Phys., 1992, 71 (9):4492-4501.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

无机可再生应力发光材料研究进展

GaSb基PECVD法制备SiO₂薄膜的应力研究

非故意掺杂GaN层厚度对蓝光LED波长均匀性的影响

梯度铝镓氮缓冲层对氮化镓外延层性质的影响

硅衬底GaN基LED薄膜芯片的应力调制